BERTI, MARINA
 Distribuzione geografica
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Continente #
NA - Nord America 6.477
EU - Europa 591
AS - Asia 403
OC - Oceania 2
Continente sconosciuto - Info sul continente non disponibili 1
Totale 7.474
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Nazione #
US - Stati Uniti d'America 6.473
CN - Cina 302
FI - Finlandia 168
DE - Germania 117
UA - Ucraina 105
SE - Svezia 75
IN - India 68
GB - Regno Unito 58
IT - Italia 53
VN - Vietnam 30
IE - Irlanda 8
CA - Canada 4
RU - Federazione Russa 3
BG - Bulgaria 2
IR - Iran 2
AU - Australia 1
CH - Svizzera 1
EU - Europa 1
ID - Indonesia 1
NL - Olanda 1
NZ - Nuova Zelanda 1
Totale 7.474
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Città #
Fairfield 1.072
Woodbridge 933
Houston 652
Jacksonville 533
Ann Arbor 520
Ashburn 441
Seattle 431
Wilmington 393
Cambridge 324
Chandler 316
Princeton 185
San Diego 123
Beijing 82
Nanjing 64
Helsinki 59
Boardman 47
Medford 44
Dong Ket 30
Guangzhou 30
Hebei 27
Shenyang 24
Des Moines 23
London 19
Jiaxing 18
Norwalk 17
Nanchang 16
Roxbury 15
Tianjin 15
Pune 10
Padova 9
Changsha 8
Mestre 8
Dublin 7
Venice 7
Milan 6
Ogden 6
Redwood City 6
Falls Church 5
Indiana 5
Kharkiv 5
New Bedfont 5
Bangalore 4
Borås 4
Chiswick 4
Gorizia 4
Jinan 4
New York 4
Shanghai 4
Acton 3
Rockville 3
Suri 3
Ardabil 2
Castenaso 2
Chicago 2
Hounslow 2
Kilburn 2
Las Vegas 2
Munich 2
Prescot 2
San Francisco 2
Sofia 2
Zhengzhou 2
Berlin 1
Bulach 1
Cervia 1
Christchurch 1
Edinburgh 1
Frankfurt am Main 1
Fuzhou 1
Groningen 1
Hangzhou 1
Hefei 1
High Wycombe 1
Jakarta 1
Leawood 1
Marburg 1
Mumbai 1
Ningbo 1
Nürnberg 1
Ottawa 1
Pinehaven 1
Regina 1
Rome 1
Saint Petersburg 1
Santa Lucia Di Piave 1
Sligo 1
Sydney 1
Tampere 1
Tappahannock 1
Trento 1
Turin 1
Wandsworth 1
Washington 1
Totale 6.630
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Nome #
Strong deviation of the lattice parameter in Si1-x-yGexCy epilayers from Vegard's rule 124
X-ray absorption and diffraction study of II-VI dilute oxide semiconductor alloy epilayers 120
Photocurrent spectroscopy of GaN and AlGaN epilayers grown on 6H (0001) silicon carbide 107
12C(α,α)12C resonant elastic scattering at 5.7 MeV as a tool for carbon quantification in silicon-based heterostructures 101
Hydrogen diffusion in GaAs1-xNx 100
Formation and dissolution of D-N complexes in dilute nitrides 100
Mechanisms of strain release in molecular-beam epitaxy-grown InGaAs/GaAs buffer heterostructures 99
Low pressure MOVPE growth and structural properties of ZnMgSe epilayers on (100)GaAs 98
Channeling effects in high energy ion implantation: Si(N) 97
Transformation To Amorphous State of Metals By Ion-implantation - P In Ni 96
Crack formation in tensile InGaAS/InP layers 95
Electron and ion-beam analysis of composition and strain in Si1-xGex Si heterostructures 95
Transition from island to continuous InP layer growth on (001)GaAs by MOCVD 94
PRODUCTION AND CHARACTERIZATION OF QUANTUM NANOSTRUCTURES OF EPITAXIAL SEMICONDUCTORS 93
Structural study of the influence of different growth parameters on the quality of InxGa1-xN/GaN films grown by MOCVD 92
Matrix Atomic Losses and Oxygen Incorporation Under Ruby-laser Irradiation of Silicon In Gaseous Atmospheres 92
Determination of lattice parameter and of N lattice location in InxGa1-xNyAs1-y/GaAs and GaNyAs1-y/GaAs epilayers 92
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain 90
Self Annealing Effects In P+ Implanted Silicon 90
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy 89
Explosive Crystallization of Dilute Amorphous Si-ge Alloys 89
Nitrogen-induced hindering of In incorporation in InGaAsN 88
InP/GaAs self-assembled nanostructures: Modelization and experiment 86
Measurement of aluminum concentration in the Ga1-xAlxSb/GaSb epitaxial system 86
Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping 86
Strain relaxation of SiGe in a Si/SiGe/Si heterostructure under proton irradiation 86
Structural and electronic properties of wide band gap Zn1-xMgxSe alloys 84
Role of C in the formation and kinetics of nanovoids induced by He+ implantation in Si 83
Static and dynamic screening of the polarization fields in nitride nanostructures: a theoretical and experimental study 82
Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection 82
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution 82
Local structure of nitrogen-hydrogen complexes in dilute nitrides 81
Matrix effects in SIMS depth profiles of SiGe relaxed buffer layers 80
Lattice parameter in Si1-yCy epilayers: deviation from Vegard's rule 80
Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping 79
Correlation between defects, residual strain and morphology in continuously graded InGaAs/GaAs buffers 79
Substitutional B in Si: Accurate lattice parameter determination 79
Diffusion and clustering of supersaturated carbon in SiGeC layers under oxidation 78
Evidence for a new hydrogen complex in dilute nitride alloys 78
Local lattice distortion in Si1-x-yGexCy epitaxial layers from x-ray absorption fine structure 78
Stranski-Krastanow MOVPE growth of nanoscale ZnTe islands on (0 0 1)GaAs 76
Metastability of Si1-yCy epilayers under 2 MeV alpha particle irradiation 75
Mechanism of Ion Induced Amorphization 74
Dose-rate Effects On the Dynamic Annealing Mechanism In P+-implanted Silicon 73
Structural characterization techniques for the analysis of semiconductor strained heterostructures 73
Diffusion enhanced carbon loss from SiGeC layers due to oxidation 72
Self-interstitials and substitutional C in silicon: Interstitial- trapping and C- clustering 72
Composition control of GaSbAs alloys 72
Influence of the N2/H2 ratio on the structural features of InxGa1-xN/GaN films grown by MOCVD 72
Determination of selenium in blood serum by proton-induced X-ray emission. 72
12C(a,a)12C resonant elastic scattering at 5.72 MeV as a tool for carbon quantification in Silicon-based heterostructures 72
'Experimental Evidence of 2D-3D transition in the Stranski-Krastanow coherent growth' 71
Lattice parameter of Si1-x-yGexCy alloys 71
Substitutional and clustered B in ion implanted Ge: Strain determination 71
Assessment of Vegard's law validity in the Ga1-xAlxSb/GaSb epitaxial System 71
On the Dynamic Annealing Mechanism In P+-implanted Silicon 71
Silicon Loss During Tisi2 Formation 71
Composition and structure of Si-Ge layers produced by ion implantation and laser melting 69
Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDsGallium Nitride Materials and Devices VIII 69
Hydrogen-nitrogen complexes in dilute nitride alloys: origin of the compressive strain 68
Effect of hydrogen incorporation temperature in in plane-engineered GaAsN/GaAsN.H heterostructures 67
Influence of Channeling Effects On Ion Distribution and Damage Profiles During High-energy Ion-implantation In Si 66
Suppression of boron transient enhanced diffusion by C trapping 65
Interaction between self-interstitials and substitutional C in silicon: Interstitial trapping and C clustering mechanism 64
Titanium silicide formation: Effect of oxygen distribution in the metal film 64
A systematic investigation of strain relaxation, surface morphology and defects in tensile and compressive InGaAs/InP layers 64
Carbon diffusion and clustering in SiGeC layers under thermal oxidation 64
Localization of He induced nanovoids in buried Si1-xGex thin films 64
Pre-amorphization Damage Study In As-implanted Silicon 63
Electronic structure and morphology of SiC films grown on Si(111) using C-60 as a precursor 63
On the contribution of secondary fluorescence to the Fe signal in proton-induced X-ray emission channeling measurements of Fe-doped GaN 62
Thermal evolution of small N-D complexes in deuterated dilute nitrides revealed by in-situ high resolution X-ray diffraction 62
Ion beam characterization of Fe implanted GaN 62
Self-organized growth of ZnTe nanoscale islands on 001 GaAs 61
Transient Annealing As A Tool For the Investigation of Thin-film Substrate Solid-phase Reactions 60
Recent developments of the RBS technique for the analysis of semiconductor nanostructures 60
Physicochemical Properties of Photo-cvd Silicon-nitride Thin-films 59
Influence of As incorporation on the deviation from Vegard's law in the AlxGa1-xSb/GaSb system 58
Influence of Channeling Effects On Ion Distribution and Damage Profiles During High-energy Ion-implantation In Si 58
Silicon interstitial driven loss of substitutional carbon from SiGeC structures 57
Microscopic origin of compressive strain in hydrogen-irradiated dilute GaAs_{1−y}N_{y} alloys: Role of N-H_{n} centers with n>2 and their thermal stability 57
Transmission electron microscopy, high-resolution X-ray diffraction and Rutherford backscattering study of strain release in InGaAs/GaAs buffer layers 57
New insight on the interaction and diffusion properties of ion beam injected self-interstitials in crystalline silicon 57
High resolution X-ray diffraction in situ study of very small complexes: the case of hydrogenated dilute nitrides 56
Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes 56
Behaviour of metastable Si/sub 1 y/C/sub y/ epilayers under 2 MeV alpha particles irradiation 53
Lattice Stress and Electrically Active Defects Induced By Ion Channeling In the Initial Layers of Iii-v Compounds 53
The thermal corrosion of ion-implanted zirconium 53
Broad-area optical characterization of well-width homogeneity inGaN/AlxGa1-xN multiple quantum wells grown on sapphire wafers 51
Optical and transport properties of GaN/Al0.15Ga0.85N quantum wells 51
Self interstitials diffusion and clustering with impurities in crystalline silicon 50
Experimental evidence of two-dimensional-three-dimensional transition in the Stranski-Krastanow coherent growth 49
Charge storage and screening of the internal field in GaN/AlGaN quantum wells 47
Growth and structure of titanium silicide phases formed by thin Ti films on Si crystals 47
Ferromagnetism in ion implanted amorphous and nanocrystalline MnxGe1-x 46
Structural characterization and stability of Si1-xGex/Si(100) heterostructures grown by molecular beam heteroepitaxy 45
Bond-length variation in InxGa1-xAs/InP strained epitaxial layers (vol 57, pg 14 619, 1998) 45
Bond-length variation in InxGa1-xAs/InP strained epitaxial layers 43
Behaviour of metastable si1-yCy epilayers under 2 MeV alpha particles irradiation 40
Strain relaxation under compressive or tensile stress 40
Totale 7.284
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Categoria #
all - tutte 24.021
article - articoli 21.087
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 91
Totale 45.199
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019758 0 0 0 0 0 0 0 0 0 157 331 270
2019/20201.774 296 40 30 105 185 155 157 221 179 179 136 91
2020/20211.196 47 90 14 102 92 174 22 104 224 87 165 75
2021/20221.200 18 105 230 84 61 63 40 146 77 22 158 196
2022/2023774 192 47 8 77 155 97 0 55 103 0 29 11
2023/2024230 19 65 27 28 21 23 10 9 14 14 0 0
Totale 7.492