GAO, ZHAN

GAO, ZHAN  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 20 di 22 (tempo di esecuzione: 0.047 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Analysis of trapping and detrapping mechanisms in 0.15 μm-gate AlGaN/GaN High Electron Mobility Transistors: explanation of dynamic behaviour of threshold voltage and on-resistance 2023 Francesco De PieriMirko FornasierZhan GaoFabiana RampazzoCarlo De SantiMatteo MeneghiniGaudenzio MeneghessoEnrico Zanoni - - Proceedings of ICNS-14
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier 2022 Gao Z.Chiocchetta F.De Santi C.Modolo N.Rampazzo F.Meneghini M.Meneghesso G.Zanoni E. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS Proceedings of 2022 IEEE International Reliability Physics Symposium (IRPS)
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications 2022 Z. GaoF. ChiocchettaM. FornasierM. SaroE. StramareA. TonelloC. SharmaN. ModoloC. De SantiF. RampazzoG. MeneghessoM. MeneghiniE. Zanoni + - - Proceedings of the 2022 International Workshop on Nitride Semiconductors
Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons 2020 Gao Z.Rampazzo F.Meneghini M.De Santi C.Chiocchetta F.Marcon D.Meneghesso G.Zanoni E. MICROELECTRONICS RELIABILITY - -
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 2019 Matteo MeneghiniCarlo De SantiAlessandro BarbatoMatteo BorgaEleonora CanatoFrancesca ChiocchettaElena FabrisZhan GaoFabrizio MasinKalparupa MukherjeeArianna NardoFabiana RampazzoMaria RuzzarinMehdi RzinAlaleh TajalliMarco BarbatoGaudenzio MeneghessoEnrico Zanoni - - Proceedings of the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13)
Dynamic Behavior of Threshold Voltage and ID–VDS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect 2023 Gao, ZhanDe Santi, CarloRampazzo, FabianaSaro, MarcoFornasier, MirkoMeneghesso, GaudenzioMeneghini, MatteoZanoni, Enrico + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Failure Physics and Reliability of GaN-Based HEMTs for Microwave and Millimeter-Wave Applications: A Review of Consolidated Data and Recent Results 2022 Zanoni, ERampazzo, FDe Santi, CGao, ZMeneghesso, GMeneghini, M + PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE - -
Harmonic generation in metal-insulator and metal-insulator-metal nanostructures 2019 Gao Z.De Ceglia D. + JOURNAL OF APPLIED PHYSICS - -
Hot-electron trapping and electric field redistribution in 0.15 µm RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier 2022 F. ChiocchettaZ. GaoM. FornasierN. ModoloC. De SantiF. RampazzoM. MeneghiniG. MeneghessoE. Zanoni - - Proceedings of the 2022 International Workshop on Nitride Semiconductors
Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress 2021 Gao Z.Rampazzo F.Meneghini M.Modolo N.De Santi C.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Investigation into trapping modes and threshold instabilities of state-of-art commercial GaN HEMTs 2019 Mukherjee K.De Santi C.Rzin M.Gao Z.Meneghesso G.Meneghini M.Zanoni E. MICROELECTRONICS RELIABILITY - -
Microstructural Degradation Investigations of OFF-State Stressed 0.15 um RF AlGaN/GaN HEMTs: Failure Mode related Breakdown 2021 Gao, Z.Rampazzo, FDe Santi, CMeneghesso, GZanoni, EMeneghini, M + - - 10.1109/WiPDA49284.2021.9645151
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability 2023 Zanoni, EnricoSanti, Carlo DeGao, ZhanBuffolo, MatteoFornasier, MirkoSaro, MarcoPieri, Francesco DeRampazzo, FabianaMeneghesso, GaudenzioMeneghini, Matteo + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Novel approach of combined planar and cross-sectional defect analysis of stressed normally-on HEMT devices with leaky Schottky gates 2023 Gao, ZhanRampazzo, F.Meneghini, M.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 2019 C. De SantiM. MeneghiniA. BarbatoM. BorgaE. CanatoF. ChiocchettaE. FabrisZ. GaoF. MasinK. MukherjeeA. NardoM. RuzzarinM. RzinA. TajalliG. MeneghessoE. Zanoni - - Proceedings of MATERIALS RESEARCH MEETING 2019 (MRM2019)
Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration 2019 Gao Z.Meneghini M.Rampazzo F.Rzin M.De Santi C.Meneghesso G.Zanoni E. MICROELECTRONICS RELIABILITY - -
Review on the degradation of GaN-based lateral power transistors 2021 De Santi, C.Buffolo, M.Caria, A.Chiocchetta, F.Favero, D.Fregolent, M.Masin, F.Modolo, N.Nardo, A.Piva, F.Rampazzo, F.Trivellin, N.Gao, Z.Meneghini, M.Zanoni, E.Meneghesso, G. + E-PRIME, ADVANCES IN ELECTRICAL ENGINEERING, ELECTRONICS AND ENERGY - -
Role of Carbon in dynamic effects and reliability of 0.15 um AlGaN/GaN HEMTs for RF power amplifiers 2022 De Santi, CZanoni, EMeneghini, MMeneghesso, GRampazzo, FGao, ZChiocchetta, F + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings Volume 12001, Gallium Nitride Materials and Devices XVII
Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs 2020 Gao Z.Meneghini M.Chiocchetta F.Rampazzo F.De Santi C.Meneghesso G.Zanoni E. + - - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Thermally-activated failure mechanisms of 0.25 μm RF AlGaN/GaN HEMTs submitted to long-term life tests 2023 Gao, ZChiocchetta, FRampazzo, FDe Santi, CFornasier, MMeneghesso, GMeneghini, MZanoni, E - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS Proceedings of the 2023 IEEE International Reliability Physics Symposium (IRPS 2023)