ZANONI, ENRICO
ZANONI, ENRICO
Dipartimento di Ingegneria dell'Informazione - DEI
"Hot-plugging" of LED modules: Electrical characterization and device degradation
2013 DAL LAGO, Matteo; Meneghini, Matteo; Trivellin, Nicola; G., Mura; M., Vanzi; Meneghesso, Gaudenzio; Zanoni, Enrico
'Hole Redistribution' Model Explaining the Thermally Activated RONStress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs
2021 Zagni, N.; Chini, A.; Puglisi, F. M.; Meneghini, M.; Meneghesso, G.; Zanoni, E.; Pavan, P.; Verzellesi, G.
2.1 A/mm current density AlGaN/GaN HEMT
2003 Chini, Alessandro; Coffie, R.; Meneghesso, Gaudenzio; Zanoni, Enrico; Buttari, Dario; Heikman, S.; Keller, S.; Mishra, U. K.
2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal
2018 Rossetto, I.; Meneghini, M.; De Santi, C.; Pandey, Sudip; Gajda, M.; Hurkx, G. A. M.; Croon, J.; Šonský, J.; Meneghesso, G.; Zanoni, E.
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes
2009 Meneghini, Matteo; Trivellin, Nicola; Meneghesso, Gaudenzio; Zanoni, Enrico; U., Zehnder; B., Hahn
A combined Monte Carlo and experimental analysis of light emission phenomena in AlGaAs/GaAs HBTs
1998 DI CARLO, A; Lugli, P; Canali, C; Malik, R; Manfredi, M; Neviani, Andrea; Zanoni, Enrico; Zandler, G.
A fully electronic sensor for the measurement of cDNA hybridization kinetics
2007 Bandiera, L; Cellere, G; Cagnin, Stefano; DE TONI, A; Zanoni, Enrico; Lanfranchi, Gerolamo; Lorenzelli, L.
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes
2008 Meneghini, Matteo; Rigutti, L; Trevisanello, LORENZO ROBERTO; Cavallini, A; Meneghesso, Gaudenzio; Zanoni, Enrico
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs
2009 Pavesi, M; Rossi, F; Manfredi, M; Salviati, G; Meneghini, Matteo; Zanoni, Enrico
A novel fast and versatile temperature measurement system for LDMOS transistors
2005 Tazzoli, Augusto; Meneghesso, Gaudenzio; Zanoni, Enrico
A novel in-situ approach to monitor the variations in the on-resistance of power transistors during switching operation
2023 Cavaliere, A.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects
2020 Modolo, N.; Meneghini, M.; Barbato, A.; Nardo, A.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Sicre, S.; Prechtl, G.; Curatola, G.
A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires
2016 Musolino, M.; Van Treeck, D; Tahraoui, A.; Scarparo, L.; DE SANTI, Carlo; Meneghini, Matteo; Zanoni, Enrico; Geelhaar, L.; Riechert, H.
A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs
2021 Modolo, N.; De Santi, C.; Minetto, A.; Sayadi, L.; Sicre, S.; Prechtl, G.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
A review of the reliability of integrated ir laser diodes for silicon photonics
2021 Buffolo, M.; De Santi, C.; Norman, J.; Shang, C.; Bowers, J. E.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs
2010 Meneghini, Matteo; Tazzoli, Augusto; Mura, G; Meneghesso, Gaudenzio; Zanoni, Enrico
A review on the reliability of GaN-based LEDs
2008 Meneghini, Matteo; Trevisanello, LORENZO ROBERTO; Meneghesso, Gaudenzio; Zanoni, Enrico
A short-term high-current-density reliability investigation of AlGaAs/GaAs heterojunction bipolar transistors
1998 N., Bovolon; R., Schultheis; J. E., Muller; P., Zwicknagl; Zanoni, Enrico
A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistors
1998 N., Bovolon; P., Baureis; J. E., Muller; P., Zwicknagl; R., Schultheis; Zanoni, Enrico
A study of ESD- induced defects in high-voltage nMOS and pMOS transistors
1992 Paolo, Pavan; Zanoni, Enrico; Bruno, Bonati; Sergio, Martion; Giovanna Dalla, Libera