SILVESTRI, MARCO

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SILVESTRI, MARCO

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Risultati 1 - 7 di 7 (tempo di esecuzione: 0.008 secondi).

Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs

2008 Silvestri, Marco; Gerardin, Simone; Paccagnella, Alessandro; Faccio, F; Gonella, L.

Degradation induced by X-ray Irradiation and Channel Hot Carrier Stresses in 130-nm NMOSFETs With Enclosed Layout

2008 Silvestri, Marco; Gerardin, Simone; Paccagnella, Alessandro; Faccio, F.

Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays

2009 Griffoni, Alessio; Silvestri, Marco; Gerardin, Simone; Meneghesso, Gaudenzio; Paccagnella, Alessandro; Kaczer, B; DE TEN BROECK, Md; Verbeeck, R; Nackaerts, A.

Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs

2014 Rossetto, Isabella; Rampazzo, Fabiana; Meneghini, Matteo; Silvestri, Marco; C., Dua; P., Gamarra; R., Aubry; M. . ., A.; O., Patard; S. L., Delage; Meneghesso, Gaudenzio; Zanoni, Enrico

Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-Ray Irradiation

2010 Silvestri, Marco; Gerardin, Simone; Faccio, F; Paccagnella, Alessandro

The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays

2009 Silvestri, Marco; Gerardin, Simone; Schrimpf, Rd; Fleetwood, Dm; Faccio, F; Paccagnella, Alessandro

Total Ionizing Dose Effects in 130-nm commercial CMOS technologies for HEP experiments

2007 Gonella, L; Faccio, F; Silvestri, Marco; Gerardin, Simone; Pantano, D; Re, V; Marighisoni, M; Ratti, L; Ranieri, A.

Titolo	Data di pubblicazione	Autori	Rivista	Serie	Titolo libro
Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs	2008	SILVESTRI, MARCOGERARDIN, SIMONEPACCAGNELLA, ALESSANDROFACCIO FGONELLA L. + -	IEEE TRANSACTIONS ON NUCLEAR SCIENCE	-	-
Degradation induced by X-ray Irradiation and Channel Hot Carrier Stresses in 130-nm NMOSFETs With Enclosed Layout	2008	SILVESTRI, MARCOGERARDIN, SIMONEPACCAGNELLA, ALESSANDROFACCIO F. + -	IEEE TRANSACTIONS ON NUCLEAR SCIENCE	-	-
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays	2009	GRIFFONI, ALESSIOSILVESTRI, MARCOGERARDIN, SIMONEMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDROKACZER BDE TEN BROECK MDVERBEECK RNACKAERTS A. + -	IEEE TRANSACTIONS ON NUCLEAR SCIENCE	-	-
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs	2014	ROSSETTO, ISABELLARAMPAZZO, FABIANAMENEGHINI, MATTEOSILVESTRI, MARCOC. DuaP. GamarraR. AubryM. . . A.O. PatardS. L. DelageMENEGHESSO, GAUDENZIOZANONI, ENRICO + -	MICROELECTRONICS RELIABILITY	-	-
Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-Ray Irradiation	2010	SILVESTRI, MARCOGERARDIN, SIMONEFACCIO FPACCAGNELLA, ALESSANDRO + -	IEEE TRANSACTIONS ON NUCLEAR SCIENCE	-	-
The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays	2009	SILVESTRI, MARCOGERARDIN, SIMONESCHRIMPF RDFLEETWOOD DMFACCIO FPACCAGNELLA, ALESSANDRO + -	IEEE TRANSACTIONS ON NUCLEAR SCIENCE	-	-
Total Ionizing Dose Effects in 130-nm commercial CMOS technologies for HEP experiments	2007	GONELLA LFACCIO FSILVESTRI, MARCOGERARDIN, SIMONEPANTANO DRE VMARIGHISONI MRATTI LRANIERI A. + -	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT	-	-