RUZZARIN, MARIA

RUZZARIN, MARIA  

Università di Padova  

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Risultati 1 - 20 di 33 (tempo di esecuzione: 0.04 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Evidence of Hot-Electron Degradation in GaN-based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress 2016 RUZZARIN, MARIAMENEGHINI, MATTEOROSSETTO, ISABELLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs 2016 MENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDERUZZARIN, MARIAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis 2016 ROSSETTO, ISABELLAMENEGHINI, MATTEORUZZARIN, MARIAFAVARON, ANDREAMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Reliability of Power Devices: Bias-Induced Threshold Voltage Instability and Dielectric Breakdown in GaN MIS-HEMTs 2016 MENEGHESSO, GAUDENZIOBISI, DAVIDEROSSETTO, ISABELLARUZZARIN, MARIAMENEGHINI, MATTEOZANONI, ENRICO - - IEEE International Integrated Reliability Workshop (IEEE IIRW), October 8-12, 2017, Stanford Sierra Conference Center, Fallen Leaf Lake, CA, USA
Instability of Dynamic- RONand Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors 2017 Ruzzarin, M.Meneghini, M.Bisi, D.Meneghesso, G.Zanoni, E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Positive and negative Vth instabilities in Vertical GaN-on-GaN FinFET 2017 Maria RuzzarinMatteo MeneghiniDavide BisiCarlo De SantiGaudenzio MeneghessoEnrico Zanoni + - - Proceedings of the 12th International Conference on Nitride Semiconductors (ICNS-12)
Reliability physics of GaN HEMTs for power switching applications: role of the gate structure 2017 Enrico ZanoniAlessandro BarbatoDavide BisiCarlo De SantiFabiana RampazzoIsabella RossettoMaria RuzzarinNicola TrivellinGaudenzio MeneghessoMatteo Meneghini + - - Proceedings of the 12th International Conference on Nitride Semiconductors (ICNS-12)
Role of deep levels and time-dependent breakdown effects in determining performances and reliability of power GaN devices 2017 Enrico ZanoniAlessandro BarbatoDavide BisiCarlo De SantiIsabella RossettoMaria RuzzarinNicola TrivellinAlessandro ChiniGaudenzio MeneghessoMatteo Meneghini - - Proceedings of the 9th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2017)
Dielectric related issues in GaN based MIS HEMTs 2017 G. MeneghessoD. BisiI RossettoM. RuzzarinC. De SantiMENEGHINI, MATTEOE. Zanoni - - Proceedings of the 44th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-44)
Reliability and failure analysis in power GaN-HEMTs: An overview 2017 Meneghini, MatteoRossetto, IsabellaDe Santi, CarloRampazzo, FabianaTajalli, AlalehBarbato, AlessandroRuzzarin, MariaBorga, MatteoCanato, EleonoraZanoni, EnricoMeneghesso, Gaudenzio IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Study of trapping in GaN-based power HEMTs based on High-Voltage Double-Pulsed Backgating Measurement System 2017 Maria RuzzarinAlessandro BarbatoMatteo MeneghiniIsabella RossettoGaudenzio MeneghessoEnrico Zanoni + - - Proceedings of the 41th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits 2017
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift 2017 Dalcanale, StefanoMeneghini, MatteoTajalli, AlalehRossetto, IsabellaRuzzarin, MariaZanoni, EnricoMeneghesso, Gaudenzio + IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Degradation Mechanisms of GaN HEMTs with p-Type Gate under Forward Gate Bias Overstress 2018 Ruzzarin, M.Meneghini, M.Meneghesso, G.Zanoni, E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Degradation of vertical GaN FETs under gate and drain stress 2018 Ruzzarin, M.Meneghini, M.De Santi, C.Meneghesso, G.Zanoni, E. + IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Positive and negative threshold voltage instabilities in GaN-based transistors 2018 Meneghesso, G.De Santi, C.Ruzzarin, M.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
Gallium Nitride power devices: challenges and perspectives 2018 M. MeneghiniA. BarbatoM. BorgaE. CanatoC. De SantiE. FabrisF. RampazzoM. RuzzarinA. TajalliG. MeneghessoE. Zanoni - - Proceedings of the 50th Annual Meeting of the Associazione Società Italiana di Elettronica (SIE 2018)
Study of the stability of GaN-HEMTs with p-type Gate under forward Gate Bias 2018 M. RuzzarinM. MeneghiniA. BarbatoPADOVAN, VALERIAG. MeneghessoE. Zanoni + - - Proceedings of the GaN Marathon 2.0
Reliability of GaN-Based Power Devices 2018 G. MeneghessoE. ZanoniM. MeneghiniM. RuzzarinI. Rossetto - - Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 2018 G. MeneghessoM. MeneghiniC. De SantiA. BarbatoM. BarbatoM. BorgaE. CanatoE. FabrisF. MasinM. RuzzarinA. TajalliE. Zanoni - - Proceedings of the 2018 International Workshop on Nitride Semiconductors (IWN 2018)
Recent Advancements in Power GaN Reliability 2018 C. De SantiM. MeneghiniM. BorgaM. RuzzarinE. CanatoA. TajalliA. BarbatoE. FabrisE. ZanoniG. Meneghesso - - Proceedings of the 2018 Materials Research Society Spring Meeting