MASTROMATTEO, MASSIMO
 Distribuzione geografica
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Continente #
NA - Nord America 1.503
EU - Europa 123
AS - Asia 73
OC - Oceania 2
AF - Africa 1
Totale 1.702
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Nazione #
US - Stati Uniti d'America 1.502
CN - Cina 71
IT - Italia 35
FI - Finlandia 33
UA - Ucraina 15
DE - Germania 14
SE - Svezia 9
IE - Irlanda 7
GB - Regno Unito 6
AU - Australia 2
CH - Svizzera 2
IN - India 2
CA - Canada 1
HU - Ungheria 1
PL - Polonia 1
ZA - Sudafrica 1
Totale 1.702
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Città #
Fairfield 302
Woodbridge 175
Houston 138
Ashburn 112
Seattle 108
Wilmington 101
Cambridge 98
Chandler 97
Ann Arbor 89
Jacksonville 52
San Diego 36
Princeton 30
Beijing 27
Padova 19
Des Moines 14
Medford 14
Nanjing 13
Helsinki 11
Boardman 8
Guangzhou 8
Dublin 7
Cagliari 6
Shenyang 5
Hebei 4
Indiana 4
Norwalk 4
Roxbury 4
Jiaxing 3
Chieti 2
Geneva 2
Kilburn 2
London 2
Nanchang 2
San Jose 2
Shanghai 2
Bengaluru 1
Bologna 1
Chongqing 1
Dalmine 1
Geislingen an der Steige 1
Greenwich 1
Hangzhou 1
Hounslow 1
Jinan 1
Johannesburg 1
Kharkiv 1
Lappeenranta 1
Milan 1
Munich 1
New York 1
Ogden 1
Oshawa 1
Perth 1
Pune 1
Redwood City 1
San Francisco 1
Simi Valley 1
Tappahannock 1
Tianjin 1
Verona 1
Warsaw 1
Totale 1.529
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Nome #
Thermodynamic stability of high phosphorus concentration in silicon nanostructures 109
Mechanism of B diffusion in crystalline Ge under proton irradiation 108
Quantification of phosphorus diffusion and incorporation in silicon nanocrystals embedded in silicon oxide 98
Radiation enhanced diffusion of B in crystalline Ge 97
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions 93
Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial regrowth of amorphous Si 84
Self-interstitials injection in crystalline Ge induced by GeO2 nanoclusters 83
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si 82
Role of self-interstitials on B diffusion in Ge 82
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution 82
Oxygen behavior in germanium during melting laser thermal annealing 80
N-type doping of Ge by As implantation and excimer laser annealing 79
(Invited) Challenges and Opportunities for Doping Control in Ge for Micro and Optoelectronics Applications 78
Modeling of Hydrogen Diffusion And Segregation in Amorphous Silicon During Solid Phase Epitaxy 77
Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si 73
Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge 71
Hydrogen diffusion and segregation during solid phase epitaxial regrowth of preamorphized Si 69
Synthesis and characterization of P delta-layer in SiO2 by monolayer doping 67
Modeling of phosphorus diffusion in silicon oxide and incorporation in silicon nanocrystals 66
Role of ion mass on damage accumulation during ion implantation in Ge 57
Recent Insights in the Diffusion of Boron in Silicon and Germanium 46
Mechanism of fluorine redistribution and incorporation during solid phase epitaxial regrowth of pre-amorphized silicon 37
Totale 1.718
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Categoria #
all - tutte 5.988
article - articoli 5.075
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 11.063
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019193 0 0 0 0 0 0 0 0 0 42 81 70
2019/2020393 60 17 6 21 46 34 41 46 44 44 17 17
2020/2021272 9 18 5 16 13 62 6 21 49 21 32 20
2021/2022323 22 23 72 18 7 24 16 32 15 8 39 47
2022/2023224 34 7 4 20 48 29 1 24 38 4 12 3
2023/202462 5 15 9 9 6 4 3 6 2 3 0 0
Totale 1.718