PIEROBON, ROBERTO
 Distribuzione geografica
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Continente #
NA - Nord America 2.034
EU - Europa 891
AS - Asia 128
Continente sconosciuto - Info sul continente non disponibili 2
Totale 3.055
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Nazione #
US - Stati Uniti d'America 2.029
IT - Italia 683
CN - Cina 121
DE - Germania 47
UA - Ucraina 47
FI - Finlandia 45
FR - Francia 22
SE - Svezia 17
GB - Regno Unito 10
CA - Canada 5
BE - Belgio 3
IE - Irlanda 3
PL - Polonia 3
RU - Federazione Russa 3
TR - Turchia 3
ES - Italia 2
EU - Europa 2
GR - Grecia 2
IN - India 2
IR - Iran 2
SK - Slovacchia (Repubblica Slovacca) 2
DK - Danimarca 1
RO - Romania 1
Totale 3.055
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Città #
Woodbridge 296
Fairfield 261
Jacksonville 218
Houston 163
Ann Arbor 158
Chandler 142
Wilmington 121
Ashburn 111
Seattle 100
Cambridge 86
Rome 53
Beijing 47
Des Moines 42
Princeton 41
Milan 38
Medford 25
Nanjing 25
San Diego 18
Napoli 16
Boardman 15
Helsinki 14
Redwood City 14
Padova 13
Washington 13
Jiaxing 9
Genoa 8
Guangzhou 8
Hebei 8
Margherita Di Savoia 8
Pisa 8
Trento 8
Trieste 8
Udine 8
Parma 7
Roxbury 7
Civitella Messer Raimondo 6
Florence 6
Salerno 6
Bologna 5
Ferrara 5
Matera 5
Modena 5
Nanchang 5
Naples 5
Shenyang 5
Toronto 5
Acerra 4
Gorizia 4
Montebello Vicentino 4
Mugnano di Napoli 4
Norwalk 4
Paderno Dugnano 4
Segrate 4
Turin 4
Agropoli 3
Bari 3
Belpasso 3
Brussels 3
Bussoleno 3
Catania 3
Changsha 3
Cologno Monzese 3
Cosenza 3
Dublin 3
Figline Valdarno 3
Genova 3
Imperia 3
Indiana 3
Kharkiv 3
Mereto Di Tomba 3
Oristano 3
Pescia 3
Saint-Genis-Laval 3
Torino 3
Yenibosna 3
Avellino 2
Bratislava 2
Cagliari 2
Carpi 2
Castel San Giorgio 2
Centro 2
Chions 2
Chivasso 2
Comacchio 2
Como 2
Fisciano 2
Foggia 2
Fucecchio 2
Gragnano 2
Grumo Nevano 2
Hangzhou 2
Jinan 2
Lamezia Terme 2
Leawood 2
Lecce 2
Livorno 2
Londa 2
London 2
Lynn 2
Martina Franca 2
Totale 2.320
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Nome #
Dall’evoluzione in vitro alle nanotecnologie: gli aptameri come biosensori 801
Analysis of hot carrier aging degradation in GaN MESFETs 148
Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors 142
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 141
Degradation mechanisms of GaN-based LEDs after accelerated DC current aging 136
Low Current Dispersion and Low Bias-Stress Degradation of Unpassivated GaN/AlGaN/GaN/SiC HEMTs 116
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 111
Hot carrier aging degradation phenomena in GaN based MESFETs 99
Temperature stability of Breakdown Voltage on SiC power Schottky diodes with different barrier heights 98
Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm 93
Surface Related Drain Current Dispersion Effects in AlGaN/GaN HEMTs 90
Performance Evaluation of a Schottky SiC Power Diode in a Boost PFC Application 88
A new combined process based on MWCNT spray deposition and atmospheric pressure plasma jet fixing for large scale production of transparent and flexible conductive coatings 81
Schottky SiC Diodes in Power Applications 79
Temperature stability of Breakdown Voltage on SiC power Schottky diodes with different barrier heights 75
Characterization of Schottky SiC Diodes for Power Applications 70
Defect diagnostics of degradation mechanisms of GaN-based LEDs after accelerated DC current ageing 65
Unpassivated GaN/AlGaN/GaN HEMTs with very low DC to RF drain current dispersion 60
Frequency transconductance and Gate-Lag dispersion in InAlAs/InGaAs/InP HEMTs 58
Method for generating an atmospheric plasma jet and atmospheric plasma minitorch device 55
Experimental and Simulated Gate Lag Transients in Unpassivated GaN/AlGaN/GaN HEMTs 53
Reliability analysis of GaN-Based LEDs for solid state illumination 53
Hot Electron stress on unpassivated GaN/AlGaN/GaN HEMTs 52
RF Frequency dispersion and frequency dependence of breakdown phenomena in InAlAs/InGaAs/InP HEMTs 49
Reliability aspects of GaN microwave devices 45
Reliability aspects of GaN microwave devices 45
Electrical characterization of inhomogeneous Ni2Si/SiC Schottky contacts 43
Instabilities and degradation in GaN-based devices 41
Current Collapse in AlGaN/GaN HEMT's analyzed by means of 2D device simulation 30
Reliability analysis of Gan-Based LEDs for solid state illumination 27
Schottky SiC Diodes in Power Switching Applications 26
Performance evaluation of a Shottcky SiC power diode in a boost PFC application 10
Totale 3.080
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Categoria #
all - tutte 6.363
article - articoli 2.572
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 109
selected - selezionate 0
volume - volumi 0
Totale 9.044
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019249 0 0 46 1 4 0 2 26 10 32 68 60
2019/2020743 93 9 9 173 57 59 39 70 64 73 44 53
2020/2021584 53 40 38 62 29 71 31 69 63 43 57 28
2021/2022426 16 62 39 32 26 40 29 40 23 5 47 67
2022/2023545 78 31 21 51 78 101 31 39 62 8 29 16
2023/202484 24 21 39 0 0 0 0 0 0 0 0 0
Totale 3.080