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Mostrati risultati da 1 a 20 di 24
Titolo Data di pubblicazione Autore(i) Rivista Serie Titolo libro
An Insight into effects Induced by Heavy-Ion Strikes in SCR ESD Protection Structures 2011 GRIFFONI, ALESSIOTAZZOLI, AUGUSTOPACCAGNELLA, ALESSANDROMENEGHESSO, GAUDENZIO + - - IEW2011, 2011 International Electrostatic Discharge Workshop
ESD and Ionizing Radiation Effects on Ultrathin Body SOI and Multiple Gate Technologies 2010 Griffoni, Alessio - - -
Electrical-Based ESD Characterization of Ultrathin-Body SOI MOSFETs 2010 GRIFFONI, ALESSIOMENEGHESSO, GAUDENZIO + IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY - -
Impact of radiation on the operation and reliability of deep submicron CMOS 2010 GRIFFONI, ALESSIOCESTER, ANDREAMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO + - - -
Impact of radiation on the operation and reliability of deep submicron CMOS 2010 GRIFFONI, ALESSIOCESTER, ANDREAGERARDIN, SIMONEMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO + ECS TRANSACTIONS - -
Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs 2010 GRIFFONI, ALESSIOGERARDIN, SIMONEMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
An Insight into the Parasitic Capacitances of SOI and Bulk FinFET Devices 2009 GRIFFONI, ALESSIOMENEGHESSO, GAUDENZIO + - - -
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 2009 GRIFFONI, ALESSIOSILVESTRI, MARCOGERARDIN, SIMONEMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
ESD Constraints of Bulk FinFET in Comparison with SOI FinFET Structures 2009 GRIFFONI, ALESSIOMENEGHESSO, GAUDENZIO + - - -
Angular and strain dependence of heavy-ions induced degradation in SOI FinFETs2009 European Conference on Radiation and Its Effects on Components and Systems 2009 GRIFFONI, ALESSIOGERARDIN, SIMONEMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO + - - Proceedings of 2009 European Conference on Radiation and Its Effects on Components and Systems, RADECS 2009
On-Wafer Human Metal Model Measurements for System-Level ESD Analysis on Component Level 2009 GRIFFONI, ALESSIOMENEGHESSO, GAUDENZIO + - - -
Next Generation FinFET Devices in Bulk Silicon Technology and Their Benefits for ESD Robustness 2009 GRIFFONI, ALESSIOMENEGHESSO, GAUDENZIO + - - -
A Statistical Approach to Microdose Induced Degradation in FinFET Devices 2009 GRIFFONI, ALESSIOGERARDIN, SIMONEMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 2008 GRIFFONI, ALESSIOSILVESTRI, MARCOGERARDIN, SIMONEMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO + - - Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS 2008
Ionizing Radiation Effects on Advanced CMOS Devices and on ESD Protection Structures for CMOS Technology 2008 GRIFFONI, ALESSIOMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO - - -
ESD Sensitivity of 65nm Fully Depleted SOI MOSFETs with Different Strain-Inducing Techniques 2008 GRIFFONI, ALESSIOTAZZOLI, AUGUSTOGERARDIN, SIMONEMENEGHESSO, GAUDENZIO + - - 2nd International Electrostatic Discharge Workshop IEW 2008
Electrostatic Discharge Effects In Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques 2008 GRIFFONI, ALESSIOTAZZOLI, AUGUSTOGERARDIN, SIMONEMENEGHESSO, GAUDENZIO + - - ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS - 2008
Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs 2008 GRIFFONI, ALESSIOGERARDIN, SIMONEMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Multi-gate devices for the 32-nm node and beyond: advantages and issues 2008 GRIFFONI, ALESSIOPACCAGNELLA, ALESSANDROMENEGHESSO, GAUDENZIO + - - -
Microdose and Breakdown Effects Induced by Heavy Ions on sub 20-nm Triple-Gate SOI FETs 2008 GRIFFONI, ALESSIOMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO + - - -
Mostrati risultati da 1 a 20 di 24
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