CANATO, ELEONORA
 Distribuzione geografica
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Continente #
NA - Nord America 1.703
EU - Europa 941
AS - Asia 713
AF - Africa 227
SA - Sud America 161
OC - Oceania 17
Continente sconosciuto - Info sul continente non disponibili 12
Totale 3.774
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Nazione #
US - Stati Uniti d'America 1.600
IE - Irlanda 409
SG - Singapore 258
CN - Cina 132
IT - Italia 129
BR - Brasile 100
HK - Hong Kong 73
DE - Germania 64
PL - Polonia 54
VN - Vietnam 50
FI - Finlandia 28
GB - Regno Unito 26
BJ - Benin 23
FR - Francia 23
AR - Argentina 22
IN - India 22
SE - Svezia 21
UA - Ucraina 21
NL - Olanda 19
KR - Corea 15
CI - Costa d'Avorio 14
RU - Federazione Russa 14
AT - Austria 13
CH - Svizzera 12
BE - Belgio 11
EE - Estonia 10
TR - Turchia 10
AO - Angola 9
BB - Barbados 9
GR - Grecia 9
JP - Giappone 9
MY - Malesia 9
ZA - Sudafrica 9
DZ - Algeria 8
ID - Indonesia 8
KG - Kirghizistan 8
MR - Mauritania 8
UZ - Uzbekistan 8
AU - Australia 7
BF - Burkina Faso 7
BS - Bahamas 7
CL - Cile 7
CR - Costa Rica 7
CV - Capo Verde 7
CW - ???statistics.table.value.countryCode.CW??? 7
CY - Cipro 7
ET - Etiopia 7
GA - Gabon 7
GN - Guinea 7
GP - Guadalupe 7
IR - Iran 7
JM - Giamaica 7
MG - Madagascar 7
MW - Malawi 7
MX - Messico 7
PA - Panama 7
PH - Filippine 7
SA - Arabia Saudita 7
SN - Senegal 7
TH - Thailandia 7
BW - Botswana 6
BY - Bielorussia 6
CO - Colombia 6
CU - Cuba 6
CZ - Repubblica Ceca 6
DO - Repubblica Dominicana 6
GH - Ghana 6
GT - Guatemala 6
NI - Nicaragua 6
NP - Nepal 6
PK - Pakistan 6
PT - Portogallo 6
TJ - Tagikistan 6
TW - Taiwan 6
YE - Yemen 6
AE - Emirati Arabi Uniti 5
CA - Canada 5
CD - Congo 5
CG - Congo 5
DK - Danimarca 5
EC - Ecuador 5
EG - Egitto 5
IQ - Iraq 5
JO - Giordania 5
KZ - Kazakistan 5
PY - Paraguay 5
SD - Sudan 5
UG - Uganda 5
ZW - Zimbabwe 5
AM - Armenia 4
AZ - Azerbaigian 4
BA - Bosnia-Erzegovina 4
BG - Bulgaria 4
BO - Bolivia 4
CM - Camerun 4
ES - Italia 4
HT - Haiti 4
LU - Lussemburgo 4
MA - Marocco 4
MD - Moldavia 4
Totale 3.625
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Città #
Dublin 408
Fairfield 235
Ashburn 214
Houston 155
Singapore 144
Chandler 115
Woodbridge 115
Cambridge 87
Seattle 76
Santa Clara 72
Wilmington 68
Hong Kong 66
Ann Arbor 59
Beijing 52
Bytom 43
Boardman 37
Munich 31
New York 27
San Diego 27
Padua 23
Medford 22
Princeton 22
Cotonou 21
Padova 19
Ho Chi Minh City 16
Los Angeles 16
Helsinki 15
Abidjan 14
Des Moines 14
São Paulo 11
Buffalo 10
London 10
Hefei 9
Hwaseong-si 9
Luanda 9
Turku 9
Bishkek 8
Bridgetown 8
Nanjing 8
Tallinn 8
Amsterdam 7
Chennai 7
Dakar 7
Falkenstein 7
Libreville 7
Nouakchott 7
Tashkent 7
Vienna 7
Warsaw 7
Accra 6
Basel 6
Conakry 6
Falls Church 6
Gaborone 6
Havana 6
Managua 6
Nassau 6
Panama City 6
Redondo Beach 6
San José 6
Amman 5
Antananarivo 5
Brussels 5
Chicago 5
Council Bluffs 5
Denver 5
Dushanbe 5
Harare 5
Kampala 5
Kuala Lumpur 5
Limassol 5
Minsk 5
Nuremberg 5
Rome 5
Roxbury 5
Seoul 5
Shenyang 5
Willemstad 5
Addis Ababa 4
Baku 4
Brazzaville 4
Cairo 4
Haiphong 4
Kingston 4
Kinshasa 4
Lilongwe 4
Lusaka 4
Maputo 4
Ouagadougou 4
Patna 4
Praia 4
Ranchi 4
Rio de Janeiro 4
Riyadh 4
San Fernando 4
Stockholm 4
Versailles 4
Almaty 3
Andorra la Vella 3
Apia 3
Totale 2.616
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Nome #
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs 580
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 220
Degradation physics of GaN-based lateral and vertical devices 196
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs 185
Evidence for double degradation regime in off-state stressed 100 V GaN transistors: From dielectric failure to subthreshold current increase 179
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment 165
Reliability and failure analysis in power GaN-HEMTs: An overview 159
GaN HEMTs with p-GaN gate: Field-And time-dependent degradation 150
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping 141
Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress 136
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level 134
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors 134
Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs 133
Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate 132
OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution 128
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions 126
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 124
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 117
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 113
Recent Advancements in Power GaN Reliability 102
Gallium Nitride power devices: challenges and perspectives 98
Challenges towards highly reliable GaN power transistors 92
GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal 92
Experimental Demonstration of Avalanche operation in lateral normally-off 100 V GaN HEMTs 70
Evidence for Avalanche Operation in Sub-Micrometer Power GaN HEMTs with p-GaN Gate 57
Modeling of the gate leakage and forward gate reliability in Schottky-gate p-GaN HEMTs 23
Gate leakage modeling and reliability in forward gate bias of p-GaN HEMTs with Schottky-gate 21
Totale 3.807
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Categoria #
all - tutte 10.887
article - articoli 4.517
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 15.404
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021273 0 0 0 0 4 5 32 131 29 17 32 23
2021/2022406 6 55 44 18 6 7 26 29 20 36 60 99
2022/2023475 65 51 50 54 46 21 38 38 33 8 33 38
2023/2024287 37 45 42 33 33 60 4 4 2 2 10 15
2024/2025618 1 25 16 31 76 40 15 78 34 14 124 164
2025/20261.228 158 221 306 432 111 0 0 0 0 0 0 0
Totale 3.807