PIEROBON, ROBERTO
 Distribuzione geografica
Continente #
NA - Nord America 2.146
EU - Europa 1.199
AS - Asia 150
Continente sconosciuto - Info sul continente non disponibili 2
Totale 3.497
Nazione #
US - Stati Uniti d'America 2.134
IT - Italia 980
CN - Cina 122
DE - Germania 48
UA - Ucraina 47
FI - Finlandia 45
FR - Francia 29
SE - Svezia 17
SG - Singapore 17
GB - Regno Unito 10
CA - Canada 7
MX - Messico 5
TR - Turchia 4
CH - Svizzera 3
IE - Irlanda 3
IN - India 3
PL - Polonia 3
RU - Federazione Russa 3
ES - Italia 2
EU - Europa 2
GR - Grecia 2
IR - Iran 2
SK - Slovacchia (Repubblica Slovacca) 2
AE - Emirati Arabi Uniti 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
MY - Malesia 1
NL - Olanda 1
NO - Norvegia 1
RO - Romania 1
Totale 3.497
Città #
Woodbridge 296
Fairfield 261
Jacksonville 218
Ashburn 186
Houston 163
Ann Arbor 158
Chandler 142
Wilmington 121
Seattle 104
Cambridge 86
Milan 82
Rome 66
Beijing 48
Des Moines 42
Princeton 41
Naples 28
Medford 25
Nanjing 25
Padova 24
Genoa 21
San Diego 18
Napoli 16
Boardman 15
Bologna 15
Helsinki 14
Redwood City 14
Washington 13
Parma 11
Cagliari 10
Singapore 10
Trieste 10
Florence 9
Jiaxing 9
Pisa 9
Turin 9
Udine 9
Guangzhou 8
Hebei 8
Margherita Di Savoia 8
Trento 8
Roxbury 7
Salerno 7
Civitella Messer Raimondo 6
Bari 5
Ciudad Nezahualcoyotl 5
Ferrara 5
Matera 5
Modena 5
Nanchang 5
Shenyang 5
Supino 5
Toronto 5
Acerra 4
Gorizia 4
Messina 4
Montebello Vicentino 4
Mugnano di Napoli 4
Norwalk 4
Paderno Dugnano 4
Paris 4
Reggio Emilia 4
Segrate 4
Seveso 4
Verona 4
Agropoli 3
Altopascio 3
Belpasso 3
Bergamo 3
Bronte 3
Bussoleno 3
Capoterra 3
Cassolnovo 3
Catania 3
Cava de' Tirreni 3
Changsha 3
Cologno Monzese 3
Cosenza 3
Dublin 3
Figline Valdarno 3
Genova 3
Imperia 3
Indiana 3
Kharkiv 3
Lavagna 3
L’Aquila 3
Mel 3
Mereto Di Tomba 3
Oristano 3
Pescia 3
Saint-Genis-Laval 3
Torino 3
Yenibosna 3
Aosta 2
Atrani 2
Avellino 2
Azzano Decimo 2
Bratislava 2
Camerino 2
Campi Bisenzio 2
Carpi 2
Totale 2.573
Nome #
Dall’evoluzione in vitro alle nanotecnologie: gli aptameri come biosensori 1.122
Analysis of hot carrier aging degradation in GaN MESFETs 152
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 146
Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors 145
Degradation mechanisms of GaN-based LEDs after accelerated DC current aging 138
Low Current Dispersion and Low Bias-Stress Degradation of Unpassivated GaN/AlGaN/GaN/SiC HEMTs 119
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 114
Hot carrier aging degradation phenomena in GaN based MESFETs 110
Temperature stability of Breakdown Voltage on SiC power Schottky diodes with different barrier heights 100
Surface Related Drain Current Dispersion Effects in AlGaN/GaN HEMTs 98
Performance Evaluation of a Schottky SiC Power Diode in a Boost PFC Application 96
Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nm 93
A new combined process based on MWCNT spray deposition and atmospheric pressure plasma jet fixing for large scale production of transparent and flexible conductive coatings 87
Schottky SiC Diodes in Power Applications 81
Characterization of Schottky SiC Diodes for Power Applications 77
Temperature stability of Breakdown Voltage on SiC power Schottky diodes with different barrier heights 76
Defect diagnostics of degradation mechanisms of GaN-based LEDs after accelerated DC current ageing 69
Frequency transconductance and Gate-Lag dispersion in InAlAs/InGaAs/InP HEMTs 63
Unpassivated GaN/AlGaN/GaN HEMTs with very low DC to RF drain current dispersion 60
Experimental and Simulated Gate Lag Transients in Unpassivated GaN/AlGaN/GaN HEMTs 59
Method for generating an atmospheric plasma jet and atmospheric plasma minitorch device 58
Hot Electron stress on unpassivated GaN/AlGaN/GaN HEMTs 57
Reliability analysis of GaN-Based LEDs for solid state illumination 55
RF Frequency dispersion and frequency dependence of breakdown phenomena in InAlAs/InGaAs/InP HEMTs 51
Electrical characterization of inhomogeneous Ni2Si/SiC Schottky contacts 48
Reliability aspects of GaN microwave devices 47
Instabilities and degradation in GaN-based devices 47
Reliability aspects of GaN microwave devices 46
Current Collapse in AlGaN/GaN HEMT's analyzed by means of 2D device simulation 35
Schottky SiC Diodes in Power Switching Applications 32
Reliability analysis of Gan-Based LEDs for solid state illumination 29
Performance evaluation of a Shottcky SiC power diode in a boost PFC application 12
Totale 3.522
Categoria #
all - tutte 8.976
article - articoli 3.673
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 161
selected - selezionate 0
volume - volumi 0
Totale 12.810


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201960 0 0 0 0 0 0 0 0 0 0 0 60
2019/2020743 93 9 9 173 57 59 39 70 64 73 44 53
2020/2021584 53 40 38 62 29 71 31 69 63 43 57 28
2021/2022426 16 62 39 32 26 40 29 40 23 5 47 67
2022/2023543 78 31 21 51 78 101 31 39 61 8 29 15
2023/2024528 24 21 38 40 55 93 46 42 33 20 82 34
Totale 3.522