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Mostrati risultati da 1 a 20 di 63
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal 2018 Rossetto, I.Meneghini, M.De Santi, C.PANDEY, SUDIPMeneghesso, G.Zanoni, E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Reliability of GaN-Based Power Devices 2018 G. MeneghessoE. ZanoniM. MeneghiniM. RuzzarinI. Rossetto - - Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
Role of deep levels and time-dependent breakdown effects in determining performances and reliability of power GaN devices 2017 Enrico ZanoniAlessandro BarbatoDavide BisiCarlo De SantiIsabella RossettoMaria RuzzarinNicola TrivellinAlessandro ChiniGaudenzio MeneghessoMatteo Meneghini - - Proceedings of the 9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2017)
Dielectric related issues in GaN based MIS HEMTs 2017 G. MeneghessoD. BisiI RossettoM. RuzzarinC. De SantiMENEGHINI, MATTEOE. Zanoni - - Proceedings of the 44th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-44)
Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs 2017 Rossetto, I.Meneghini, M.Tajalli, A.Dalcanale, S.De Santi, C.Zanoni, E.Meneghesso, G. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes under HTRB Tests 2017 ROSSETTO, ISABELLAMENEGHINI, MATTEO + IEEE ELECTRON DEVICE LETTERS - -
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level 2017 Rossetto, I.Meneghini, M.Canato, E.Barbato, M.Stoffels, S.Meneghesso, G.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs 2017 Tajalli, AlalehMeneghini, MatteoRossetto, IsabellaZanoni, EnricoMeneghesso, Gaudenzio + MICROELECTRONICS RELIABILITY - -
Field-related failure of GaN-on-Si HEMTs: Dependence on device geometry and passivation 2017 ROSSETTO, ISABELLAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
GaN HEMTs with p-GaN gate: Field-And time-dependent degradation 2017 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOROSSETTO, ISABELLACANATO, ELEONORADE SANTI, CARLOTRIVELLIN, NICOLAZANONI, ENRICO + PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING - Proceedings of SPIE - The International Society for Optical Engineering
Reliability and failure analysis in power GaN-HEMTs: An overview 2017 Meneghini, MatteoRossetto, IsabellaDe Santi, CarloRampazzo, FabianaTajalli, AlalehBarbato, AlessandroRuzzarin, MariaBorga, MatteoCanato, EleonoraZanoni, EnricoMeneghesso, Gaudenzio IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 2017 Meneghini, MatteoRossetto, IsabellaBorga, MatteoCanato, EleonoraDe Santi, CarloRampazzo, FabianaMeneghesso, GaudenzioZanoni, EnricoStoffels, Steve + IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs 2017 Borga, MatteoMeneghini, MatteoRossetto, IsabellaStoffels, SteveMeneghesso, GaudenzioZanoni, Enrico + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Gaining Insight into Performance- and Reliability-Limiting Phenomena in GaN-Based Heterostructure Field-Effect Transistors by Means of Combined Experimental/Simulation Analysis 2017 Carlo DE SANTIGaudenzio MENEGHESSOMatteo MENEGHINIIsabella ROSSETTOEnrico ZANONI + - - Proceedings of the 9th International Conference on Materials for Advanced Technologies (ICMAT2017)
Buffer-induced vertical leakage and charge trapping in normally-off GaN-on-Si HEMTs 2017 M. BorgaM. MeneghiniI. RossettoM. SilvestriG. MeneghessoE. Zanoni + - - Proceedings of the 41th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits 2017
Study of trapping in GaN-based power HEMTs based on High-Voltage Double-Pulsed Backgating Measurement System 2017 Maria RuzzarinAlessandro BarbatoMatteo MeneghiniIsabella RossettoGaudenzio MeneghessoEnrico Zanoni + - - Proceedings of the 41th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits 2017
Secondary electroluminescence of GaN-on-Si RF HEMTs: Demonstration and physical origin 2017 MENEGHINI, MATTEOBARBATO, ALESSANDROROSSETTO, ISABELLAFAVARON, ANDREAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Reliability physics of GaN HEMTs for power switching applications: role of the gate structure 2017 Enrico ZanoniAlessandro BarbatoDavide BisiCarlo De SantiFabiana RampazzoIsabella RossettoMaria RuzzarinNicola TrivellinGaudenzio MeneghessoMatteo Meneghini + - - Proceedings of the 12th International Conference on Nitride Semiconductors (ICNS-12)
Coupled experimental/simulation analysis as a tool for probing trap-related and high-electric-field phenomena in GaN HEMTs 2017 C. De SantiG. MeneghessoM. MeneghiniI. RossettoE. Zanoni + - - Proceedings of the 2017 International Integrated Reliability Workshop (IIRW 2017)
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift 2017 Dalcanale, StefanoMeneghini, MatteoTajalli, AlalehRossetto, IsabellaRuzzarin, MariaZanoni, EnricoMeneghesso, Gaudenzio + IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Mostrati risultati da 1 a 20 di 63
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