DALCANALE, STEFANO
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 884
AS - Asia 139
EU - Europa 107
SA - Sud America 2
Totale 1.132
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 884
CN - Cina 126
IT - Italia 40
FI - Finlandia 20
SE - Svezia 14
GB - Regno Unito 8
IN - India 6
DE - Germania 5
NL - Olanda 5
FR - Francia 3
BE - Belgio 2
BR - Brasile 2
CZ - Repubblica Ceca 2
IE - Irlanda 2
TW - Taiwan 2
UA - Ucraina 2
HK - Hong Kong 1
IR - Iran 1
JP - Giappone 1
LT - Lituania 1
ME - Montenegro 1
PL - Polonia 1
RO - Romania 1
SA - Arabia Saudita 1
SG - Singapore 1
Totale 1.132
Salva come PNG Salva come JPEG
Città #
Woodbridge 149
Fairfield 141
Ashburn 105
Ann Arbor 87
Houston 63
Seattle 59
Cambridge 43
Chandler 42
Wilmington 38
Medford 15
Princeton 15
San Diego 15
Des Moines 14
Roxbury 12
Boardman 11
Nanjing 11
Washington 9
Beijing 8
Guangzhou 8
Helsinki 8
Cagliari 6
Jinan 6
Padova 5
Changsha 4
Tianjin 4
Beauvechain 2
Borås 2
Dublin 2
Hebei 2
Hyderabad 2
Indiana 2
Milan 2
Nanchang 2
Ningbo 2
Omegna 2
Palermo 2
Raichur 2
Shanghai 2
Tappahannock 2
Wuhan 2
Xi'an 2
Bengaluru 1
Catanzaro 1
Chongqing 1
Concord 1
Cormeilles-en-Parisis 1
Delhi 1
Edinburgh 1
Hangzhou 1
Islington 1
Jiaxing 1
Kashan 1
Kharkiv 1
Lanzhou 1
Leawood 1
Luoyang 1
Messina 1
Mountain View 1
Natal 1
Ogden 1
Oklahoma City 1
Orange 1
Palo Alto 1
Podgorica 1
Prescot 1
Ravenna 1
Roermond 1
Rome 1
Sesto Calende 1
Shenyang 1
Taipei 1
Taizhou 1
Tokyo 1
Torrance 1
Tupã 1
Vilnius 1
Zhengzhou 1
Zhubei 1
Totale 947
Salva come PNG Salva come JPEG
Nome #
Reliability analysis of GaN HEMT for space applications and switching converters based on advanced experimental techniques and two dimensional device simulations 160
Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate 100
Proton induced trapping effect on space compatible GaN HEMTs 98
Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs 94
Intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices : An industry perspective 83
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure 76
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift 76
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors 70
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 69
Experimental demonstration of weibull distributed failure in p-type GaN high electron mobility transistors under high forward bias stress 67
Temperature-dependent dynamic RON in GaN-based MIS-HEMTs: Role of surface traps and buffer leakage 62
Reliability of Gallium Nitride microwave transistors: A framework for the evaluation of failure mechanisms and instabilities, from accelerated testing to failure analysis and process improvement 60
Failure signatures on 0.25 mu m GaN HEMTs for high-power RF applications 53
Reliability improvement of AlGaN/GaN HEMTs for space applications 52
Simple technique for failure modes detection on high-performances space designed GaN HEMTs 27
Totale 1.147
Salva come PNG Salva come JPEG
Categoria #
all - tutte 3.839
article - articoli 1.664
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.503
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201983 0 0 0 0 0 0 0 0 0 12 29 42
2019/2020193 25 6 4 25 25 12 17 22 22 18 16 1
2020/2021132 8 5 4 20 8 5 4 14 11 9 38 6
2021/2022221 1 44 14 12 20 8 9 23 15 11 18 46
2022/2023140 24 1 2 13 32 19 2 7 15 5 16 4
2023/2024181 13 4 20 10 23 43 17 21 18 12 0 0
Totale 1.147