statistiche ricercatore

Nome	#
Total Ionizing Dose Effects in 130-nm commercial CMOS technologies for HEP experiments	174
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays	143
Degradation induced by X-ray Irradiation and Channel Hot Carrier Stresses in 130-nm NMOSFETs With Enclosed Layout	126
Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-Ray Irradiation	115
Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs: Impact of Bias Conditions During X-ray Exposure	106
Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs	105
The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays	102
Gate rupture in ultra-thin gate oxides irradiated with heavy ions	87
Single event gate rupture in 130-nm CMOS transistor arrays subjected to X-ray irradiation	84
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs	79
Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays	77
AGEING AND IONIZING RADIATION SYNERGETIC EFFECTS IN DEEP-SUBMICRON CMOS TECHNOLOGIES	47
Buffer-induced vertical leakage and charge trapping in normally-off GaN-on-Si HEMTs	34
A Novel System to Measure the Dynamic On‑Resistance of On‑Wafer 600 V Normally-Off GaN HEMTs in Real Application Conditions	27
Totale	1.306

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2019/2020	249	0	0	0	45	26	31	29	34	35	27	14	8
2020/2021	156	9	11	12	8	7	12	5	24	20	13	26	9
2021/2022	189	4	26	30	18	1	5	8	26	2	3	24	42
2022/2023	155	25	2	1	13	32	18	1	24	21	0	15	3
2023/2024	88	2	9	10	4	5	16	3	15	5	8	6	5
2024/2025	13	1	3	8	1	0	0	0	0	0	0	0	0
Totale													1.306