MUKHERJEE, KALPARUPA
MUKHERJEE, KALPARUPA
Dipartimento di Ingegneria dell'Informazione - DEI
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs
2020 Mukherjee, K.; Borga, M.; Ruzzarin, M.; De Santi, C.; Stoffels, S.; You, S.; Geens, K.; Liang, H.; Decoutere, S.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Challenges and perspectives for vertical gan-on-si trench mos reliability: From leakage current analysis to gate stack optimization
2021 Mukherjee, K.; De Santi, C.; Borga, M.; Geens, K.; You, S.; Bakeroot, B.; Decoutere, S.; Diehle, P.; Hubner, S.; Altmann, F.; Buffolo, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics
2022 Buffolo, M; Roccato, N; Piva, F; De Santi, C; Brescancin, R; Casu, C; Caria, A; Mukherjee, K; Haller, C; Carlin, Jf; Grandjean, N; Vallone, M; Tibaldi, A; Bertazzi, F; Goano, M; Verzellesi, G; Mosca, M; Meneghesso, G; Zanoni, E; Meneghini, M
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives
2019 Meneghini, Matteo; DE SANTI, Carlo; Barbato, Alessandro; Borga, Matteo; Canato, Eleonora; Chiocchetta, Francesca; Fabris, Elena; Gao, Zhan; Masin, Fabrizio; Mukherjee, Kalparupa; Nardo, Arianna; Rampazzo, Fabiana; Ruzzarin, Maria; Rzin, Mehdi; Tajalli, Alaleh; Barbato, Marco; Meneghesso, Gaudenzio; Zanoni, Enrico
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors
2020 Mukherjee, Kalparupa; De Santi, Carlo; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo; You, Shuzhen; Geens, Karen; Borga, Matteo; Bakeroot, Benoit; Decoutere, Stefaan
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors
2022 Favero, D.; De Santi, C.; Mukherjee, K.; Borga, M.; Geens, K.; Chatterjee, U.; Bakeroot, B.; Decoutere, S.; Rampazzo, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction
2020 Fabris, Elena; De Santi, Carlo; Caria, Alessandro; Mukherjee, Kalparupa; Nomoto, Kazuki; Hu, Zongyang; Li, Wenshen; Gao, Xiang; Marchand, Hugues; Jena, Debdeep; Xing, Huili Grace; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Investigation into trapping modes and threshold instabilities of state-of-art commercial GaN HEMTs
2019 Mukherjee, K.; De Santi, C.; Rzin, M.; Gao, Z.; Meneghesso, G.; Meneghini, M.; Zanoni, E.
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
2020 Borga, M.; Mukherjee, K.; De Santi, C.; Stoffels, S.; Geens, K.; You, S.; Bakeroot, B.; Decoutere, S.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics
2021 Roccato, N.; Piva, F.; Santi, C. D.; Brescancin, R.; Mukherjee, K.; Buffolo, M.; Haller, C.; Carlin, J. -F.; Grandjean, N.; Vallone, M.; Tibaldi, A.; Bertazzi, F.; Goano, M.; Verzellesi, G.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications
2019 De Santi, C.; Meneghini, M.; Barbato, A.; Borga, M.; Canato, E.; Chiocchetta, F.; Fabris, E.; Gao, Z.; Masin, F.; Mukherjee, K.; Nardo, A.; Ruzzarin, M.; Rzin, M.; Tajalli, A.; Meneghesso, G.; Zanoni, E.
Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices
2020 Diehle, P.; Hubner, S.; Santi, C. D.; Mukherjee, K.; Zanoni, E.; Meneghini, M.; Geens, K.; You, S.; Decoutere, S.; Altmann, F.
Study and characterization of GaN MOS capacitors: Planar vs trench topographies
2022 Mukherjee, K.; De Santi, C.; You, S.; Geens, K.; Borga, M.; Decoutere, S.; Bakeroot, B.; Diehle, P.; Altmann, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Threshold Voltage Variations in Semi-vertical GaN-on-Si FETs: A Comprehensive Study
2019 Mukherjee, Kalparupa; Borga, Matteo; Ruzzarin, Maria; Stoffels, Steve; Geens, Karen; Liang, Hu; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Understanding the leakage mechanisms and breakdown limits of vertical GaN-on-Si p+ n− n diodes: The road to reliable vertical MOSFETs
2021 Mukherjee, K.; De Santi, C.; Buffolo, M.; Borga, M.; You, S.; Geens, K.; Bakeroot, B.; Decoutere, S.; Gerosa, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Use of bilayer gate insulator in gan-on-si vertical trench mosfets: Impact on performance and reliability
2020 Mukherjee, K.; De Santi, C.; Borga, M.; You, S.; Geens, K.; Bakeroot, B.; Decoutere, S.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Vertical GaN devices: Process and reliability
2021 You, S.; Geens, K.; Borga, M.; Liang, H.; Hahn, H.; Fahle, D.; Heuken, M.; Mukherjee, K.; De Santi, C.; Meneghini, M.; Zanoni, E.; Berg, M.; Ramvall, P.; Kumar, A.; Bjork, M. T.; Ohlsson, B. J.; Decoutere, S.