MASIN, FABRIZIO

MASIN, FABRIZIO  

Università di Padova  

Mostra records
Risultati 1 - 8 di 8 (tempo di esecuzione: 0.068 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 2022 Modolo N.Fregolent M.Masin F.Benato A.Bettini A.Buffolo M.De Santi C.Borga M.Vogrig D.Neviani A.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs 2022 Masin F.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping 2019 Canato E.Meneghini M.Nardo A.Masin F.Barbato A.Barbato M.Zanoni E.Meneghesso G. + MICROELECTRONICS RELIABILITY - -
Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors 2018 MASIN, FABRIZIOMeneghini, MatteoZanoni, EnricoMeneghesso, Gaudenzio + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Non-monotonic threshold voltage variation in 4H-SiC metal-oxide-semiconductor field-effect transistor: Investigation and modeling 2021 Masin F.De Santi C.Meneghini M.Meneghesso G.Zanoni E. + JOURNAL OF APPLIED PHYSICS - -
OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution 2020 Canato E.Meneghini M.De Santi C.Masin F.Zanoni E.Meneghesso G. + MICROELECTRONICS RELIABILITY - -
Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress 2019 MASIN, FABRIZIOMeneghini M.Canato E.De Santi C.Zanoni E.Meneghesso G. + APPLIED PHYSICS LETTERS - -
Review on the degradation of GaN-based lateral power transistors 2021 De Santi, C.Buffolo, M.Caria, A.Chiocchetta, F.Favero, D.Fregolent, M.Masin, F.Modolo, N.Nardo, A.Piva, F.Rampazzo, F.Trivellin, N.Gao, Z.Meneghini, M.Zanoni, E.Meneghesso, G. + E-PRIME, ADVANCES IN ELECTRICAL ENGINEERING, ELECTRONICS AND ENERGY - -