Sfoglia per Autore  

Opzioni
Mostrati risultati da 1 a 20 di 207
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Depth Dependence of Neutron-induced Errors in 3D NAND Floating Gate Cells 2023 Gerardin S.Bagatin M.Paccagnella A. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs 2023 Bonaldo S.Mattiazzo S.Bagatin M.Paccagnella A.Gerardin S. + ELECTRONICS - -
Total-Ionizing-Dose Effects at Ultra-High Doses in AlGaN/GaN HEMTs 2023 Bonaldo S.Mattiazzo S.Paccagnella A.Gerardin S. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Energy Deposition by Ultrahigh Energy Ions in Large and Small Sensitive Volumes 2022 Bagatin M.Gerardin S.Paccagnella A. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experiments 2022 Bonaldo S.Ma T.Mattiazzo S.Paccagnella A.Gerardin S. + NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT - -
Radiation Tolerant Multi-Bit Flip-Flop System With Embedded Timing Pre-Error Sensing 2022 Jain A.Gerardin S.Bagatin M. + IEEE JOURNAL OF SOLID-STATE CIRCUITS - -
Influence of Fin- and Finger-Number on TID Degradation of 16 nm Bulk FinFETs Irradiated to Ultra-High Doses 2022 Ma T.Bonaldo S.Mattiazzo S.Paccagnella A.Gerardin S. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultra-High Doses 2022 Bonaldo S.Ma T.Mattiazzo S.Bagatin M.Paccagnella A.Gerardin S. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs 2022 Ma, TBonaldo, SMattiazzo, SPaccagnella, AGerardin, S + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Single Event Effects in 3D NAND Flash Memory Cells with Replacement Gate Technology 2022 Bagatin M.Gerardin S.Paccagnella A. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Secondary Particles Generated by Protons in 3D NAND Flash Memories 2022 Bagatin M.Gerardin S.Paccagnella A. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses 2021 Ma T.Bonaldo S.Mattiazzo S.Paccagnella A.Gerardin S. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
A Heavy-Ion Beam Monitor Based on 3-D NAND Flash Memories 2021 Gerardin S.Bagatin M.Paccagnella A. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Depth Dependence of Threshold Voltage Shift in 3-D Flash Memories Exposed to X-Rays 2021 Bagatin M.Gerardin S.Paccagnella A. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Characterizing High-Energy Ion Beams with PIPS Detectors 2020 Bagatin M.Gerardin S.Paccagnella A. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses 2020 Bonaldo S.Mattiazzo S.Paccagnella A.Gerardin S. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
A Heavy-Ion Detector Based on 3-D NAND Flash Memories 2020 Bagatin M.Gerardin S.Paccagnella A. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Alpha, Heavy Ion and Neutron Test Results On 90nm ST BCD-CMOS technology 2020 Abhishek JainS. GerardinM. Bagatin + - - Alpha, Heavy Ion and Neutron Test Results On 90nm ST BCD-CMOS technology
Total-Ionizing-Dose Effects on InGaAs FinFETs with Modified Gate-stack 2020 Paccagnella A.Bonaldo S.Gerardin S. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 Dielectrics 2020 Bonaldo S.Gerardin S.Paccagnella A. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Mostrati risultati da 1 a 20 di 207
Legenda icone

  •  file ad accesso aperto
  •  file disponibili sulla rete interna
  •  file disponibili agli utenti autorizzati
  •  file disponibili solo agli amministratori
  •  file sotto embargo
  •  nessun file disponibile