RENSO, NICOLA
 Distribuzione geografica
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Continente #
NA - Nord America 878
EU - Europa 145
AS - Asia 73
OC - Oceania 1
Totale 1.097
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Nazione #
US - Stati Uniti d'America 878
IT - Italia 94
CN - Cina 49
IN - India 15
SE - Svezia 15
FI - Finlandia 9
DE - Germania 6
IE - Irlanda 5
GB - Regno Unito 4
JP - Giappone 4
NL - Olanda 3
BE - Belgio 2
CH - Svizzera 2
FR - Francia 2
IL - Israele 2
AT - Austria 1
AU - Australia 1
HK - Hong Kong 1
HR - Croazia 1
MO - Macao, regione amministrativa speciale della Cina 1
NP - Nepal 1
UA - Ucraina 1
Totale 1.097
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Città #
Fairfield 159
Ashburn 97
Ann Arbor 72
Chandler 70
Woodbridge 69
Houston 59
Cambridge 52
Seattle 51
Wilmington 51
Beijing 26
San Diego 24
Padova 20
Medford 18
Princeton 18
Des Moines 14
Pune 13
Boardman 9
Helsinki 8
Cagliari 6
Nanjing 6
Dublin 5
Guangzhou 4
Roxbury 4
Tokyo 4
Borås 3
Hangzhou 3
Naples 3
New York 3
Norwalk 3
Brussels 2
Chicago 2
Edinburgh 2
Munich 2
Nanchang 2
Paris 2
Shanghai 2
Tel Aviv 2
Zurich 2
Andover 1
Birmingham 1
Brisbane 1
Changsha 1
Columbus 1
Groningen 1
Hebei 1
Imperia 1
Jinan 1
Kathmandu 1
London 1
Los Angeles 1
Maasbommel 1
Macao 1
Miami 1
New Delhi 1
Philadelphia 1
Pignone 1
Redwood City 1
Rome 1
Shenyang 1
Tappahannock 1
Tianjin 1
Tuenno 1
Vienna 1
Zagreb 1
Zhengzhou 1
Totale 919
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Nome #
Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs 119
Evidence for avalanche generation in reverse-biased InGaN LEDs 103
Investigation of the time-dependent failure of InGaN-based LEDs submitted to reverse-bias stress 88
Challenges for highly reliable GaN-based LEDs 88
Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs 83
Understanding the degradation processes of GaN based LEDs submitted to extremely high current density 82
Origin of the low-forward leakage current in InGaN-based LEDs 77
Evidence of optically induced degradation in gallium nitride optoelectronic devices 69
Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress 67
Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process 59
Dependence of degradation on InGaN quantum well position: A study based on color coded structures 57
Degradation of InGaN-based optoelectronic devices under electrical and optical stress 43
Analysis of degradation mechanisms induced by electrical over-stress on high efficiency gallium nitride LEDs 41
Evidence for recombination-induced degradation processes in InGaN-based optoelectronic devices 37
Demonstration of band-to-band tunneling and avalanche regime in InGaN LEDs 32
Photon-driven degradation processes in GaN-based optoelectronic devices 30
Demonstration of tunneling and sub-bandgap recombination in InGaN LEDs at extremely low current levels 24
Electrically- and Optically-driven Degradation Processes in InGaN-based Photodetectors 23
Totale 1.122
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Categoria #
all - tutte 3.849
article - articoli 1.653
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.502
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201977 0 0 0 0 0 0 0 0 0 17 34 26
2019/2020300 27 12 4 13 30 19 25 34 37 76 10 13
2020/2021169 26 13 22 5 4 3 6 23 20 18 16 13
2021/2022212 13 30 28 22 0 5 16 24 5 6 21 42
2022/2023220 33 3 1 10 41 27 2 30 40 0 27 6
2023/202499 7 12 0 2 3 35 20 7 6 7 0 0
Totale 1.122