ROCCATO, NICOLA
 Distribuzione geografica
Continente #
EU - Europa 207
NA - Nord America 188
AS - Asia 72
Totale 467
Nazione #
US - Stati Uniti d'America 188
IT - Italia 165
CN - Cina 24
JP - Giappone 14
KR - Corea 13
SG - Singapore 13
DE - Germania 11
FI - Finlandia 9
GB - Regno Unito 7
IN - India 7
CH - Svizzera 5
HU - Ungheria 3
FR - Francia 2
IE - Irlanda 2
GR - Grecia 1
SE - Svezia 1
TW - Taiwan 1
UA - Ucraina 1
Totale 467
Città #
Padova 119
Ashburn 53
Chandler 21
Beijing 20
New York 16
Turin 12
Singapore 10
Tokyo 8
Milan 7
Washington 7
Helsinki 6
Los Angeles 6
Suwon 6
Fairfield 5
New Delhi 5
Ube 5
Treviso 4
Yongin-si 4
Berlin 3
Budapest 3
Cambridge 3
Lappeenranta 3
Lausanne 3
Medford 3
Ogden 3
Princeton 3
Reggio Emilia 3
Shanghai 3
Agordo 2
Ann Arbor 2
Arzignano 2
Ascoli Piceno 2
Castel Gandolfo 2
Duisburg 2
Houston 2
London 2
Paderno Dugnano 2
Prescot 2
Pune 2
Roxbury 2
Saint-Martin-le-Vinoux 2
Sassari 2
Seoul 2
Wilmington 2
Birmingham 1
Bologna 1
Borgonovo Val Tidone 1
Bremblens 1
Chiswick 1
Des Moines 1
Forlì 1
Gwangju 1
Hamburg 1
Kharkiv 1
Kilburn 1
Kochi 1
Montegrotto Terme 1
Nantou City 1
Piraeus 1
Pordenone 1
Quinto di Treviso 1
Seattle 1
Vicenza 1
Woodbridge 1
Zurich 1
Totale 397
Nome #
III-N optoelectronics: defects, reliability and challenges 44
Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics 42
Analysis of degradation mechanisms in UVC single QW LEDs through electrical, optical and spectral measurements 35
Defects and Reliability of GaN-Based LEDs: Review and Perspectives 35
Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer 32
Discriminating the effects of deep-levels in InGaN/GaN LEDs: impact on forward leakage current 27
UV LED reliability: degradation mechanisms and challenges 24
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics 24
Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics 23
Probing carrier transport and recombination processes in dichromatic GaN-based LEDs: a nonequilibrium Green’s function study 21
Reliability and efficiency-limiting mechanisms in III-N LEDs: an experimental analysis assisted by numerical simulations 21
Modeling of TAT-related forward leakage current in InGaN/GaN SQW LEDs based on experimentally-determined defects parameters 21
DLTS-based defect analysis in UV-C single QW LEDs during a constant current stress 20
Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy 19
Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations 18
III-N optoelectronic devices: understanding the physics of electro-optical degradation 16
III-N optical devices: physical processes limiting efficiency and reliability 15
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations 15
On the degradation mechanisms of state-of-the-art UV-C LEDs 9
Lifetime limiting degradation mechanisms of state-of-the-art UVC LEDs 9
Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress 8
Modeling the electrical characteristic and degradation mechanisms of UV-C LEDs 7
On the importance of Fast and Accurate LED Optical and Thermal Characterization: from visible use cases to UV technologies 3
Modeling of the electrical characteristics and degradation mechanisms of UV-C LEDs 1
Totale 489
Categoria #
all - tutte 3.634
article - articoli 1.484
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.118


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/202235 0 0 6 0 0 1 4 3 1 0 14 6
2022/2023138 6 4 10 2 15 13 16 12 25 0 9 26
2023/2024316 34 28 19 31 38 40 31 9 27 18 24 17
Totale 489