RUZZARIN, MARIA

RUZZARIN, MARIA  

Università di Padova  

Mostra records
Risultati 1 - 14 di 14 (tempo di esecuzione: 0.016 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs 2020 Mukherjee K.Borga M.Ruzzarin M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS EXPRESS - -
Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias 2019 Ruzzarin M.De Santi C.Chiocchetta F.Zanoni E.Meneghesso G.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Degradation Mechanisms of GaN HEMTs with p-Type Gate under Forward Gate Bias Overstress 2018 Ruzzarin, M.Meneghini, M.Meneghesso, G.Zanoni, E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Degradation Mechanisms of GaN-Based Vertical Devices: A Review 2020 Meneghini M.Fabris E.Ruzzarin M.De Santi C.Meneghesso G.Zanoni E. + PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE - -
Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments 2018 Ruzzarin, M.Meneghini, M.De Santi, C.Meneghesso, G.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors 2019 M. RuzzarinM. MeneghiniC. de SantiA. NevianiG. MeneghessoE. Zanoni + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Evidence of Hot-Electron Degradation in GaN-based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress 2016 RUZZARIN, MARIAMENEGHINI, MATTEOROSSETTO, ISABELLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Exploration of gate trench module for vertical GaN devices 2020 Ruzzarin M.Liang H.De Santi C.Neviani A.Meneghini M.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors 2019 Ruzzarin, MariaDe Santi, CarloMeneghini, MatteoMeneghesso, GaudenzioZanoni, Enrico + IEEE ELECTRON DEVICE LETTERS - -
Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3gate insulator 2020 Ruzzarin M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS LETTERS - -
Instability of Dynamic- RONand Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors 2017 Ruzzarin, M.Meneghini, M.Bisi, D.Meneghesso, G.Zanoni, E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Negative bias-induced threshold voltage instability in GaN-on-Si power HEMTs 2016 MENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDERUZZARIN, MARIAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Positive and negative threshold voltage instabilities in GaN-based transistors 2018 Meneghesso, G.De Santi, C.Ruzzarin, M.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis 2016 ROSSETTO, ISABELLAMENEGHINI, MATTEORUZZARIN, MARIAFAVARON, ANDREAMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -