Sfoglia per Autore
Total-Ionizing-Dose Effects at Ultra-High Doses in AlGaN/GaN HEMTs
2023 Bonaldo, S.; Zhang, E. X.; Mattiazzo, S.; Paccagnella, A.; Gerardin, S.; Schrimpf, R. D.; Fleetwood, D. M.
Depth Dependence of Neutron-induced Errors in 3D NAND Floating Gate Cells
2023 Gerardin, S.; Bagatin, M.; Paccagnella, A.; Beltrami, S.; Benvenuti, A.; Cazzaniga, C.
Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs
2023 Bonaldo, S.; Mattiazzo, S.; Bagatin, M.; Paccagnella, A.; Margutti, G.; Gerardin, S.
Influence of Fin- and Finger-Number on TID Degradation of 16 nm Bulk FinFETs Irradiated to Ultra-High Doses
2022 Ma, T.; Bonaldo, S.; Mattiazzo, S.; Baschirotto, A.; Enz, C.; Paccagnella, A.; Gerardin, S.
DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experiments
2022 Bonaldo, S.; Ma, T.; Mattiazzo, S.; Baschirotto, A.; Enz, C.; Fleetwood, D. M.; Paccagnella, A.; Gerardin, S.
Secondary Particles Generated by Protons in 3D NAND Flash Memories
2022 Bagatin, M.; Gerardin, S.; Paccagnella, A.; Costantino, A.; Ferlet-Cavrois, V.; Santin, G.; Muschitiello, M.; Pesce, A.; Beltrami, S.
Single Event Effects in 3D NAND Flash Memory Cells with Replacement Gate Technology
2022 Bagatin, M.; Gerardin, S.; Paccagnella, A.; Costantino, A.; Ferlet-Cavrois, V.; Pesce, A.; Beltrami, S.
Radiation Tolerant Multi-Bit Flip-Flop System With Embedded Timing Pre-Error Sensing
2022 Jain, A.; Veggetti, A. M.; Crippa, D.; Benfante, A.; Gerardin, S.; Bagatin, M.
Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs
2022 Ma, T; Bonaldo, S; Mattiazzo, S; Baschirotto, A; Enz, C; Paccagnella, A; Gerardin, S
Energy Deposition by Ultrahigh Energy Ions in Large and Small Sensitive Volumes
2022 Bagatin, M.; Gerardin, S.; Paccagnella, A.; Santin, G.; Costantino, A.; Ferlet-Cavrois, V.; Muschitiello, M.; Beltrami, S.; Voss, K. O.; Trautmann, C.
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultra-High Doses
2022 Bonaldo, S.; Gorchichko, M.; Zhang, E. X.; Ma, T.; Mattiazzo, S.; Bagatin, M.; Paccagnella, A.; Gerardin, S.; Schrimpf, R. D.; Reed, R. A.; Linten, D.; Mitard, J.; Fleetwood, D. M.
Depth Dependence of Threshold Voltage Shift in 3-D Flash Memories Exposed to X-Rays
2021 Bagatin, M.; Gerardin, S.; Paccagnella, A.; Beltrami, S.
A Heavy-Ion Beam Monitor Based on 3-D NAND Flash Memories
2021 Gerardin, S.; Bagatin, M.; Paccagnella, A.; Beltrami, S.; Costantino, A.; Santin, G.; Pesce, A.; Ferlet-Cavrois, V.; Voss, K.
TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses
2021 Ma, T.; Bonaldo, S.; Mattiazzo, S.; Baschirotto, A.; Enz, C.; Paccagnella, A.; Gerardin, S.
Alpha, Heavy Ion and Neutron Test Results On 90nm ST BCD-CMOS technology
2020 Jain, Abhishek; Veggetti, Andrea; Crippa, D.; Benfante, A.; Gerardin, S.; Bagatin, M.; Cazzaniga, C.
Thermal Neutron-Induced SEUs in the LHC Accelerator Environment
2020 Cecchetto, M.; Garcia Alia, R.; Wrobel, F.; Tali, M.; Stein, O.; Lerner, G.; Bilko, K.; Esposito, L.; Bahamonde Castro, C.; Kadi, Y.; Danzeca, S.; Brucoli, M.; Cazzaniga, C.; Bagatin, M.; Gerardin, S.; Paccagnella, A.
Single Phase Clock Based Radiation Tolerant D Flip-flop Circuit
2020 Jain, A.; Veggetti, A.; Crippa, D.; Benfante, A.; Gerardin, S.; Bagatin, M.
Total-Ionizing-Dose Effects in InGaAs MOSFETs with High-k Gate Dielectrics and InP Substrates
2020 Bonaldo, S.; Zhang, E. X.; Zhao, S. E.; Putcha, V.; Parvais, B.; Linten, D.; Gerardin, S.; Paccagnella, A.; Reed, R. A.; Schrimpf, R. D.; Fleetwood, D. M.
Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses
2020 Bonaldo, S.; Mattiazzo, S.; Enz, C.; Baschirotto, A.; Fleetwood, D. M.; Paccagnella, A.; Gerardin, S.
A Heavy-Ion Detector Based on 3-D NAND Flash Memories
2020 Bagatin, M.; Frost, C.; Gerardin, S.; Paccagnella, A.; Beltrami, S.; Costantino, A.; Poivey, C.; Santin, G.; Ferlet-Cavrois, V.; Cazzaniga, C.
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