MODOLO, NICOLA

MODOLO, NICOLA  

Università di Padova  

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Risultati 1 - 15 di 15 (tempo di esecuzione: 0.075 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects 2020 Modolo N.Meneghini M.Barbato A.Nardo A.De Santi C.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs 2020 Modolo, NicolaDe Santi, CarloMeneghini, Matteo + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs 2021 Modolo N.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + IEEE ELECTRON DEVICE LETTERS - -
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 2022 Modolo N.Fregolent M.Masin F.Benato A.Bettini A.Buffolo M.De Santi C.Borga M.Vogrig D.Neviani A.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices 2022 Modolo N.De Santi C.Bevilacqua A.Neviani A.Meneghesso G.Zanoni E.Meneghini M. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Cumulative Hot-Electron Trapping in GaN-Based Power HEMTs Observed by an Ultra-Fast (10V/ns) on-Wafer Methodology 2021 Modolo N.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS - -
Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs 2021 Minetto A.Modolo N.Meneghini M.Zanoni E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Hot electron effects in AlGaN/GaN HEMTs during hard-switching events 2021 Minetto A.Modolo N.Meneghini M.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Hot-Electron Effects in AlGaN/GaN HEMTs under Semi-ON DC Stress 2020 Modolo N.Nardo A.Meneghini M.Zanoni E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress 2021 Gao Z.Rampazzo F.Meneghini M.Modolo N.De Santi C.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation 2019 Modolo N.Meneghini M.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Review on the degradation of GaN-based lateral power transistors 2021 De Santi, C.Buffolo, M.Caria, A.Chiocchetta, F.Favero, D.Fregolent, M.Masin, F.Modolo, N.Nardo, A.Piva, F.Rampazzo, F.Trivellin, N.Gao, Z.Meneghini, M.Zanoni, E.Meneghesso, G. + E-PRIME, ADVANCES IN ELECTRICAL ENGINEERING, ELECTRONICS AND ENERGY - -
Trap-state mapping to model GaN transistors dynamic performance 2022 Modolo, NicolaDe Santi, CarloMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + SCIENTIFIC REPORTS - -
Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors 2020 Modolo N.De Santi C.Minetto A.Meneghesso G.Zanoni E.Meneghini M. + SEMICONDUCTOR SCIENCE AND TECHNOLOGY - -
Understanding γ-Ray Induced Instability in AlGaN/GaN HEMTs Using a Physics-Based Compact Model 2020 Modolo N.Meneghini M.Meneghesso G.Zanoni E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -