MENEGHINI, MATTEO
 Distribuzione geografica
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Continente #
NA - Nord America 36.819
EU - Europa 6.547
AS - Asia 2.873
SA - Sud America 30
Continente sconosciuto - Info sul continente non disponibili 15
OC - Oceania 14
AF - Africa 8
Totale 46.306
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Nazione #
US - Stati Uniti d'America 36.785
IE - Irlanda 2.004
CN - Cina 1.934
IT - Italia 1.902
FI - Finlandia 794
DE - Germania 524
GB - Regno Unito 352
SE - Svezia 344
VN - Vietnam 269
UA - Ucraina 240
IN - India 187
JP - Giappone 107
TW - Taiwan 106
FR - Francia 87
KR - Corea 83
HK - Hong Kong 78
BE - Belgio 55
NL - Olanda 50
SG - Singapore 41
RU - Federazione Russa 33
CH - Svizzera 29
CA - Canada 28
GR - Grecia 26
AT - Austria 21
BR - Brasile 18
RO - Romania 17
EU - Europa 11
ID - Indonesia 11
IL - Israele 11
PL - Polonia 11
SA - Arabia Saudita 10
DK - Danimarca 8
NZ - Nuova Zelanda 8
BG - Bulgaria 7
LT - Lituania 7
NO - Norvegia 7
TR - Turchia 7
AR - Argentina 6
AU - Australia 6
ES - Italia 6
BD - Bangladesh 5
MX - Messico 5
A2 - ???statistics.table.value.countryCode.A2??? 4
CY - Cipro 4
HR - Croazia 4
MA - Marocco 4
RS - Serbia 4
CO - Colombia 3
EE - Estonia 3
IR - Iran 3
MD - Moldavia 3
MY - Malesia 3
CZ - Repubblica Ceca 2
DZ - Algeria 2
NP - Nepal 2
PT - Portogallo 2
TH - Thailandia 2
AF - Afghanistan, Repubblica islamica di 1
BH - Bahrain 1
BN - Brunei Darussalam 1
CL - Cile 1
DO - Repubblica Dominicana 1
EC - Ecuador 1
EG - Egitto 1
HU - Ungheria 1
IM - Isola di Man 1
IQ - Iraq 1
KE - Kenya 1
KH - Cambogia 1
KZ - Kazakistan 1
ME - Montenegro 1
MO - Macao, regione amministrativa speciale della Cina 1
OM - Oman 1
PH - Filippine 1
PY - Paraguay 1
SI - Slovenia 1
SK - Slovacchia (Repubblica Slovacca) 1
UZ - Uzbekistan 1
Totale 46.306
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Città #
Fairfield 6.505
Woodbridge 4.635
Houston 3.541
Ann Arbor 2.850
Ashburn 2.838
Seattle 2.358
Chandler 2.247
Cambridge 2.155
Wilmington 2.027
Dublin 2.000
Jacksonville 933
Beijing 732
Princeton 726
Padova 703
Medford 629
San Diego 593
Des Moines 508
Helsinki 374
Nanjing 332
Boardman 286
Dong Ket 265
Leesburg 205
Roxbury 186
Guangzhou 158
New York 131
Nanchang 92
London 91
Shenyang 85
Hebei 74
Norwalk 73
Jiaxing 67
Pune 65
Shanghai 64
Washington 63
Tianjin 51
Munich 49
Changsha 42
Los Angeles 40
Jinan 39
Indiana 38
Milan 36
Hsinchu 33
Redwood City 33
Mumbai 32
Borås 30
Tappahannock 30
Kharkiv 29
Tokyo 27
Central 25
Kilburn 25
Ogden 24
Turin 24
Chicago 22
Zhengzhou 22
Parma 21
Pignone 21
Frankfurt am Main 19
Man Kok 19
Palermo 19
Rome 19
Cremona 18
Taipei 18
Ningbo 17
Arzignano 16
Paris 16
Phoenix 16
Prescot 16
Chiswick 15
Falls Church 15
Ghent 15
Hangzhou 15
Rockville 15
Sarcedo 15
Hounslow 14
Stuttgart 14
Lappeenranta 13
Modena 13
Thessaloniki 13
Azzano Decimo 12
Berlin 12
Bristol 12
Edinburgh 12
Mestre 12
Agordo 11
Bologna 11
Hong Kong 11
Hwaseong-si 11
Nürnberg 11
Seoul 11
Taichung 11
Zurich 11
Brussels 10
Cagliari 10
Grenoble 10
Kanpur 10
Patna 10
Vienna 10
Dongjak-gu 9
Fuzhou 9
Haikou 9
Totale 39.869
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Nome #
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs 510
Vertical stack reliability of GaN-on-Si buffers for low-voltage applications 505
Vertical GaN devices: Process and reliability 350
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 277
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs 233
Semi-Transparent Perovskite Solar Cells: Performance and Perspectives 191
Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices 190
A review of failure modes and mechanisms of GaN-based HEMT's 168
Degradation of AlGaN/GaN Schottky diodes on silicon: Role of defects at the AlGaN/GaN interface 167
An analysis of the compositional techniques in John Chowning's Stria 166
A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs 165
Accelerated life test of high brightness light emitting diodes 153
Analysis of DC Current Accelerated Life Tests of GaN LEDs Using a Weibull-Based Statistical Model 152
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 152
Study and development of a fluorescence based sensor system for monitoring oxygen in wine production: The WOW project 151
Analysis of the role of current in the degradation of InGaN-based laser diodes 147
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 146
Analysis of the physical processes responsible for the degradation of deep-ultraviolet light emitting diodes 145
Defect-related degradation of Deep-UV-LEDs 143
Implications of changes in the injection mechanisms on the low temperature electroluminescence in InGaN/GaN light emitting diodes 142
Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements 141
A study of Failure of GaN-based LEDs submitted to reverse-bias stress and ESD events 141
Influence of device self-heating on trap activation energy extraction 139
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 139
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process 139
ESD characterization of multi-chip RGB LEDs 137
Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes 137
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes 137
A study on the reverse-bias and ESD instabilities of InGaN-based green LEDs 137
Reliability analysis of InGaN Blu-Ray laser diode 136
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 136
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 136
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors 131
Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes 130
Adaptive multi-wavelength LED star simulator for space life studies 130
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction 130
Reliability aspects of GaN-HEMTs on composite substrates 129
Effects and exploitation of tunable white light for circadian rhythm and human-centric lighting 129
Degradation of High-Brightness Green LEDs Submitted to Reverse Electrical Stress 129
Reliability issues of Gallium Nitride High Electron Mobility Transistors 127
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs 126
Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs 125
"Hot-plugging" of LED modules: Electrical characterization and device degradation 125
Failure mechanisms of gallium nitride LEDs related with passivation 125
Analysis of the Diffusion Involved in the Degradation of InGaN-Based Laser Diodes 123
Extensive analysis of the degradation of phosphor-converted LEDs 122
Redistribution of multi-quantum well states induced by current stress in InxGa1-xN/GaN light-emitting diodes 122
A Review on the Reliability of GaN-based Laser Diodes 122
Defects in GaN-based LEDs: Impact on internal quantum efficiency and on reliability 121
Extensive analysis of the degradation of blu-ray laser diodes 119
Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs 119
Demonstration of avalanche capability in polarization-doped vertical GaN pn diodes: Study of walkout due to residual carbon concentration 118
High-temperature degradation of GaN LEDs related to passivation 117
Analysis of the mechanisms limiting the reliability of retrofit LED lamps 117
Towards high reliability GaN LEDs: Understanding the physical origin of gradual and catastrophic failure 117
High temperature electro-optical degradation of InGaN/GaN HBLEDs 115
A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes 115
Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3MeV proton irradiation 115
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 113
Analysis of the Reliability of AlGaN/GaN HEMTs Submitted to On-State Stress Based on Electroluminescence Investigation 113
Electroluminescence and Transmission Electron Microscopy Characterization of Reverse-Biased AlGaN/GaN Devices 112
Highly stable low noise / high power AlN/GaN-on-silicon double heterostructure HEMTs operating at 40 GHz 112
High-temperature failure of GaN LEDs related with passivation 111
Light, Bias, And Temperature Effects On Organic TFTs 110
GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues 109
Degradation physics of GaN-based lateral and vertical devices 109
Thermal and electrical investigation of the reverse bias degradation of silicon solar cells 108
Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions 108
Degradation mechanisms and lifetime of state-of-the-art green laser diodes 108
Reliability of blue-emitting Eu2+-doped phosphors for laser-lighting applications 108
The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors 108
Reliability of GaN high-electron-mobility transistors: State of the art and perspectives 108
Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors 107
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 107
GaN HEMT Reliability: From Time Dependent Gate Degradation to On-state Failure Mechanisms 106
Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate 106
Reliability and failure physics of GaN HEMT, MIS-HEMT and p-gate HEMTs for power switching applications: Parasitic effects and degradation due to deep level effects and time-dependent breakdown phenomena 106
High temperature instabilities of ohmic contacts on p-GaN 106
Stability and performance evaluation of high-brightness light-emitting diodes under DC and pulsed bias conditions 105
Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities 105
Reliability of deep-UV light-emitting diodes 104
Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells 104
Failure causes and mechanisms of retrofit LED lamps 104
Gallium nitride based HEMTs for power applications: High field trapping issues 104
First Reliability Demonstration of Sub-200-nm AlN/GaN-on-Silicon Double-Heterostructure HEMTs for Ka-Band Applications 104
Evidence for avalanche generation in reverse-biased InGaN LEDs 103
Electron and hole-related luminescence processes in gate injection transistors 102
Thermal stability analysis of High Brightness LED during high temperature and electrical aging 102
Defect-Related Degradation of AlGaN-Based UV-B LEDs 102
A review on the reliability of GaN-based LEDs 102
Field dependence of the carrier injection mechanisms in InGaN Quantum wells: Its effect on the luminescence properties of blue light emitting diodes 101
Performance degradation of high-brightness light emitting diodes under DC and pulsed bias 101
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 101
Laser-based lighting: Experimental analysis and perspectives 101
Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes 100
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs 100
Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes 100
Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate 100
Evidence of Hot-Electron Degradation in GaN-based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress 100
Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics 100
Totale 13.526
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Categoria #
all - tutte 164.061
article - articoli 86.553
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 273
selected - selezionate 0
volume - volumi 2.955
Totale 253.842
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20193.216 0 0 0 0 0 0 0 0 0 703 1.378 1.135
2019/20209.978 1.193 273 123 1.549 974 681 776 1.008 1.200 1.222 607 372
2020/20216.815 363 435 322 417 303 374 626 946 852 595 756 826
2021/20228.054 251 1.111 1.139 512 262 339 479 827 370 251 817 1.696
2022/20237.153 1.204 303 188 562 1.148 862 308 627 925 106 557 363
2023/20244.799 481 805 654 526 443 720 432 254 214 270 0 0
Totale 46.961