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Mostrati risultati da 1 a 20 di 27
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
An investigation of defects and reliability issues on Gallium Nitride devices 2012 Ronchi, Nicolò - - -
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 2012 MENEGHINI, MATTEOSTOCCO, ANTONIOSILVESTRI, RICCARDORONCHI, NICOLO'MENEGHESSO, GAUDENZIOZANONI, ENRICO - - IEEE IRPS2012, International Reliability Physics Symposium
Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors 2011 ZANONI, ENRICOMENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIORAMPAZZO, FABIANASILVESTRI, RICCARDOROSSETTO, ISABELLARONCHI, NICOLO' - - Gallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting; Boston, MA; United States; 9 October 2011 through 14 October 2011; Code 88574
Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: a complete model 2011 MENEGHINI, MATTEOSTOCCO, ANTONIOBERTIN, MARCORONCHI, NICOLO'MENEGHESSO, GAUDENZIOZANONI, ENRICO + - - IEEE International Electron Device Meeting (IEDM 2011)
Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method 2011 MENEGHINI, MATTEORONCHI, NICOLO'STOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Combined electro-optical analysis of trapping effects in AlGaN/GaN HEMTs 2011 MENEGHINI, MATTEORONCHI, NICOLO'STOCCO, ANTONIORAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Proc. Of the 38th International Symposium on Compound Semiconductors – ISCS 2011
Latest reliability results in GaN HEMTs devices 2011 MENEGHESSO, GAUDENZIOSTOCCO, ANTONIORONCHI, NICOLO'MENEGHINI, MATTEOZANONI, ENRICO - - The Workshop on Compound Semiconductor Materials and Devices
Electrical and reliability investigation of AlGaN/GaN HEMTs grown on 8° off-axis 4H-SiC 2011 STOCCO, ANTONIORONCHI, NICOLO'MENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 35th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2011
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 2011 RAMPAZZO, FABIANASTOCCO, ANTONIOSILVESTRI, RICCARDOMENEGHINI, MATTEORONCHI, NICOLO'BISI, DAVIDEMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 20th European Heterostructure Technology meeting (HeTech 2011)
Reliability issues of Gallium Nitride High Electron Mobility Transistors 2010 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOTAZZOLI, AUGUSTORONCHI, NICOLO'STOCCO, ANTONIOZANONI, ENRICO + INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES - -
High Robustness GaN HEMT Subject to Reverse Bias Stress 2010 STOCCO, ANTONIORONCHI, NICOLO'MENEGHESSO, GAUDENZIOZANONI, ENRICO + - - WOCSDICE 2010 34rd Workshop on Compound Semiconductor Devices and Integrated Circuits,
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors 2010 MENEGHINI, MATTEOSTOCCO, ANTONIORONCHI, NICOLO'MENEGHESSO, GAUDENZIOZANONI, ENRICO + APPLIED PHYSICS LETTERS - -
New reliability understanding on GaN-HEMTs 2010 MENEGHESSO, GAUDENZIOSTOCCO, ANTONIORONCHI, NICOLO'MENEGHINI, MATTEOTAZZOLI, AUGUSTOZANONI, ENRICO - - The Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2010,
Analysis of DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors based on pulsed measurements and spectroscopic techniques 2010 ZANONI, ENRICOSTOCCO, ANTONIOMENEGHINI, MATTEORAMPAZZO, FABIANARONCHI, NICOLO'TAZZOLI, AUGUSTOMENEGHESSO, GAUDENZIO + - - 5th Space Agency - MOD Round Table Workshop on GaN Component Technologies
Trapping and high-field characterization in Recessed-Gate AlGaN/GaN-on-Silicon HEMT 2010 MENEGHESSO, GAUDENZIORONCHI, NICOLO'STOCCO, ANTONIOZANONI, ENRICO + - - Book of Abstracts of International Workshop on Nitride semiconductors (IWN2010)
Kink and Cathodoluminescence in AlGaN/GaN HEMTs 2010 MENEGHESSO, GAUDENZIOSTOCCO, ANTONIORONCHI, NICOLO'ZANONI, ENRICO + - - WOCSDICE 2010 34rd Workshop on Compound Semiconductor Devices and Integrated Circuits,
A study of trapping phenomena on Recessed-Gate AlGaN/GaN-on- Silicon HEMT 2010 RONCHI, NICOLO'MENEGHINI, MATTEOSTOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Book of abstract of Hetech 2010
Breakdown Walkout induced by reverse bias stress in AlGaN/GaN HEMTs 2009 STOCCO, ANTONIORONCHI, NICOLO'ZANON, FRANCOZANONI, ENRICOMENEGHESSO, GAUDENZIO - - -
Reverse gate bias stress induced degradation of GaN HEMT 2009 ZANONI, ENRICOMENEGHINI, MATTEOTAZZOLI, AUGUSTORONCHI, NICOLO'STOCCO, ANTONIOMENEGHESSO, GAUDENZIO + - - -
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test 2009 RONCHI, NICOLO'ZANON, FRANCOSTOCCO, ANTONIOTAZZOLI, AUGUSTOZANONI, ENRICOMENEGHESSO, GAUDENZIO MICROELECTRONICS RELIABILITY - -
Mostrati risultati da 1 a 20 di 27
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