RZIN, MEHDI
 Distribuzione geografica
Continente #
NA - Nord America 412
AS - Asia 97
EU - Europa 80
SA - Sud America 30
AF - Africa 6
Totale 625
Nazione #
US - Stati Uniti d'America 409
SG - Singapore 56
BR - Brasile 28
CN - Cina 27
IT - Italia 21
PL - Polonia 15
FI - Finlandia 12
DE - Germania 8
RU - Federazione Russa 5
VN - Vietnam 5
CI - Costa d'Avorio 4
GB - Regno Unito 4
NL - Olanda 4
FR - Francia 3
IN - India 3
CA - Canada 2
SE - Svezia 2
AT - Austria 1
BB - Barbados 1
BE - Belgio 1
CH - Svizzera 1
CL - Cile 1
CV - Capo Verde 1
IE - Irlanda 1
IQ - Iraq 1
JP - Giappone 1
KE - Kenya 1
LT - Lituania 1
PK - Pakistan 1
PS - Palestinian Territory 1
TR - Turchia 1
TW - Taiwan 1
UA - Ucraina 1
VE - Venezuela 1
Totale 625
Città #
Fairfield 61
Ashburn 38
Seattle 33
Woodbridge 32
Singapore 31
Santa Clara 24
Cambridge 23
Chandler 22
Houston 19
Wilmington 17
Boardman 14
Bytom 14
Beijing 11
Helsinki 11
Ann Arbor 10
Padova 10
San Diego 9
Medford 8
Princeton 8
Des Moines 7
New York 6
Dong Ket 5
São Paulo 5
Abidjan 4
Guangzhou 4
Chicago 3
London 3
Nuremberg 3
Tappahannock 3
Washington 3
Amsterdam 2
Bengaluru 2
Dallas 2
Karlsruhe 2
Natal 2
Redwood City 2
Annapolis 1
Atlanta 1
Baghdad 1
Boa Vista 1
Boston 1
Bridgetown 1
Brussels 1
Campinas 1
Charlotte 1
Curitiba 1
Delhi 1
Douglas 1
Dover 1
Draveil 1
Dublin 1
Durham 1
Falkenstein 1
Falkirk 1
Fuzhou 1
Hangzhou 1
Harrisburg 1
Hebron 1
Hsinchu 1
Ibirité 1
Iporá 1
Istanbul 1
Itabira 1
Itaquaquecetuba 1
Kamianske 1
Lappeenranta 1
Maceió 1
Montreal 1
Mérida 1
Nairobi 1
Nanjing 1
Nova Timboteua 1
Palmeirópolis 1
Petrópolis 1
Porto Alegre 1
Praia 1
Promissão 1
Quetta 1
Quincy 1
Rondonópolis 1
Salvador 1
San Francisco 1
Santa Cruz do Sul 1
Santiago 1
Scorzè 1
Sertanópolis 1
Shenyang 1
Silver Spring 1
Springfield 1
São João da Boa Vista 1
São Lourenço da Serra 1
Tokyo 1
Toronto 1
Valinhos 1
Vera Cruz 1
Vienna 1
Warsaw 1
Totale 514
Nome #
Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs 100
Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration 96
Investigation into trapping modes and threshold instabilities of state-of-art commercial GaN HEMTs 89
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs 77
On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion 74
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 69
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 69
24 Hours Stress Test and Failure Analysis of 0.25 μm AlGaN/GaN HEMTs 60
Totale 634
Categoria #
all - tutte 2.784
article - articoli 1.943
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.727


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202012 0 0 0 0 0 0 0 0 0 0 0 12
2020/2021110 2 13 12 14 1 7 5 4 12 1 28 11
2021/202282 2 15 7 12 1 0 3 12 1 0 5 24
2022/202372 14 4 4 5 15 7 0 7 8 1 7 0
2023/202452 3 9 6 3 2 16 0 2 1 5 2 3
2024/2025212 0 13 9 12 32 12 5 36 12 10 36 35
Totale 634