NAPOLITANI, ENRICO

NAPOLITANI, ENRICO  

Dipartimento di Fisica e Astronomia "Galileo Galilei" - DFA  

Mostra records
Risultati 1 - 20 di 194 (tempo di esecuzione: 0.025 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
A critical evaluation of Ag- A nd Ti-hyperdoped Si for Si-based infrared light detection 2021 Napolitani E. + JOURNAL OF APPLIED PHYSICS - -
A non-destructive approach for doping profiles characterization by micro-Raman spectroscopy: the case of B-implanted Ge 2014 SANSON, ANDREANAPOLITANI, ENRICOCARNERA, ALBERTO + JOURNAL OF RAMAN SPECTROSCOPY - -
Activation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling 2000 NAPOLITANI, ENRICOCARNERA, ALBERTO + MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING - -
Aluminium Implantation in Germanium: Uphill Diffusion, Electrical Activation, and Trapping 2012 NAPOLITANI, ENRICO + APPLIED PHYSICS EXPRESS - -
Anomalous transport of Sb in laser irradiated Ge 2012 NAPOLITANI, ENRICO + APPLIED PHYSICS LETTERS - -
Atom probe tomography of hyper-doped Ge layers synthesized by Sb in-diffusion by pulsed laser melting 2023 Carraro, ChiaraMaggioni, GianluigiDi Russo, EnricoDe Salvador, DavideNapolitani, Enrico + MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING - -
Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon 1999 NAPOLITANI, ENRICOCARNERA, ALBERTO + MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING - -
Atomistic Mechanism of Boron Diffusion in Silicon 2006 DE SALVADOR, DAVIDENAPOLITANI, ENRICOBISOGNIN, GABRIELECARNERA, ALBERTO + PHYSICAL REVIEW LETTERS - -
Atomistic modeling of FnVm complexes in pre-amorphized Si 2008 NAPOLITANI, ENRICO + MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY - -
B activation enhancement in submicron confined implants in Si 2005 Napolitani E. + APPLIED PHYSICS LETTERS - -
B clustering in amorphous Si 2008 DE SALVADOR, DAVIDEBISOGNIN, GABRIELEDI MARINO, MARCONAPOLITANI, ENRICOCARNERA, ALBERTO + JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B - -
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions 2006 DI MARINO, MARCONAPOLITANI, ENRICOMASTROMATTEO, MASSIMOBISOGNIN, GABRIELEDE SALVADOR, DAVIDECARNERA, ALBERTO + NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS - -
B-doping in Ge by excimer laser annealing 2013 NAPOLITANI, ENRICOMILAZZO, RUGGERO + JOURNAL OF APPLIED PHYSICS - -
Boron diffusion in extrinsically doped crystalline silicon 2010 DE SALVADOR, DAVIDENAPOLITANI, ENRICOBISOGNIN, GABRIELECARNERA, ALBERTO + PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS - -
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain 2004 BISOGNIN, GABRIELEDE SALVADOR, DAVIDENAPOLITANI, ENRICOBERTI, MARINACARNERA, ALBERTODRIGO, ANTONIO + MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY - -
Broad-area optical characterization of well-width homogeneity inGaN/AlxGa1-xN multiple quantum wells grown on sapphire wafers 2000 BERTI, MARINANAPOLITANI, ENRICODRIGO, ANTONIO + APPLIED PHYSICS LETTERS - -
C ion-implanted TiO2 thin film for photocatalytic applications 2015 NAPOLITANI, ENRICO + JOURNAL OF APPLIED PHYSICS - -
Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection 2002 DE SALVADOR, DAVIDENAPOLITANI, ENRICOBERTI, MARINADRIGO, ANTONIO + APPLIED PHYSICS. A, MATERIALS SCIENCE & PROCESSING - -
Carrier distribution in quantum nanostructures by scanning capacitance microscopy 2005 Napolitani E. + JOURNAL OF APPLIED PHYSICS - -
Carrier mobility and strain effect in heavily doped p-type Si 2006 BISOGNIN, GABRIELENAPOLITANI, ENRICODE SALVADOR, DAVIDE + MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY - -