MENEGHINI, MATTEO

MENEGHINI, MATTEO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
"Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs" in III-Nitride Based Light Emitting Diodes and Applications 2013 MENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO - - Topics in Applied Physics III-Nitride Based Light Emitting Diodes and Applications
Chip-Level Degradation of InGaN-Based Optoelectronic Devices 2017 C. De SantiM. MeneghiniG. MeneghessoE. Zanoni - - Solid State Lighting Reliability Part 2: Components to Systems
Degradation mechanisms of InGaN visible LEDs and AlGaN UV LEDs 2021 De Santi C.Caria A.Piva F.Meneghesso G.Zanoni E.Meneghini M. - - Reliability of Semiconductor Lasers and Optoelectronic Devices
Electrical properties, reliability issues, and ESD robustness of InGaN-based LEDs 2017 Meneghini, M.Meneghesso, G.Zanoni, E. - - Topics in Applied Physics - III-Nitride Based Light Emitting Diodes and Applications
ESD Sensitivity of GaN-Based Electronic Devices 2015 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOZANONI, ENRICO - - Electrostatic Discharge Protection Advances and Applications
GaN-Based Lateral and Vertical Devices 2023 Meneghini M.De Santi C.Zanoni E.Meneghesso G. + - - Springer Handbook of Semiconductor Devices
Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities 2016 I. RossettoD. BisiC. De SantiA. StoccoG. MeneghessoE. ZanoniM. Meneghini - - Power GaN Devices: Materials, Applications and Reliability
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 2018 C. De SantiM. MeneghiniG. MeneghessoE. Zanoni + - - Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications
Recent results on the physical origin of the degradation of GaN-based LEDs and lasers 2011 MENEGHINI, MATTEOTRIVELLIN, NICOLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - SPIE Proceedings Vol. 7939, Gallium Nitride Materials and Devices
Reliability of GaN-Based Power Devices 2018 G. MeneghessoE. ZanoniM. MeneghiniM. RuzzarinI. Rossetto - - Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
Reliability of Ultraviolet Light-Emitting Diodes 2019 C. De SantiD. MontiDalapati, PradipM. MeneghiniG. MeneghessoE. Zanoni - - Solid State Lighting Technology and Application Series
Trapping and Degradation Mechanisms in GaN-Based HEMTs 2015 MENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO - - Gallium Nitride (GaN): Physics, Devices, and Technology