Sfoglia per Autore
V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis
2024 Nicoletto, Marco; Caria, Alessandro; Rampazzo, Fabiana; De Santi, Carlo; Buffolo, Matteo; Rossi, Francesca; Huang, Xuanqui; Fu, Houqiang; Chen, Hong; Zhao, Yuji; Gasparotto, Andrea; Becht, Conny; Schwarz, Ulrich T.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability
2023 Zanoni, Enrico; Santi, Carlo De; Gao, Zhan; Buffolo, Matteo; Fornasier, Mirko; Saro, Marco; Pieri, Francesco De; Rampazzo, Fabiana; Meneghesso, Gaudenzio; Meneghini, Matteo; Zagni, Nicolò; Chini, Alessandro; Verzellesi, Giovanni
Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells
2023 Nicoletto, M; Caria, A; Rampazzo, F; De Santi, C; Buffolo, M; Mura, G; Rossi, F; Huang, Xq; Fu, Hq; Chen, H; Zhao, Yj; Meneghesso, G; Zanoni, E; Meneghini, M
Novel models for the analysis of the dynamic performance of wide bandgap devices
2023 DE SANTI, Carlo; Fregolent, Manuel; Modolo, Nicola; Buffolo, Matteo; Rampazzo, Fabiana; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Thermally-activated failure mechanisms of 0.25 μm RF AlGaN/GaN HEMTs submitted to long-term life tests
2023 Gao, Z; Chiocchetta, F; Rampazzo, F; De Santi, C; Fornasier, M; Meneghesso, G; Meneghini, M; Zanoni, E
Analysis of trapping and detrapping mechanisms in 0.15 μm-gate AlGaN/GaN High Electron Mobility Transistors: explanation of dynamic behaviour of threshold voltage and on-resistance
2023 DE PIERI, Francesco; Fornasier, Mirko; Gao, Zhan; Rampazzo, Fabiana; DE SANTI, Carlo; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico
Transconductance overshoot as a signature of trapping effects at backbarrier interface of GaN HEMTs : dependence on device epitaxial structure
2023 Gao, Zhan; Fornasier, Mirko; DE PIERI, Francesco; DE SANTI, Carlo; Rampazzo, Fabiana; Meneghini, Matteo; Meneghesso, Gaudenzio; Zanoni, Enrico
Impact of high-temperature operating lifetime tests on the stability of 0.15 μm AlGaN/GaN HEMTs: a temperature-dependent analysis
2023 Pilati, M.; Buffolo, M.; Rampazzo, F.; Lambert, B.; Sommer, D.; Grünenpütt, J.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs
2023 Gao, Z.; Rampazzo, F; De Santi, C; Fornasier, M; Meneghesso, G; Meneghini, M; Blanck, H; Grunenputt, J; Sommer, D; Chen, Dy; Wen, Kh; Chen, Jt; Zanoni, E
Novel approach of combined planar and cross-sectional defect analysis of stressed normally-on HEMT devices with leaky Schottky gates
2023 Graff, A.; Simon-Najasek, M.; Hübner, S.; Lejoyeux, M.; Altmann, F.; Gao, Zhan; Rampazzo, F.; Meneghini, M.; Zanoni, E.; Lambert, B.
Dynamic Behavior of Threshold Voltage and ID–VDS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect
2023 Gao, Zhan; De Santi, Carlo; Rampazzo, Fabiana; Saro, Marco; Fornasier, Mirko; Meneghesso, Gaudenzio; Meneghini, Matteo; Chini, Alessandro; Verzellesi, Giovanni; Zanoni, Enrico
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier
2022 Gao, Z.; Chiocchetta, F.; De Santi, C.; Modolo, N.; Rampazzo, F.; Meneghini, M.; Meneghesso, G.; Zanoni, E.; Blanck, H.; Stieglauer, H.; Sommer, D.; Benoit, L.; Grunenputt, J.; Kordina, O.; Chen, J. -T.; Jacquet, J. -C.; Lacam, C.; Piotrowicz, S.
Dynamic performance of wide bandgap devices
2022 De Santi, C.; Fregolent, M.; Modolo, N.; Nardo, A.; Buffolo, M.; Rampazzo, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse
2022 Chiocchetta, F.; De Santi, C.; Rampazzo, F.; Mukherjee, K.; Grunenputt, J.; Sommer, D.; Blanck, H.; Lambert, B.; Gerosa, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Study of the influence of gate etching and passivation on current dispersion, trapping and reliability in RF 0.15 mu m AlGaN/GaN HEMTs
2022 Chiocchetta, F; De Santi, C; Rampazzo, F; Mukherjee, K; Grunenputt, J; Sommer, D; Blanck, H; Lambert, B; Gerosa, A; Meneghesso, G; Zanoni, E; Meneghini, M
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications
2022 Gao, Z.; Chiocchetta, F.; Fornasier, M.; Saro, M.; Stramare, E.; Tonello, A.; Sharma, C.; Modolo, N.; De Santi, C.; Rampazzo, F.; Meneghesso, G.; Meneghini, M.; Zanoni, E.; Jacquet, J-C.; Lacam, C.; Piotrowicz, S.; Oualli, M.; Michel, N.; Aroulanda, S.
Hot-electron trapping and electric field redistribution in 0.15 µm RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier
2022 Chiocchetta, F.; Gao, Z.; Fornasier, M.; Modolo, N.; De Santi, C.; Rampazzo, F.; Meneghini, M.; Meneghesso, G.; Zanoni, E.
Failure Physics and Reliability of GaN-Based HEMTs for Microwave and Millimeter-Wave Applications: A Review of Consolidated Data and Recent Results
2022 Zanoni, E; Rampazzo, F; De Santi, C; Gao, Z; Sharma, C; Modolo, N; Verzellesi, G; Chini, A; Meneghesso, G; Meneghini, M
Role of Carbon in dynamic effects and reliability of 0.15 um AlGaN/GaN HEMTs for RF power amplifiers
2022 De Santi, C; Zanoni, E; Meneghini, M; Meneghesso, G; Rampazzo, F; Gao, Z; Sharma, C; Chiocchetta, F; Verzellesi, G; Chini, A; Cioni, M; Zagni, N; Lanzieri, C; Pantellini, A; Peroni, M; Latessa, L
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
2022 Favero, D.; De Santi, C.; Mukherjee, K.; Borga, M.; Geens, K.; Chatterjee, U.; Bakeroot, B.; Decoutere, S.; Rampazzo, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
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