MENEGHINI, MATTEO
 Distribuzione geografica
Continente #
NA - Nord America 556
EU - Europa 238
AS - Asia 75
AF - Africa 6
SA - Sud America 4
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 881
Nazione #
US - Stati Uniti d'America 550
IE - Irlanda 84
IT - Italia 62
FR - Francia 38
CN - Cina 23
DE - Germania 21
JP - Giappone 11
TW - Taiwan 11
HK - Hong Kong 10
IN - India 9
FI - Finlandia 8
AE - Emirati Arabi Uniti 5
CA - Canada 5
CH - Svizzera 5
NL - Olanda 5
ZA - Sudafrica 5
KR - Corea 4
AR - Argentina 3
AT - Austria 3
RU - Federazione Russa 3
CZ - Repubblica Ceca 2
SA - Arabia Saudita 2
SE - Svezia 2
SK - Slovacchia (Repubblica Slovacca) 2
AU - Australia 1
BR - Brasile 1
BZ - Belize 1
DK - Danimarca 1
EU - Europa 1
GB - Regno Unito 1
GR - Grecia 1
NG - Nigeria 1
Totale 881
Città #
Dublin 81
Ashburn 72
Fairfield 66
Santa Cruz 48
Houston 36
Padova 28
Seattle 27
Woodbridge 21
Ann Arbor 17
Cambridge 17
Des Moines 16
San Diego 15
Wilmington 15
Duncan 14
Buffalo 13
Helsinki 8
Beijing 7
Paris 7
Taipei 7
Chicago 6
Los Angeles 6
Council Bluffs 5
Hong Kong 5
Falkenstein 4
Muizenberg 4
Rome 4
Tappahannock 4
Bengaluru 3
Brüttisellen 3
Marseille 3
Milan 3
Ottawa 3
Raleigh 3
Anyang-si 2
Bologna 2
Bratislava 2
Cervignano 2
Clearwater 2
Dallas 2
Delhi 2
Guangzhou 2
Hefei 2
Hiratsuka 2
Lake Forest 2
Las Vegas 2
Magdeburg 2
New York 2
Olivos 2
Passau 2
Riva 2
Roermond 2
Saint Petersburg 2
Tempe 2
Toronto 2
Toyama 2
At Tuwal 1
Athens 1
Auburn 1
Boardman 1
Borås 1
Boulder 1
Büdelsdorf 1
Castrocielo 1
Catania 1
Cesena 1
Cheyenne 1
Chiampo 1
Chongqing 1
Cleveland 1
Créteil 1
Dieppe 1
Dulles 1
Falls Church 1
Fano 1
Foligno 1
Frankfurt Am Main 1
Greensboro 1
Grenoble 1
Göteborg 1
Harrogate 1
Henderson 1
Jaboatao dos Guararapes 1
Kaohsiung City 1
Kirkland 1
Kobe 1
Kolding 1
Kwai Chung 1
Landshut 1
Laurel 1
Lentini 1
Messina 1
Moscow 1
Munich 1
Napoli 1
Norwalk 1
Nuremberg 1
Olbersdorf 1
Oude Meer 1
Perugia 1
Phoenix 1
Totale 660
Nome #
Gate stability of GaN-Based HEMTs with P-Type Gate, file e14fb269-76f9-3de1-e053-1705fe0ac030 187
The 2018 GaN power electronics roadmap, file e14fb26f-91aa-3de1-e053-1705fe0ac030 123
Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias, file e14fb26c-c647-3de1-e053-1705fe0ac030 106
Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics, file e14fb26b-95cb-3de1-e053-1705fe0ac030 97
Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices, file d1ec4c6e-7de4-492c-8d52-8a1880be5419 83
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs, file e14fb26c-ba30-3de1-e053-1705fe0ac030 73
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices, file e14fb26c-bafa-3de1-e053-1705fe0ac030 68
Study and development of a fluorescence based sensor system for monitoring oxygen in wine production: The WOW project, file e14fb26e-b606-3de1-e053-1705fe0ac030 58
Technology and reliability of normally-off GaN HEMTs with p-type gate, file e14fb26e-f7f7-3de1-e053-1705fe0ac030 39
Analysis of the physical processes that limit the reliability of GaN-based optoelectronic devices, file e14fb26f-db81-3de1-e053-1705fe0ac030 31
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs, file e14fb26f-8bbd-3de1-e053-1705fe0ac030 18
Experimental and Numerical Analysis of Hole Emission Process from Carbon-Related Traps in GaN Buffer Layers, file e14fb26f-9897-3de1-e053-1705fe0ac030 10
How innovative light design can improve microalgae production, file e0419bf8-576d-4ca5-8631-8570ab77af0a 6
Gradual Degradation of InGaAs LEDs: Impact on Non-Radiative Lifetime and Extraction of Defect Characteristics, file e14fb270-4c23-3de1-e053-1705fe0ac030 4
Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias, file e14fb26c-a79f-3de1-e053-1705fe0ac030 3
Glass-ceramic composites for high-power white-light-emitting diodes, file e14fb26e-bf53-3de1-e053-1705fe0ac030 3
Degradation Mechanisms of GaN HEMTs with p-Type Gate under Forward Gate Bias Overstress, file e14fb26f-8625-3de1-e053-1705fe0ac030 3
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives, file cc36c89f-cf78-4227-bae3-cd9705d5a34e 1
Totale 913
Categoria #
all - tutte 3.116
article - articoli 2.908
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6.024


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201916 0 0 0 0 0 0 0 0 0 4 6 6
2019/202046 4 2 2 3 3 3 3 2 6 10 4 4
2020/2021122 2 7 11 12 4 5 9 14 15 12 23 8
2021/2022281 8 9 13 47 37 12 20 25 9 14 57 30
2022/2023306 11 6 52 37 17 24 54 35 30 10 22 8
2023/2024139 4 8 12 9 7 24 13 13 25 24 0 0
Totale 913