DE SANTI, CARLO

DE SANTI, CARLO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 20 di 177 (tempo di esecuzione: 0.114 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal 2018 Rossetto, I.Meneghini, M.De Santi, C.PANDEY, SUDIPMeneghesso, G.Zanoni, E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
A novel in-situ approach to monitor the variations in the on-resistance of power transistors during switching operation 2023 Cavaliere, A.De Santi, C.Meneghesso, G.Zanoni, E.Meneghini, M. MICROELECTRONICS RELIABILITY - -
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects 2020 Modolo N.Meneghini M.Barbato A.Nardo A.De Santi C.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs 2020 Modolo, NicolaDe Santi, CarloMeneghini, Matteo + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires 2016 DE SANTI, CARLOMENEGHINI, MATTEOZANONI, ENRICO + JOURNAL OF APPLIED PHYSICS - -
A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs 2021 Modolo N.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + IEEE ELECTRON DEVICE LETTERS - -
A review of the reliability of integrated ir laser diodes for silicon photonics 2021 Buffolo M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + ELECTRONICS - -
Addressing the Optical Degradation of 1.3 μm Quantum Dot Lasers through Subthreshold Characterization 2023 Zenari, MicheleBuffolo, MatteoDe Santi, CarloMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + ACS PHOTONICS - -
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 2015 LA GRASSA, MARCOMENEGHINI, MATTEODE SANTI, CARLOMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Analysis of Current Transport Layer Localized Resistivity Increase After High Stress on InGaN LEDs 2023 Trivellin, NicolaBuffolo, MatteoDe Santi, CarloZanoni, EnricoMeneghesso, GaudenzioMeneghini, Matteo IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN INDUSTRIAL ELECTRONICS - -
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs 2020 Mukherjee K.Borga M.Ruzzarin M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS EXPRESS - -
Bias-dependent degradation of single quantum well on InGaN-based light emitting diode 2023 Casu, C.Buffolo, M.Caria, A.Piva, F.De Santi, C.Meneghesso, G.Zanoni, E.Meneghini, M. MICROELECTRONICS RELIABILITY - -
Breakdown Walkout in Polarization-Doped Vertical GaN Diodes 2019 Fabris E.Meneghesso G.Zanoni E.Meneghini M.De Santi C.Caria A. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 2022 Modolo N.Fregolent M.Masin F.Benato A.Bettini A.Buffolo M.De Santi C.Borga M.Vogrig D.Neviani A.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Carrier capture kinetics, deep levels, and isolation properties of β -Ga2O3Schottky-barrier diodes damaged by nitrogen implantation 2020 De Santi C.Fregolent M.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS LETTERS - -
Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs 2020 De Santi C.Nardo A.Meneghesso G.Zanoni E.Meneghini M. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization 2021 De Santi, CarloBuffolo, MatteoMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + MATERIALS - -
Challenges and perspectives for vertical gan-on-si trench mos reliability: From leakage current analysis to gate stack optimization 2021 Mukherjee K.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + MATERIALS - -
Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias 2019 Ruzzarin M.De Santi C.Chiocchetta F.Zanoni E.Meneghesso G.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Charge trapping in 0.1 μm AlGaN/GaN RF HEMTs: Dependence on barrier properties, voltage and temperature 2021 Chiocchetta F.De Santi C.Rampazzo F.Meneghini M.Meneghesso G.Zanoni E. MICROELECTRONICS RELIABILITY - -