ROCCATO, NICOLA
 Distribuzione geografica
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Continente #
EU - Europa 144
NA - Nord America 99
AS - Asia 1
Totale 244
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Nazione #
IT - Italia 120
US - Stati Uniti d'America 99
DE - Germania 7
FI - Finlandia 6
GB - Regno Unito 3
FR - Francia 2
IE - Irlanda 2
BE - Belgio 1
GR - Grecia 1
SE - Svezia 1
TW - Taiwan 1
UA - Ucraina 1
Totale 244
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Città #
Padova 95
Chandler 21
Turin 8
Washington 7
Helsinki 6
Fairfield 5
Ashburn 4
Cambridge 3
Medford 3
Milan 3
Princeton 3
Reggio Emilia 3
Ann Arbor 2
Castel Gandolfo 2
Duisburg 2
Houston 2
Roxbury 2
Saint-Martin-le-Vinoux 2
Sassari 2
Wilmington 2
Bologna 1
Borgonovo Val Tidone 1
Brussels 1
Chiswick 1
Des Moines 1
Forlì 1
Kharkiv 1
London 1
Montegrotto Terme 1
Nantou City 1
New Bedfont 1
Piraeus 1
Pordenone 1
Vicenza 1
Woodbridge 1
Totale 192
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Nome #
Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics 37
Defects and Reliability of GaN-Based LEDs: Review and Perspectives 28
III-N optoelectronics: defects, reliability and challenges 25
Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer 23
Analysis of degradation mechanisms in UVC single QW LEDs through electrical, optical and spectral measurements 19
Discriminating the effects of deep-levels in InGaN/GaN LEDs: impact on forward leakage current 18
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics 16
DLTS-based defect analysis in UV-C single QW LEDs during a constant current stress 15
Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics 14
Modeling of TAT-related forward leakage current in InGaN/GaN SQW LEDs based on experimentally-determined defects parameters 14
UV LED reliability: degradation mechanisms and challenges 14
Probing carrier transport and recombination processes in dichromatic GaN-based LEDs: a nonequilibrium Green’s function study 8
III-N optical devices: physical processes limiting efficiency and reliability 7
Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations 6
Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy 6
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations 5
Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress 4
III-N optoelectronic devices: understanding the physics of electro-optical degradation 2
Totale 261
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Categoria #
all - tutte 1.622
article - articoli 712
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.334
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/202235 0 0 6 0 0 1 4 3 1 0 14 6
2022/2023145 6 4 10 2 15 13 23 12 25 0 9 26
2023/202481 34 28 19 0 0 0 0 0 0 0 0 0
Totale 261