PACCAGNELLA, ALESSANDRO
 Distribuzione geografica
Continente #
NA - Nord America 29229
EU - Europa 2610
AS - Asia 1282
Continente sconosciuto - Info sul continente non disponibili 10
OC - Oceania 3
SA - Sud America 3
AF - Africa 1
Totale 33138
Nazione #
US - Stati Uniti d'America 29219
CN - Cina 1049
FI - Finlandia 589
IT - Italia 439
DE - Germania 419
SE - Svezia 390
IE - Irlanda 316
UA - Ucraina 284
VN - Vietnam 150
GB - Regno Unito 94
IN - India 34
FR - Francia 23
TR - Turchia 23
NL - Olanda 14
GR - Grecia 12
RU - Federazione Russa 11
CA - Canada 10
EU - Europa 10
JP - Giappone 9
ES - Italia 5
SG - Singapore 4
CH - Svizzera 3
IR - Iran 3
KR - Corea 3
RO - Romania 3
SI - Slovenia 3
AU - Australia 2
HK - Hong Kong 2
MY - Malesia 2
AR - Argentina 1
BE - Belgio 1
BG - Bulgaria 1
BR - Brasile 1
CL - Cile 1
DK - Danimarca 1
IQ - Iraq 1
JO - Giordania 1
MA - Marocco 1
MD - Moldavia 1
NO - Norvegia 1
NP - Nepal 1
NZ - Nuova Zelanda 1
Totale 33138
Città #
Fairfield 5549
Woodbridge 3839
Houston 3222
Ann Arbor 2667
Ashburn 1996
Seattle 1988
Cambridge 1945
Wilmington 1824
Chandler 1424
Jacksonville 1265
Princeton 628
San Diego 590
Medford 394
Roxbury 349
Des Moines 316
Dublin 312
Beijing 265
Nanjing 258
Boardman 222
Leesburg 201
Padova 191
Helsinki 173
Dong Ket 150
Shenyang 100
Hebei 80
Munich 78
Nanchang 61
Norwalk 56
Mestre 55
Jiaxing 52
Changsha 50
Indiana 49
Guangzhou 43
Venice 39
Tianjin 35
Jinan 26
Kharkiv 23
Borås 22
London 19
New York 19
Yenibosna 19
Redwood City 18
Falls Church 15
San Francisco 14
Zhengzhou 14
Ningbo 11
Redmond 11
Rockville 10
Duncan 9
Hangzhou 9
Philadelphia 8
Yellow Springs 8
Chicago 6
Milan 6
Washington 6
Auburn Hills 5
Bologna 5
Candelo 5
Haikou 5
Las Vegas 5
Geislingen an der Steige 4
Hanover 4
Hefei 4
Madrid 4
Nürnberg 4
Orange 4
Rome 4
Singapore 4
Taiyuan 4
Albino 3
Ardabil 3
Groningen 3
Istanbul 3
Kyoto 3
Mega 3
Oberentfelden 3
Spinea 3
Tomsk 3
Trieste 3
Berlin 2
Buffalo 2
Cadelbosco 2
Cassino 2
Castel Maggiore 2
Chiampo 2
Fremont 2
Fuzhou 2
Kowloon 2
Kunming 2
Kyle 2
Lanzhou 2
Los Angeles 2
Noisy-le-grand 2
North York 2
Occhiobello 2
Ocoee 2
Osaka 2
Pavia 2
Prato 2
Samara 2
Totale 30872
Nome #
Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 Dielectrics 510
Accelerated testing of RF-MEMS contact degradation through radiation sources 172
A Statistical Approach to Microdose Induced Degradation in FinFET Devices 168
Investigation of total ionizing dose effect and displacement damage in 65nm CMOS transistors exposed to 3MeV protons 164
Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs 144
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 143
Time decay of stress induced leakage current in thin gate oxides by low-field electron injection 138
Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs 133
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 132
Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip 127
Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution 125
Destructive events in NAND Flash memories irradiated with heavy ions 125
MOSFET drain current reduction under Fowler-Nordheim and channel hot carrier injection before gate oxide breakdown 123
Coadsorption optimization of DNA in binary self-assembled monolayer on gold electrode for electrochemical detection of oligonucleotide sequences 123
Fowler-Nordheim characteristics of electron irradiated MOS capacitors 119
Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions 118
Neutron-induced soft errors in advanced Flash memories 118
From Radiation Induced Leakage Current to soft-breakdown in irradiated MOS devices with ultra-thin gate oxide 117
Low-field current on thin oxides after constant current or radiation stresses 117
Impact of NBTI Aging on the Single Event Upset of SRAM Cells 115
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultra-High Doses 115
Degradation induced by X-ray Irradiation and Channel Hot Carrier Stresses in 130-nm NMOSFETs With Enclosed Layout 114
The on-orbit calibration of the Fermi Large Area Telescope 114
Can Atmospheric Neutrons Induce Soft Errors in NAND Floating Gate Memories? 113
LOW-COST ENZYME-BASED BIOSENSOR FOR LACTIC ACID AMPEROMETRIC DETECTION Electrical Modeling and Validation for Clinical and Food Processing Applications 113
Total-Ionizing-Dose Effects on InGaAs FinFETs with Modified Gate-stack 112
Using AFM related techniques for the nanoscale electrical characterization of irradiated ultrathin gate oxides 110
Error Instability in Floating Gate Flash Memories Exposed to TID 109
Radiation tolerance study of a commercial 65nm CMOS technology for high energy physics applications 108
Deep submicron CMOS technologies for the LHC experiments 107
The CMS experiment at the CERN LHC 107
Total dose dependence of radiation-induced leakage current in ultra-thin gate oxides 107
Evaluating the Impact of DfM Library Optimizations on Alpha-induced SEU Sensitivity in a Microprocessor Core 106
Possible effects on avionics induced by Terrestrial Gamma-Ray Flashes 106
Radiation damage on dielectrics: Single event effects 105
Alignment of the CMS silicon strip tracker during stand-alone commissioning 104
Angular dependence of heavy ion effects in Floating Gate memory arrays 104
Electrical Stresses on Ultra-Thin Gate Oxide SOI MOSFETs after Irradiation 104
Neutron-Induced Upsets in NAND Floating Gate Memories 104
Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3MeV proton irradiation 104
Effects of the Localization of the Charge in Nanocrystal Memory Cells 103
Increase in the Heavy-ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID 103
Time Decay of Stress Induced Leakage Current in Thin Gate Oxides by Low-Field Electron Injection 102
Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-Ray Irradiation 102
Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters 102
Recovery of Low Temperature Electron Trapping in AlGaAs/InGaAs PM-HEMTs due to Impact-Ionization 102
Retention Errors in 65-nm Floating Gate Cells After Exposure to Heavy Ions 102
Effects of implanted hydrogen on Pd2Si formation 102
Lactate Dehydrogenase and Glutamate Pyruvate Transaminase biosensing strategies for lactate detection on screen-printed sensors. Catalysis efficiency and interference analysis in complex matrices: from cell cultures to sport medicine 102
Electrochemical impedance spectroscopy study of the cells adhesion over microelectrodes array 101
Development of a complete plasmonic grating-based sensor and its application for self-assembled monolayer detection 101
Degradation of electron irradiated MOS capacitors 100
Logistic Modeling of Progressive Breakdown in Ultrathin Gate Oxides 100
The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors 100
Total Ionizing Dose Effects on 4Mbit Phase Change Memory Arrays 99
Gate Rupture in Ultra-Thin Gate Oxides Irradiated With Heavy Ions 99
Evidence of interface trap creation by hot electrons in AlGaAs/GaAs HEMT's 99
Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size Dependence 98
Radiation Induced Leakage Current and Stress Induced Leakage Current in Ultra-Thin Gate Oxides 98
Impact of Bias Temperature Instability on Soft Error Susceptibility 98
Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells 98
Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad 98
Radiation Sensitivity of Ohmic RF-MEMS Switches for Spatial Applications 98
Simulation of the time-dependent breakdown characteristics of heavy ion irradiated gate oxides using a mean-reverting poisson-gaussian process 97
Radiation-Induced Breakdown in 1.7 nm Oxynitrided Gate Oxides 97
Mechanical properties of ion implanted glasses 97
Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs: Impact of Bias Conditions During X-ray Exposure 97
On the Evaluation of Radiation-Induced Transient Faults in Flash-Based FPGAs 96
Key Contributions to the Cross Section of NAND Flash Memories Irradiated with Heavy Ions 96
Silicon diffusion in aluminium 96
Thin-film transistors with sputtered CdSe as semiconductor 96
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 96
Study of Neutron Damage in GaAs MESFETs 95
Drain Current Decrease in MOSFETs After Heavy Ion Irradiation 95
Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs 95
Peculiar characteristics of nanocrystal memory cells programming window 94
Radiation Effects in NAND Flash Memories 94
A new model of tunnelling current and SILC in ultra-thin oxides 94
Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells 94
Degradation of Static and Dynamic Behavior of CMOS Inverters during Constant and Pulsed Voltage Stress 93
Development of a disposable gold electrodes-based sensor for electrochemical measurements of cDNA hybridization 93
Heavy-Ion Induced Threshold Voltage Tails in Floating Gate Arrays 93
Degradation of Static and Dynamic Behavior of CMOS Inverters during Constant and Pulsed Voltage Stress 93
Total Ionizing Dose Effects in 3-D NAND Flash Memories 93
TID sensitivity of NAND Flash memory building blocks 93
The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays 91
FERMI LARGE AREA TELESCOPE OBSERVATIONS OF THE VELA PULSAR 91
Stand-alone cosmic muon reconstruction before installation of the CMS silicon strip tracker 91
Ion beam mixing at the Fe/SiO2 interface 91
Microdose and Breakdown Effects Induced by Heavy Ions on sub 20-nm Triple-Gate SOI FETs 90
Impact of Technology Scaling on the Heavy-Ion Upset Cross Section of Multi-Level Floating Gate Cells 90
Accelerated Wear-out of Ultra-thin Gate Oxides After Irradiation 90
Ionising radiation and electrical stress on nanocrystal memory cell array 90
Studies of GaAs–oxide interfaces with and without Si interlayer 90
Facility for fast neutron irradiation tests of electronics at the ISIS spallation neutron source 90
Angular Dependence of Heavy-Ion Induced Errors in Floating Gate Memories 89
Neutron induced damage in GaAs MESFETs 89
Performance studies of the CMS Strip Tracker before installation 89
MRS detectors with high gain for registration of weak visible and UV light fluxes 89
Heavy ion effects on configuration logic of Virtex FPGAs 89
Totale 10940
Categoria #
all - tutte 54490
article - articoli 36762
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 111
patent - brevetti 375
selected - selezionate 0
volume - volumi 1946
Totale 93684


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2017/2018552 0000 00 085 1084490
2018/20194064 24133317 717 15183 2974814691221
2019/20208477 1147250147683 865654 8841084 1131762554316
2020/20215002 306399300482 231358 233576 740365601411
2021/20226924 1407351306363 314279 341774 3081437571464
2022/20233024 87119698486 700586 870 0000
Totale 33368