Distribuzione geografica
Continente #
NA - Nord America 5237
EU - Europa 642
AS - Asia 427
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
SA - Sud America 1
Totale 6309
Nazione #
US - Stati Uniti d'America 5095
CN - Cina 281
DE - Germania 220
CA - Canada 142
FI - Finlandia 135
VN - Vietnam 132
UA - Ucraina 110
GB - Regno Unito 90
SE - Svezia 48
IT - Italia 28
IN - India 6
RU - Federazione Russa 6
NL - Olanda 4
TW - Taiwan 4
TR - Turchia 2
AT - Austria 1
AU - Australia 1
BR - Brasile 1
EU - Europa 1
HK - Hong Kong 1
KR - Corea 1
Totale 6309
Città #
Fairfield 807
Woodbridge 683
Jacksonville 667
Ann Arbor 594
Houston 594
Wilmington 326
Seattle 314
Ashburn 266
Cambridge 227
Montréal 139
Dong Ket 132
Munich 128
Princeton 120
Mcallen 110
Roxbury 94
Nanjing 84
Beijing 78
Medford 73
San Diego 65
Helsinki 39
Norwalk 21
Shenyang 20
Hebei 19
Jiaxing 19
Nanchang 19
Redwood City 14
Chandler 13
Indiana 13
Changsha 10
Padova 10
Mestre 9
Guangzhou 7
Tianjin 6
Jinan 5
Zhengzhou 5
San Francisco 4
Taipei 4
New York 3
Rockville 3
Borås 2
Ningbo 2
Venice 2
Yenibosna 2
Bexhill 1
Canberra 1
Columbus 1
Darmstadt 1
Des Moines 1
Groningen 1
Haikou 1
Hangzhou 1
Hanover 1
Kunming 1
Lanzhou 1
London 1
Milan 1
Monmouth Junction 1
Redmond 1
Rome 1
Shanghai 1
Southall 1
Southend 1
São Paulo 1
Walnut 1
Yellow Springs 1
Totale 5774
Nome #
Three terminal Breakdown evaluation in GaN-HEMT 473
Accelerated testing of RF-MEMS contact degradation through radiation sources 166
A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs 156
A review of failure modes and mechanisms of GaN-based HEMT's 152
Experimental Investigation on the Exploitation of an Active Mechanism to Restore the Operability of Malfunctioning RF-MEMS Switches 138
A study of Failure of GaN-based LEDs submitted to reverse-bias stress and ESD events 137
A study on the reverse-bias and ESD instabilities of InGaN-based green LEDs 130
A novel fast and versatile temperature measurement system for LDMOS transistors 127
Reliability aspects of GaN-HEMTs on composite substrates 121
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot electron stress 117
Reliability issues of Gallium Nitride High Electron Mobility Transistors 115
Thermal storage effects on AlGaN/GaN HEMT 110
Reliability analysis of AlGaN/GaN HEMT on SopSiC composite substrate under long-term DC-life test 105
Development of a New High Holding Voltage SCR-based ESD Protection Structure 104
Enhancement of RF-MEMS switch reliability through an active anti-stiction heat-based mechanism 102
Light, Bias, And Temperature Effects On Organic TFTs 102
Time-To-Latch-Up investigation of SCR devices as ESD protection structures on 65 nm technology platform 100
Reliability of GaN high-electron-mobility transistors: State of the art and perspectives 99
Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields 91
Radiation Sensitivity of Ohmic RF-MEMS Switches for Spatial Applications 90
Organic TFT with SiO2-Parylene Gate Dielectric Stack and Optimized Pentacene Growth Temperature 84
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 84
Study of the actuation speed, bounces occurrences, and contact reliability of ohmic RF-MEMS switches 84
Development of ESD protection structures for BULK and SOI BCD6 technology 82
Improved Reliability of Organic Light-Emitting Diodes with Indium-Zinc-Oxide Anode Contact 80
Electrostatic discharge effects in ultrathin gate oxide MOSFETs 80
Soft and Hard Failures of InGaN-Based LEDs Submitted to Electrostatic Discharge Testing 80
ESD sensitivity of a GaAs MMIC microwave power amplifier 78
Acceleration of Microwelding on Ohmic RF-MEMS Switches 76
K-band capacitive MEMS switches on GaAs substrate: Design, fabrication, and reliability 76
Design and Characterization of an Active Recovering Mechanism for High Performance RF MEMS Redundancy Switches 75
Reliability issues in RF-MEMS switches submitted to cycling and ESD test 74
Holding voltage investigation of advanced SCR-based protection structures for CMOS technology 73
Threshold Voltage Instability in Organic TFT with SiO2 and SiO2/Parylene-Stack Dielectrics 72
Breakdown characterization of gate oxides in 35 and 70 angstrom BCD8 smart power technology 70
ESD induced damage on ultra-thin gate oxide MOSFETs and its impact on device reliability 70
Electrostatic Discharge and Cycling effects on Ohmic and capacitive RF-MEMS Switches 68
A comprehensive study of MEMS behavior under EOS/ESD events: Breakdown characterization, dielectric charging, and realistic cures 68
An active heat-based restoring mechanism for improving the reliability of RF-MEMS switches 66
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 64
Impact of Trapped Charge and Interface Defects on the Degradation of the Optical and Electrical Characteristics in NPD/Alq3 OLEDs 60
Stiction Induced by Dielectric Breakdown on rf-MEMS Switches 58
Reliability Issues of GaN-Based High Electron Mobility Transistors 58
Factors limiting the High Brightness InGaN LEDs performance at high injection current bias 56
Evolution of Electrical Parameters of Dielectric-less Ohmic RF-MEMS Switches during Continuous Actuation Stress 56
ESD Robustness of AlGaN/GaN HEMT Devices 52
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide 51
Reliability Issues in GaN HEMTs related to traps and gate leakage current 49
GaN Hemt Degradation induced by Reverse Gate Bias Stress 47
Modeling and characterization of a circular-shaped energy scavenger in MEMS surface micromachining technology 47
Impact of Continuous Actuation on the Reliability of Dielectric-less Ohmic RF-MEMS Switches 46
Analysis of DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors based on pulsed measurements and spectroscopic techniques 46
Charge Trapping in Organic Thin Film Transistors 46
Degradation of GaN HEMT at high drain voltages 45
Novel 190V LIGBT-based ESD protection for 0.35μm Smart Power technology realized on SOI substrate 44
Design of mm-wave 5-bit phase shifters for Phased Array Antennas 43
Electro-Mechanical Characterization of the Dynamic Behavior of Ohmic RF MEMS Switches 43
Analysis of triggering behavior of low voltage BCD single and multi-finger gc-NMOS ESD protection devices 43
Parasitic Effects in GaN HEMTs and Related Characterization Methods 42
Electrostatic discharge sensitivity in InGaN-based Light Emitting Diodes 42
Suspensions Shape Impact on the Reliability of RF-MEMS Redundancy Switches 42
Transmission line pulse (TLP) testing of radio frequency (RF) micro-machined micro-electromechanical systems (MEMS) switches 42
Experimental Investigation of an Embedded Heating Mechanism to Improve RF-MEMS Switches Reliability 41
Active Recovering Mechanism for High Performance RF MEMS Redundancy Switches 41
High Voltage Electrical Characterization of Field-Plate Gate HEMT Devices 41
An Insight into effects Induced by Heavy-Ion Strikes in SCR ESD Protection Structures 38
Failure mechanisms of GaN-based transistors in on- and off-state 37
CDM circuit simulation of a HV Operational Amplifier realized in 0.35μm Smart Power technology 37
Electrostatic Discharge Effects In Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques 36
New Issues on Characterization and Reliability of MEMS Switches 36
New reliability understanding on GaN-HEMTs 36
Resistive RF-MEMS Switches Characterization and Reliability 35
Long Term Actuation Issues of Ohmic RF-MEMS Switches 34
Trap related instabilities and localized damages induced by reverse bias” 34
Traps characterization in Si-doped GaN/AlGaN/GaN HEMT on SiC by means of low frequency techniques 34
Reverse-bias and ESD instabilities of InGaN-based LEDs 33
A Positive Exploitation of ESD Events: Micro-welding Induction on Ohmic MEMS Contacts 32
Influence of Geometrical Parameters on Time-to-Latch-Up of SCR-Based ESD Protection Structures 32
Breakdown Investigation on AlGaN/GaN-HEMT Devices 31
Characterization Issues and ESD Sensitivity of RF-MEMS Switches 30
Characterization Issues and Charge Trapping Effects on RF-MEMS switches 29
Reliability of RF-MEMS for high frequency applications 29
A Comprehensive Study of MEMS Behavior under EOS/ESD Events: Breakdown, Dielectric Charging, and Realistic Cures 29
Light emission in GaN HEMTs: a powerful characterization and reliability tool 29
Passivation degradation induced by thermal storage on AlGaN/GaN HEMTs 27
ESD Sensitivity of 65nm Fully Depleted SOI MOSFETs with Different Strain-Inducing Techniques 26
Indium Zinc Oxide as an alternative to Indium Tin Oxide in OLEDs Technology 26
EOS/ESD Sensitivity of Functional rf-MEMS Switches 26
Reliability of RF-MEMS 26
High power performances of GaN HEMT on SopSiC substrate 26
EOS/ESD Sensitivity of Phase-Change-Memories 25
Reverse gate bias stress induced degradation of GaN HEMT 25
Long-term stability of Gallium Nitride High Electron Mobility Transistors: a reliability physics approach 22
RF-MEMS Switches Reliability for Long Term Spatial Applications 17
Evidence of protons induced contact degradation on ohmic RF-MEMS switches 15
Design of mm-wave 5-bit phase shifters for Satellite On The Move terminals 14
Totale 6326
Categoria #
all - tutte 8182
article - articoli 2635
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 10817

Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2017/201868 0003 10 12 00610
2018/2019638 811240 20 370 996175150
2019/20201937 2302713365 174147 141213 184181141121
2020/20211313 8412654121 70130 71128 15288115174
2021/2022955 2216512655 1343 3787 2410146227
2022/2023173 1591310 00 00 0000
Totale 6326