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Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Power GaN HEMT degradation: From time-dependent breakdown to hot-electron effects 2019 Meneghini, M.Barbato, A.Borga, M.De Santi, C.Barbato, M.Stoffels, S.Meneghesso, G.Zanoni, E. + - TECHNICAL DIGEST - INTERNATIONAL ELECTRON DEVICES MEETING Technical Digest - International Electron Devices Meeting, IEDM
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability 2019 Stoffels S.SANGIORGI, ENRICOBorga M.Fabris E.Meneghini M.Zanoni E.Meneghesso G. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs 2018 Borga, M.Meneghini, M.Stoffels, S.Zanoni, E.Meneghesso, G. + MICROELECTRONICS RELIABILITY - -
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process 2018 Stoffels, S.Borga, M.Zanoni, E.Meneghesso, G.Meneghini, M. + MRS COMMUNICATIONS - -
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level 2017 Rossetto, I.Meneghini, M.Canato, E.Barbato, M.Stoffels, S.Meneghesso, G.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 2017 Meneghini, MatteoRossetto, IsabellaBorga, MatteoCanato, EleonoraDe Santi, CarloRampazzo, FabianaMeneghesso, GaudenzioZanoni, EnricoStoffels, Steve + IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs 2017 Borga, MatteoMeneghini, MatteoRossetto, IsabellaStoffels, SteveMeneghesso, GaudenzioZanoni, Enrico + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Mostrati risultati da 1 a 7 di 7
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