BUFFOLO, MATTEO
 Distribuzione geografica
Continente #
NA - Nord America 3.450
EU - Europa 1.367
AS - Asia 584
AF - Africa 7
OC - Oceania 5
SA - Sud America 3
Totale 5.416
Nazione #
US - Stati Uniti d'America 3.443
IT - Italia 728
CN - Cina 313
IE - Irlanda 258
FI - Finlandia 82
DE - Germania 73
JP - Giappone 71
GB - Regno Unito 60
IN - India 53
SE - Svezia 45
KR - Corea 34
FR - Francia 29
TW - Taiwan 25
HK - Hong Kong 21
VN - Vietnam 21
SG - Singapore 17
GR - Grecia 14
BE - Belgio 10
CH - Svizzera 9
ID - Indonesia 9
NL - Olanda 9
PL - Polonia 8
UA - Ucraina 7
RU - Federazione Russa 6
SA - Arabia Saudita 5
AT - Austria 4
BD - Bangladesh 4
DK - Danimarca 4
LT - Lituania 4
MA - Marocco 4
MX - Messico 4
NO - Norvegia 4
BR - Brasile 3
CA - Canada 3
CZ - Repubblica Ceca 3
IL - Israele 3
MY - Malesia 3
NZ - Nuova Zelanda 3
RS - Serbia 3
AU - Australia 2
BG - Bulgaria 2
ES - Italia 2
IR - Iran 2
AF - Afghanistan, Repubblica islamica di 1
BH - Bahrain 1
EG - Egitto 1
HR - Croazia 1
KE - Kenya 1
NP - Nepal 1
RO - Romania 1
SK - Slovacchia (Repubblica Slovacca) 1
ZA - Sudafrica 1
Totale 5.416
Città #
Fairfield 575
Padova 351
Ashburn 324
Woodbridge 317
Chandler 301
Dublin 255
Houston 223
Ann Arbor 200
Cambridge 197
Seattle 189
Beijing 171
Wilmington 151
Medford 79
Princeton 79
San Diego 77
Helsinki 58
Des Moines 54
Guangzhou 31
Pune 28
Roxbury 27
Boardman 26
New York 23
Shanghai 22
Los Angeles 19
Pignone 19
Palermo 18
Dong Ket 16
Nanjing 16
Turin 16
Arzignano 15
London 14
Rome 14
Milan 13
Thessaloniki 13
Tokyo 13
Washington 13
Ogden 12
Cagliari 10
Cremona 10
Prescot 9
Lappeenranta 8
Norwalk 8
Parma 8
Phoenix 8
Sarcedo 8
Warsaw 8
Central 7
Albuquerque 6
Borås 6
Chiampo 6
Kharkiv 6
Nanchang 6
Pordenone 6
Seongnam-si 6
Bologna 5
Chengdu 5
Hanoi 5
Hong Kong 5
Moscow 5
New Delhi 5
Quinto di Treviso 5
Saga 5
San Jose 5
Stuttgart 5
Tianjin 5
Umeda 5
Agordo 4
Akiruno 4
Arezzo 4
Berlin 4
Bristol 4
Buffalo 4
Eindhoven 4
Hangzhou 4
Hounslow 4
Hsinchu 4
Jeddah 4
Marseille 4
Munich 4
Naha 4
Oslo 4
Paris 4
Shenyang 4
Taipei City 4
Venustiano Carranza 4
Zurich 4
Balasore 3
Belgrade 3
Birmingham 3
Brahmapur 3
Böblingen 3
Dongguan 3
Duisburg 3
Edinburgh 3
Frankfurt am Main 3
Grenoble 3
Hebei 3
Jinan 3
Kanpur 3
Kwun Hang 3
Totale 4.277
Nome #
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 277
Semi-Transparent Perovskite Solar Cells: Performance and Perspectives 191
Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs 119
Analysis of the mechanisms limiting the reliability of retrofit LED lamps 117
Towards high reliability GaN LEDs: Understanding the physical origin of gradual and catastrophic failure 117
Reliability of blue-emitting Eu2+-doped phosphors for laser-lighting applications 108
Failure causes and mechanisms of retrofit LED lamps 104
Laser-based lighting: Experimental analysis and perspectives 101
Aging behavior, reliability, and failure physics of GaN-based optoelectronic components 98
Defect-related degradation of III-V/Silicon 1.55 μm DBR laser diodes 94
White-light sources based on GaN laser diodes: Analysis and application study 90
Investigation of the time-dependent failure of InGaN-based LEDs submitted to reverse-bias stress 88
Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage 87
Challenges for highly reliable GaN-based LEDs 87
Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs 83
Long-term degradation mechanisms of mid-power LEDs for lighting applications 82
Understanding the degradation processes of GaN based LEDs submitted to extremely high current density 82
GaN-based InGaN/GaN MQWs solar cells for innovative applications: performance and modeling 81
Origin of the low-forward leakage current in InGaN-based LEDs 77
Investigation of Current-Driven Degradation of 1.3 μm Quantum-Dot Lasers Epitaxially Grown on Silicon 74
Current induced degradation study on state of the art DUV LEDs 73
Reliability of III-V laser diodes and LEDs for lighting and telecommunication applications 72
Physical origin of the optical degradation of InAs quantum dot lasers 71
Failures of LEDs in Real-World Applications: A Review 67
Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress 67
Reliability of High Power LEDs: from gradual to catastrophic failure 66
Failure of high power LEDs submitted to EOS: Dependence on device layout and pulse properties 64
Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits 62
Efficiency and Catastrophic Failure of High-Power Blue GaN LEDs During Extremely High Temperature and Current Stress 61
Degradation mechanisms of InAs quantum dot 1.3μm laser diodes epitaxially grown on silicon 60
Characterization and C-DLTS analysis of antimony selenide solar cells 59
Modeling of the Optical and Electrical Degradation of 845 nm VCSILs 59
SSL Solutions for Human Centric Lighting 58
Experimental Demonstration of Time-Dependent Breakdown in GaN-Based Light Emitting Diodes 58
Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis 58
Degradation processes of 280 nm high power DUV LEDs: Impact on parasitic luminescence 57
Demonstration of current-dependent degradation of quantum-dot lasers grown on silicon: Role of defect diffusion processes 54
Electrical overstress robustness of latest generation LEDs for general lighting 49
Inactivating SARS-CoV-2 Using 275 nm UV-C LEDs through a Spherical Irradiation Box: Design, Characterization and Validation 48
Degradation mechanisms of 1.6 W blue semiconductor lasers: Effect on subthreshold optical power and power spectral density 47
III-N optoelectronics: defects, reliability and challenges 44
Mid-power LEDs for lighting applications: degradation mechanisms and kinetics 44
Carrier capture kinetics, deep levels, and isolation properties of β -Ga2O3Schottky-barrier diodes damaged by nitrogen implantation 44
Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy 43
Electro-thermally activated degradation of InGaN-based green laser diodes 42
Degradation mechanisms in high power InGaN semiconductor lasers investigated by electrical, optical, spectral and C-DLTS measurements 42
LED lighting: nuove piattaforme tecnologiche per l’illuminazione ad alta efficienza 40
Full Optical Contactless Thermometry Based on LED Photoluminescence 40
Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics 40
Failure mechanisms of GaN HEMTs for microwave and millimeter-wave applications: From interdiffusion effects to hot-electrons degradation 39
EOS-related failures of modern high-brightness white LEDs: failure limits and correlation with device structure 37
Nuove strategie per le sorgenti LED ad alta luminanza: uno sguardo al futuro 37
Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3Schottky barrier diodes 37
Degradation Mechanisms of Heterogeneous III-V/Silicon 1.55- μm DBR Laser Diodes 36
Performances and reliability analysis of 280nm High Power DUV LEDs 36
Reliability of mid-power LEDs for lighting applications 36
Analysis of degradation mechanisms in UVC single QW LEDs through electrical, optical and spectral measurements 34
Decrease in the injection efficiency and generation of midgap states in UV-C LEDs: A model based on rate equations 34
Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications 34
Defects and Reliability of GaN-Based LEDs: Review and Perspectives 34
Time-Dependent Breakdown in GaN-Based LEDs—Description and Physical Origin 33
Glass-ceramic composites for high-power white-light-emitting diodes 33
Degradation of 1.3 μm InAs Quantum-Dot Laser Diodes: Impact of Dislocation Density and Number of Quantum Dot Layers 32
Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer 32
Challenges and perspectives for vertical gan-on-si trench mos reliability: From leakage current analysis to gate stack optimization 31
Novel models for the analysis of the dynamic performance of wide bandgap devices 30
Degradation Processes and Aging in Quantum Dot Lasers on Silicon 29
A review of the reliability of integrated ir laser diodes for silicon photonics 29
Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+ n− n diodes: The road to reliable vertical MOSFETs 28
Reliability of Commercial UVC LEDs: 2022 State-of-the-Art 28
InGaN/GaN Multiple Quantum Wells solar cells: a trade-off in p-GaN thickness, to optimize reliability and quantum efficiency 28
Hydrogen-terminated diamond MESFETs: Operating principles, static and dynamic performance, and reliability 27
Electrical, optical characterization and degradation of Cu(InGa)Se2 devices with fluorine-doped tin oxide back contact 27
Discriminating the effects of deep-levels in InGaN/GaN LEDs: impact on forward leakage current 26
How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs? identification of SRH centers and modeling of trap profile 26
Origin of the Diffusion-Related Optical Degradation of 1.3 μm Inas QD-LDs Epitaxially Grown on Silicon Substrate 26
Uv-based technologies for sars-cov2 inactivation: Status and perspectives 25
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics 24
Demonstration of tunneling and sub-bandgap recombination in InGaN LEDs at extremely low current levels 24
Dynamic performance characterization techniques in gallium nitride-based electronic devices 24
Degradation mechanisms of 1.3 μm C-doped quantum dot lasers grown on native substrate 24
Effect of indium content and carrier distribution on the efficiency and reliability of InGaN/GaN-based multi quantum well light emitting diode 24
Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics 23
UV LED reliability: degradation mechanisms and challenges 23
GaN-based power devices: Physics, reliability, and perspectives 23
Review on the degradation of GaN-based lateral power transistors 22
Status of Performance and Reliability of 265 nm Commercial UV-C LEDs in 2023 22
Phosphors for laser based lighting systems: quantitative investigation of performance and degradation 22
High-Temperature Reliability of Retrofit LED Bulbs 21
Trapping processes and band discontinuities in Ga2O3FinFETs investigated by dynamic characterization and optically-assisted measurements 21
Current crowding as a major cause for InGaN LED degradation at extreme high current density 21
Modeling of TAT-related forward leakage current in InGaN/GaN SQW LEDs based on experimentally-determined defects parameters 20
EOS and ESD-related failures of GaN-based LEDs 19
DLTS-based defect analysis in UV-C single QW LEDs during a constant current stress 19
Temperature and Chip Size Dependance of Carrier Recombination Dynamics and Droop Behavior on High Power COTS-LEDs 19
Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy 18
Impact of a defect trapping layer on the reliability of 1.3 μm quantum dot laser diodes grown on silicon 17
Investigation of deep level defects in n-type GaAsBi 16
Characterization and Modeling of quantum efficiency InGaN-GaN Multi-Quantum Well (MQW) solar cells 15
Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations 15
Totale 5.106
Categoria #
all - tutte 27.653
article - articoli 15.155
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 42.808


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019223 0 0 0 0 0 0 0 0 0 43 100 80
2019/2020658 70 26 10 31 62 39 57 70 90 150 19 34
2020/2021681 38 39 30 25 11 12 44 127 67 74 48 166
2021/2022927 44 98 82 35 15 48 107 98 55 34 122 189
2022/20231.144 152 31 25 56 151 108 81 99 167 24 150 100
2023/20241.557 137 265 211 150 140 209 183 87 94 81 0 0
Totale 5.587