DANESIN, FRANCESCA

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DANESIN, FRANCESCA

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Characterization and Analysis of Trap-Related Effects in AlGaN-GaN HEMTs

2007 Faqir, M; Verzellesi, G; Fantini, F; Danesin, Francesca; Rampazzo, Fabiana; Meneghesso, Gaudenzio; Zanoni, Enrico; Cavallini, A; Castaldini, A; Labat, N; Dua, C.

Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors

2006 Danesin, Francesca; Zanon, Franco; Gerardin, Simone; Rampazzo, Fabiana; Meneghesso, Gaudenzio; Zanoni, Enrico; Paccagnella, Alessandro

Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields

2008 Tazzoli, Augusto; Meneghesso, Gaudenzio; Zanon, Franco; Danesin, Francesca; Zanoni, Enrico; Bove, P; Langer, R; Thorpe, J.

Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing

2009 Zanoni, Enrico; Danesin, Francesca; Meneghini, Matteo; Cetronio, A; Lanzieri, C; Peroni, M; Meneghesso, Gaudenzio

Mechanisms of RF current collapse in AlGaN-GaN high electron mobility transistors

2008 Faqir, M; Verzellesi, G; Chini, A; Fantini, F; Danesin, Francesca; Meneghesso, Gaudenzio; Zanoni, Enrico; Dua, C.

Reliability of GaN high-electron-mobility transistors: State of the art and perspectives

2008 Meneghesso, Gaudenzio; Verzellesi, G; Danesin, Francesca; Rampazzo, Fabiana; Zanon, Franco; Tazzoli, Augusto; Meneghini, Matteo; Zanoni, Enrico

Thermal storage effects on AlGaN/GaN HEMT

2008 Danesin, Francesca; Tazzoli, Augusto; Zanon, Franco; Meneghesso, Gaudenzio; Zanoni, Enrico; Cetronio, A; Lanzied, C; Lavanga, S; Peroni, M; Romanini, P.

Titolo	Data di pubblicazione	Autori	Rivista	Serie	Titolo libro
Characterization and Analysis of Trap-Related Effects in AlGaN-GaN HEMTs	2007	FAQIR MVERZELLESI GFANTINI FDANESIN, FRANCESCARAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICOCAVALLINI ACASTALDINI ALABAT NDUA C. + -	MICROELECTRONICS RELIABILITY	-	-
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors	2006	DANESIN, FRANCESCAZANON, FRANCOGERARDIN, SIMONERAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICOPACCAGNELLA, ALESSANDRO	MICROELECTRONICS RELIABILITY	-	-
Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields	2008	TAZZOLI, AUGUSTOMENEGHESSO, GAUDENZIOZANON, FRANCODANESIN, FRANCESCAZANONI, ENRICOBOVE PLANGER RTHORPE J. + -	MICROELECTRONICS RELIABILITY	-	-
Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing	2009	ZANONI, ENRICODANESIN, FRANCESCAMENEGHINI, MATTEOCETRONIO ALANZIERI CPERONI MMENEGHESSO, GAUDENZIO + -	IEEE ELECTRON DEVICE LETTERS	-	-
Mechanisms of RF current collapse in AlGaN-GaN high electron mobility transistors	2008	FAQIR MVERZELLESI GCHINI AFANTINI FDANESIN, FRANCESCAMENEGHESSO, GAUDENZIOZANONI, ENRICODUA C. + -	IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY	-	-
Reliability of GaN high-electron-mobility transistors: State of the art and perspectives	2008	MENEGHESSO, GAUDENZIOVERZELLESI GDANESIN, FRANCESCARAMPAZZO, FABIANAZANON, FRANCOTAZZOLI, AUGUSTOMENEGHINI, MATTEOZANONI, ENRICO + -	IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY	-	-
Thermal storage effects on AlGaN/GaN HEMT	2008	DANESIN, FRANCESCATAZZOLI, AUGUSTOZANON, FRANCOMENEGHESSO, GAUDENZIOZANONI, ENRICOCETRONIO ALANZIED CLAVANGA SPERONI MROMANINI P. + -	MICROELECTRONICS RELIABILITY	-	-