MEDJDOUB, FARID
MEDJDOUB, FARID
Dipartimento di Ingegneria dell'Informazione - DEI
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment
2019 Borga, M.; Meneghini, M.; Benazzi, D.; Canato, E.; Pusche, R.; Derluyn, J.; Abid, I.; Medjdoub, F.; Meneghesso, G.; Zanoni, E.
Degradation processes and origin in InGaN-based high-power photodetectors
2018 De Santi, Carlo; Meneghini, M.; Caria, Alessandro; Dogmus, E.; Zegaoui, M.; Medjdoub, Farid; Zanoni, E.; Meneghesso, G.
Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices
2018 De Santi, C.; Meneghini, M.; Caria, Alessandro; Renso, N.; Dogmus, E.; Zegaoui, M.; Medjdoub, Farid; Zanoni, E.; Meneghesso, G.
Evidence of optically induced degradation in gallium nitride optoelectronic devices
2018 De Santi, Carlo; Caria, Alessandro; Renso, Nicola; Dogmus, Ezgi; Zegaoui, Malek; Medjdoub, Farid; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
GaN-based power devices: Physics, reliability, and perspectives
2021 Meneghini, M.; De Santi, C.; Abid, I.; Buffolo, M.; Cioni, M.; Khadar, R. A.; Nela, L.; Zagni, N.; Chini, A.; Medjdoub, F.; Meneghesso, G.; Verzellesi, G.; Zanoni, E.; Matioli, E.
High breakdown voltage and low buffer trapping in superlattice gan-on-silicon heterostructures for high voltage applications
2020 Tajalli, A.; Meneghini, M.; Besendorfer, S.; Kabouche, R.; Abid, I.; Pusche, R.; Derluyn, J.; Degroote, S.; Germain, M.; Meissner, E.; Zanoni, E.; Medjdoub, F.; Meneghesso, G.
Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs
2019 Rzin, M.; Meneghini, M.; Rampazzo, F.; Zhan, V. G.; De Santi, C.; Kabouche, R.; Zegaoui, M.; Medjdoub, F.; Meneghesso, G.; Zanoni, E.
Low On-Resistance and Low Trapping Effects in 1200 V Superlattice GaN-on-Silicon Heterostructures
2019 Kabouche, R.; Abid, I.; Pusche, R.; Derluyn, J.; Degroote, S.; Germain, M.; Tajalli, A.; Meneghini, M.; Meneghesso, G.; Medjdoub, F.
Photon-driven degradation processes in GaN-based optoelectronic devices
2019 De Santi, C.; Caria, A.; Renso, N.; Dogmus, E.; Zegaoui, M.; Medjdoub, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Vertical breakdown of GaN on Si due to V-pits
2020 Besendorfer, S.; Meissner, E.; Tajalli, A.; Meneghini, M.; Freitas, J. A.; Derluyn, J.; Medjdoub, F.; Meneghesso, G.; Friedrich, J.; Erlbacher, T.
Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment
2020 Tajalli, A.; Borga, M.; Meneghini, M.; Santi, C. D.; Benazzi, D.; Besendorfer, S.; Pusche, R.; Derluyn, J.; Degroote, S.; Germain, M.; Kabouche, R.; Abid, I.; Meissner, E.; Zanoni, E.; Medjdoub, F.; Meneghesso, G.