PIEROBON, ROBERTO
 Distribuzione geografica
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Continente #
NA - Nord America 2.143
EU - Europa 1.101
AS - Asia 133
Continente sconosciuto - Info sul continente non disponibili 2
Totale 3.379
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Nazione #
US - Stati Uniti d'America 2.131
IT - Italia 883
CN - Cina 122
DE - Germania 48
UA - Ucraina 47
FI - Finlandia 45
FR - Francia 28
SE - Svezia 17
GB - Regno Unito 10
CA - Canada 7
MX - Messico 5
TR - Turchia 4
CH - Svizzera 3
IE - Irlanda 3
IN - India 3
PL - Polonia 3
RU - Federazione Russa 3
ES - Italia 2
EU - Europa 2
GR - Grecia 2
IR - Iran 2
SK - Slovacchia (Repubblica Slovacca) 2
AE - Emirati Arabi Uniti 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
MY - Malesia 1
NL - Olanda 1
NO - Norvegia 1
RO - Romania 1
Totale 3.379
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Città #
Woodbridge 296
Fairfield 261
Jacksonville 218
Ashburn 186
Houston 163
Ann Arbor 158
Chandler 142
Wilmington 121
Seattle 104
Cambridge 86
Milan 75
Rome 60
Beijing 48
Des Moines 42
Princeton 41
Naples 26
Medford 25
Nanjing 25
Padova 22
Genoa 19
San Diego 18
Napoli 16
Boardman 15
Helsinki 14
Redwood City 14
Bologna 13
Washington 13
Cagliari 10
Trieste 10
Jiaxing 9
Udine 9
Guangzhou 8
Hebei 8
Margherita Di Savoia 8
Pisa 8
Trento 8
Parma 7
Roxbury 7
Turin 7
Civitella Messer Raimondo 6
Florence 6
Salerno 6
Ciudad Nezahualcoyotl 5
Ferrara 5
Matera 5
Modena 5
Nanchang 5
Shenyang 5
Supino 5
Toronto 5
Acerra 4
Gorizia 4
Messina 4
Montebello Vicentino 4
Mugnano di Napoli 4
Norwalk 4
Paderno Dugnano 4
Segrate 4
Agropoli 3
Bari 3
Belpasso 3
Bussoleno 3
Capoterra 3
Cassolnovo 3
Catania 3
Cava de' Tirreni 3
Changsha 3
Cologno Monzese 3
Cosenza 3
Dublin 3
Figline Valdarno 3
Genova 3
Imperia 3
Indiana 3
Kharkiv 3
Lavagna 3
L’Aquila 3
Mereto Di Tomba 3
Oristano 3
Paris 3
Pescia 3
Saint-Genis-Laval 3
Torino 3
Yenibosna 3
Aosta 2
Avellino 2
Azzano Decimo 2
Bergamo 2
Bratislava 2
Camerino 2
Campi Bisenzio 2
Carpi 2
Castel San Giorgio 2
Centro 2
Chions 2
Chivasso 2
Comacchio 2
Como 2
Faella 2
Fisciano 2
Totale 2.520
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Nome #
Dall’evoluzione in vitro alle nanotecnologie: gli aptameri come biosensori 1.021
Analysis of hot carrier aging degradation in GaN MESFETs 151
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 146
Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors 145
Degradation mechanisms of GaN-based LEDs after accelerated DC current aging 138
Low Current Dispersion and Low Bias-Stress Degradation of Unpassivated GaN/AlGaN/GaN/SiC HEMTs 119
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 113
Hot carrier aging degradation phenomena in GaN based MESFETs 110
Temperature stability of Breakdown Voltage on SiC power Schottky diodes with different barrier heights 100
Surface Related Drain Current Dispersion Effects in AlGaN/GaN HEMTs 97
Performance Evaluation of a Schottky SiC Power Diode in a Boost PFC Application 95
Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm 93
A new combined process based on MWCNT spray deposition and atmospheric pressure plasma jet fixing for large scale production of transparent and flexible conductive coatings 86
Schottky SiC Diodes in Power Applications 81
Characterization of Schottky SiC Diodes for Power Applications 76
Temperature stability of Breakdown Voltage on SiC power Schottky diodes with different barrier heights 75
Defect diagnostics of degradation mechanisms of GaN-based LEDs after accelerated DC current ageing 68
Frequency transconductance and Gate-Lag dispersion in InAlAs/InGaAs/InP HEMTs 63
Unpassivated GaN/AlGaN/GaN HEMTs with very low DC to RF drain current dispersion 60
Experimental and Simulated Gate Lag Transients in Unpassivated GaN/AlGaN/GaN HEMTs 59
Method for generating an atmospheric plasma jet and atmospheric plasma minitorch device 58
Hot Electron stress on unpassivated GaN/AlGaN/GaN HEMTs 56
Reliability analysis of GaN-Based LEDs for solid state illumination 54
RF Frequency dispersion and frequency dependence of breakdown phenomena in InAlAs/InGaAs/InP HEMTs 50
Electrical characterization of inhomogeneous Ni2Si/SiC Schottky contacts 47
Reliability aspects of GaN microwave devices 46
Instabilities and degradation in GaN-based devices 46
Reliability aspects of GaN microwave devices 45
Current Collapse in AlGaN/GaN HEMT's analyzed by means of 2D device simulation 34
Schottky SiC Diodes in Power Switching Applications 32
Reliability analysis of Gan-Based LEDs for solid state illumination 28
Performance evaluation of a Shottcky SiC power diode in a boost PFC application 12
Totale 3.404
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Categoria #
all - tutte 8.469
article - articoli 3.444
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 152
selected - selezionate 0
volume - volumi 0
Totale 12.065
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019160 0 0 0 0 0 0 0 0 0 32 68 60
2019/2020743 93 9 9 173 57 59 39 70 64 73 44 53
2020/2021584 53 40 38 62 29 71 31 69 63 43 57 28
2021/2022426 16 62 39 32 26 40 29 40 23 5 47 67
2022/2023543 78 31 21 51 78 101 31 39 61 8 29 15
2023/2024410 24 21 38 40 55 93 46 42 33 18 0 0
Totale 3.404