PACCAGNELLA, ALESSANDRO
 Distribuzione geografica
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Continente #
NA - Nord America 31.119
EU - Europa 3.310
AS - Asia 1.497
Continente sconosciuto - Info sul continente non disponibili 10
SA - Sud America 9
OC - Oceania 4
AF - Africa 1
Totale 35.950
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Nazione #
US - Stati Uniti d'America 31.106
CN - Cina 1.224
FI - Finlandia 630
IT - Italia 619
IE - Irlanda 580
DE - Germania 435
SE - Svezia 397
UA - Ucraina 291
GB - Regno Unito 236
VN - Vietnam 152
FR - Francia 43
IN - India 43
TR - Turchia 25
NL - Olanda 20
CA - Canada 13
JP - Giappone 13
RU - Federazione Russa 13
GR - Grecia 12
EU - Europa 10
SG - Singapore 9
BR - Brasile 6
ES - Italia 6
KR - Corea 6
HK - Hong Kong 5
AT - Austria 4
RO - Romania 4
TW - Taiwan 4
CH - Svizzera 3
IR - Iran 3
MY - Malesia 3
PH - Filippine 3
SI - Slovenia 3
AU - Australia 2
BE - Belgio 2
MD - Moldavia 2
NP - Nepal 2
NZ - Nuova Zelanda 2
PL - Polonia 2
AM - Armenia 1
AR - Argentina 1
BG - Bulgaria 1
CL - Cile 1
DK - Danimarca 1
HR - Croazia 1
HU - Ungheria 1
IQ - Iraq 1
IS - Islanda 1
JO - Giordania 1
LT - Lituania 1
MA - Marocco 1
NO - Norvegia 1
PK - Pakistan 1
PY - Paraguay 1
RS - Serbia 1
TH - Thailandia 1
Totale 35.950
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Città #
Fairfield 5.598
Woodbridge 3.853
Houston 3.243
Ann Arbor 2.678
Ashburn 2.165
Seattle 2.018
Cambridge 1.963
Wilmington 1.833
Chandler 1.528
Jacksonville 1.276
Princeton 633
San Diego 594
Dublin 575
Medford 397
Roxbury 352
Des Moines 318
Beijing 314
Nanjing 261
Padova 225
Boardman 224
Helsinki 207
Leesburg 201
Dong Ket 150
Guangzhou 121
Shenyang 100
Hebei 81
Munich 78
London 71
New York 68
Nanchang 62
Norwalk 56
Mestre 55
Jiaxing 52
Changsha 50
Indiana 50
Venice 46
Shanghai 36
Tianjin 35
Ogden 30
Jinan 27
Milan 26
Perugia 25
Kharkiv 24
Borås 22
Kilburn 19
Yenibosna 19
Redwood City 18
Tappahannock 16
Falls Church 15
San Francisco 14
Zhengzhou 14
New Bedfont 11
Ningbo 11
Redmond 11
Rockville 10
Washington 10
Duncan 9
Hangzhou 9
Los Angeles 8
Philadelphia 8
Pune 8
Rome 8
Vicenza 8
Yellow Springs 8
Chicago 7
Chiswick 7
Hounslow 7
Marseille 7
Acton 6
Ravenna 6
Singapore 6
Southwark 6
Amsterdam 5
Auburn Hills 5
Bologna 5
Candelo 5
Edinburgh 5
Haikou 5
Las Vegas 5
Madrid 5
Pisa 5
Prescot 5
Wandsworth 5
Albino 4
Ferrara di Monte Baldo 4
Geislingen an der Steige 4
Hanover 4
Hefei 4
Istanbul 4
Lappeenranta 4
Nürnberg 4
Orange 4
Pavia 4
Taiyuan 4
Tokyo 4
Vienna 4
Ardabil 3
Buffalo 3
Groningen 3
Islington 3
Totale 32.126
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Nome #
Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 Dielectrics 550
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultra-High Doses 359
Accelerated testing of RF-MEMS contact degradation through radiation sources 178
A Statistical Approach to Microdose Induced Degradation in FinFET Devices 173
Investigation of total ionizing dose effect and displacement damage in 65nm CMOS transistors exposed to 3MeV protons 172
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 155
Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs 146
The CMS experiment at the CERN LHC 146
LOW-COST ENZYME-BASED BIOSENSOR FOR LACTIC ACID AMPEROMETRIC DETECTION Electrical Modeling and Validation for Clinical and Food Processing Applications 144
Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs 142
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 142
Time decay of stress induced leakage current in thin gate oxides by low-field electron injection 139
Destructive events in NAND Flash memories irradiated with heavy ions 132
Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip 132
Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution 131
Coadsorption optimization of DNA in binary self-assembled monolayer on gold electrode for electrochemical detection of oligonucleotide sequences 128
MOSFET drain current reduction under Fowler-Nordheim and channel hot carrier injection before gate oxide breakdown 127
Degradation induced by X-ray Irradiation and Channel Hot Carrier Stresses in 130-nm NMOSFETs With Enclosed Layout 125
The on-orbit calibration of the Fermi Large Area Telescope 123
Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions 122
Impact of NBTI Aging on the Single Event Upset of SRAM Cells 122
Low-field current on thin oxides after constant current or radiation stresses 122
Neutron-induced soft errors in advanced Flash memories 121
Fowler-Nordheim characteristics of electron irradiated MOS capacitors 121
From Radiation Induced Leakage Current to soft-breakdown in irradiated MOS devices with ultra-thin gate oxide 120
Can Atmospheric Neutrons Induce Soft Errors in NAND Floating Gate Memories? 119
Using AFM related techniques for the nanoscale electrical characterization of irradiated ultrathin gate oxides 117
Total-Ionizing-Dose Effects on InGaAs FinFETs with Modified Gate-stack 116
Deep submicron CMOS technologies for the LHC experiments 115
Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3MeV proton irradiation 115
Effects of the Localization of the Charge in Nanocrystal Memory Cells 114
Error Instability in Floating Gate Flash Memories Exposed to TID 114
Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-Ray Irradiation 113
Evaluating the Impact of DfM Library Optimizations on Alpha-induced SEU Sensitivity in a Microprocessor Core 113
Possible effects on avionics induced by Terrestrial Gamma-Ray Flashes 113
Increase in the Heavy-ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID 112
Radiation tolerance study of a commercial 65nm CMOS technology for high energy physics applications 112
Lactate Dehydrogenase and Glutamate Pyruvate Transaminase biosensing strategies for lactate detection on screen-printed sensors. Catalysis efficiency and interference analysis in complex matrices: from cell cultures to sport medicine 112
Alignment of the CMS silicon strip tracker during stand-alone commissioning 111
Angular dependence of heavy ion effects in Floating Gate memory arrays 110
Electrical Stresses on Ultra-Thin Gate Oxide SOI MOSFETs after Irradiation 110
Total dose dependence of radiation-induced leakage current in ultra-thin gate oxides 110
Effects of implanted hydrogen on Pd2Si formation 110
Neutron-Induced Upsets in NAND Floating Gate Memories 109
The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors 108
Development of a complete plasmonic grating-based sensor and its application for self-assembled monolayer detection 108
Radiation Sensitivity of Ohmic RF-MEMS Switches for Spatial Applications 107
Time Decay of Stress Induced Leakage Current in Thin Gate Oxides by Low-Field Electron Injection 106
Radiation damage on dielectrics: Single event effects 106
Recovery of Low Temperature Electron Trapping in AlGaAs/InGaAs PM-HEMTs due to Impact-Ionization 106
Retention Errors in 65-nm Floating Gate Cells After Exposure to Heavy Ions 106
On the Evaluation of Radiation-Induced Transient Faults in Flash-Based FPGAs 105
Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size Dependence 105
Key Contributions to the Cross Section of NAND Flash Memories Irradiated with Heavy Ions 105
A new model of tunnelling current and SILC in ultra-thin oxides 105
Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs 105
Degradation of electron irradiated MOS capacitors 104
Radiation-Induced Breakdown in 1.7 nm Oxynitrided Gate Oxides 104
Impact of Bias Temperature Instability on Soft Error Susceptibility 104
Electrochemical impedance spectroscopy study of the cells adhesion over microelectrodes array 104
Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs: Impact of Bias Conditions During X-ray Exposure 104
Logistic Modeling of Progressive Breakdown in Ultrathin Gate Oxides 103
Total Ionizing Dose Effects on 4Mbit Phase Change Memory Arrays 103
Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters 103
Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells 103
Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad 103
TID sensitivity of NAND Flash memory building blocks 103
Simulation of the time-dependent breakdown characteristics of heavy ion irradiated gate oxides using a mean-reverting poisson-gaussian process 102
Evidence of interface trap creation by hot electrons in AlGaAs/GaAs HEMT's 102
Gate Rupture in Ultra-Thin Gate Oxides Irradiated With Heavy Ions 101
Silicon diffusion in aluminium 101
Mechanical properties of ion implanted glasses 101
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 101
Study of Neutron Damage in GaAs MESFETs 100
Peculiar characteristics of nanocrystal memory cells programming window 100
Heavy-Ion Induced Threshold Voltage Tails in Floating Gate Arrays 100
The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays 99
Radiation Induced Leakage Current and Stress Induced Leakage Current in Ultra-Thin Gate Oxides 99
Thin-film transistors with sputtered CdSe as semiconductor 99
Radiation Effects in NAND Flash Memories 98
Accelerated Wear-out of Ultra-thin Gate Oxides After Irradiation 98
Degradation of Static and Dynamic Behavior of CMOS Inverters during Constant and Pulsed Voltage Stress 98
Visioni del Suono. Musica elettronica all'Università di Padova 98
Drain Current Decrease in MOSFETs After Heavy Ion Irradiation 97
Impact of Technology Scaling on the Heavy-Ion Upset Cross Section of Multi-Level Floating Gate Cells 97
Ion beam mixing at the Fe/SiO2 interface 97
Studies of GaAs–oxide interfaces with and without Si interlayer 97
Degradation of Static and Dynamic Behavior of CMOS Inverters during Constant and Pulsed Voltage Stress 96
Development of a disposable gold electrodes-based sensor for electrochemical measurements of cDNA hybridization 96
Total Ionizing Dose Effects in 3-D NAND Flash Memories 96
FERMI LARGE AREA TELESCOPE OBSERVATIONS OF THE VELA PULSAR 95
Stand-alone cosmic muon reconstruction before installation of the CMS silicon strip tracker 95
Effects of Total Ionizing Dose on the Retention of 41-nm NAND Flash Cells 95
Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses 95
A Novel Approach to Quantum Point Contact for Post Soft Breakdown Conduction 94
Degradation of Low Frequency Noise and DC characteristics on MOSFETs and its correlation with SILC 94
Angular Dependence of Heavy-Ion Induced Errors in Floating Gate Memories 94
Impact of Fowler-Nordheim and channel hot carrier stresses on MOSFETs with 2.2nm gate oxide 94
Ionising radiation and electrical stress on nanocrystal memory cell array 94
Proton-Induced Upsets in 41-nm NAND Floating Gate Cells 94
Totale 11.844
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Categoria #
all - tutte 116.983
article - articoli 80.390
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 256
patent - brevetti 773
selected - selezionate 0
volume - volumi 3.891
Totale 202.293
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20193.461 0 0 0 0 0 0 0 0 0 752 1.478 1.231
2019/20208.554 1.156 254 150 687 872 658 892 1.094 1.139 771 564 317
2020/20215.045 313 400 302 489 233 359 233 581 749 366 605 415
2021/20226.985 140 737 1.327 363 317 281 343 782 310 143 767 1.475
2022/20234.188 876 200 98 490 706 589 86 294 445 34 244 126
2023/20241.478 140 289 196 171 99 135 79 140 87 142 0 0
Totale 36.225