Sfoglia per Autore
Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation
2015 Marino, FABIO ALESSIO; Bisi, Davide; Meneghini, Matteo; Verzellesi, G.; Zanoni, Enrico; Van Hove, M.; You, S.; Decoutere, S.; Marcon, D.; Stoffels, S.; Ronchi, N.; Meneghesso, Gaudenzio
Double Control Gate Field-Effect Transistor for Area Efficient and Cost Effective Applications
2014 Marino, FABIO ALESSIO; Stocco, Antonio; Barbato, Marco; Zanoni, Enrico; Meneghesso, Gaudenzio
Breakdown investigation in GaN-based MIS-HEMT devices
2014 Marino, FABIO ALESSIO; Bisi, Davide; Meneghini, Matteo; Giovanni, Verzellesi; Zanoni, Enrico; Marleen Van, Hove; Shuzhen, You; Stefaan, Decoutere; Denis, Marcon; Steve, Stoffels; Nicolo, Ronchi; Meneghesso, Gaudenzio
Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs
2014 Bisi, Davide; Meneghini, Matteo; Marino, FABIO ALESSIO; D., Marcon; S., Stoffels; M. V., Hove; S., Decoutere; Meneghesso, Gaudenzio; Zanoni, Enrico
Multi-gate Enhancement Mode AlGaN/GaN HEMT
2014 Marino, FABIO ALESSIO; DE SANTI, Carlo; P., Menegoli; Meneghesso, Gaudenzio
Double-Halo Field-Effect Transistor—A Multifunction Device to Sustain the Speed and Density Rate of Modern Integrated Circuits
2011 Marino, FABIO ALESSIO; Meneghesso, Gaudenzio
Multifunctional Field-Effect Transistor for High-Density Integrated Circuits
2011 Marino, FABIO ALESSIO; Meneghesso, Gaudenzio
Logic gate for integrated circuits (ICs), has first pair of switches activated alternately and connected to first node and output node by respective terminal, and second pair of switches to bring output node to potential of second node
2011 Paccagnella, Alessandro; Marino, FABIO ALESSIO
Advanced Simulation Methods for the Development and Characterization of New Devices
2010 Marino, Fabio Alessio
Logic gate for integrated circuits (ICs), has first pair of switches activated alternately and connected to first node and output node by respective terminal, and second pair of switches to bring output node to potential of second node
2010 Paccagnella, Alessandro; Marino, FABIO ALESSIO
Logic gate for integrated circuits (ICs), has first pair of switches activated alternately and connected to first node and output node by respective terminal, and second pair of switches to bring output node to potential of second node
2010 Paccagnella, Alessandro; Marino, FABIO ALESSIO
Logic gate for integrated circuits (ICs), has first pair of switches activated alternately and connected to first node and output node by respective terminal, and second pair of switches to bring output node to potential of second node
2009 Paccagnella, Alessandro; Marino, FABIO ALESSIO
Logic gate for integrated circuits (ICs), has first pair of switches activated alternately and connected to first node and output node by respective terminal, and second pair of switches to bring output node to potential of second node
2009 Paccagnella, Alessandro; Marino, FABIO ALESSIO
False Surface Trap Signatures Induced by Buffer Traps in AlGaN/GaN HEMTs
2009 G., Verzellesi; M., Faqir; A., Chini; F., Fantini; Meneghesso, Gaudenzio; Zanoni, Enrico; Danesin, Francesca; Zanon, Franco; Rampazzo, Fabiana; Marino, FABIO ALESSIO; A., Cavallini; A., Castaldini
Passivation degradation induced by thermal storage on AlGaN/GaN HEMTs
2008 Danesin, Francesca; Marino, FABIO ALESSIO; Tazzoli, Augusto; Zanon, Franco; Meneghesso, Gaudenzio; Zanoni, Enrico; A., Cetronio; C., Lanzieri; S., Lavanga; M., Peroni; P., Romanini
Development of a New High Holding Voltage SCR-based ESD Protection Structure
2008 Meneghesso, Gaudenzio; Tazzoli, Augusto; Marino, FABIO ALESSIO; M., Cordoni; P., Colombo
Transistore ad effetto di campo con giunzione metallo semiconduttore
2008 Marino, FABIO ALESSIO; Meneghesso, Gaudenzio
Alternative GGnMOS Triggered SCR ESD Protection Structure in CMOS Technology for the Manufacture of High- Density Integration Circuits
2008 Marino, FABIO ALESSIO; Meneghesso, Gaudenzio
Alternative ESD Protection Structure in CMOS Technology for the Manufacture of High-Density Integration Circuits
2007 Marino, FABIO ALESSIO; Meneghesso, Gaudenzio
Field Effect Transistor with Metal-Semiconductor Junction
2007 Marino, FABIO ALESSIO; Meneghesso, Gaudenzio
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