FREGOLENT, MANUEL
 Distribuzione geografica
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Continente #
EU - Europa 269
NA - Nord America 128
AS - Asia 22
Totale 419
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Nazione #
IE - Irlanda 178
US - Stati Uniti d'America 128
IT - Italia 54
GB - Regno Unito 12
ID - Indonesia 9
DE - Germania 8
FI - Finlandia 7
JP - Giappone 5
IN - India 4
BE - Belgio 3
CN - Cina 2
DK - Danimarca 2
FR - Francia 2
NL - Olanda 2
SE - Svezia 1
SG - Singapore 1
TW - Taiwan 1
Totale 419
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Città #
Dublin 178
Padova 31
Chandler 21
Fairfield 12
London 10
Washington 10
Sarcedo 8
Helsinki 7
Cambridge 6
Houston 6
Berlin 4
Ashburn 3
Des Moines 3
Kanpur 3
Medford 3
Odawara 3
Princeton 3
Brussels 2
Dongguan 2
Legnago 2
Odense 2
Roermond 2
San Diego 2
Wilmington 2
Woodbridge 2
Bolzano 1
Branford 1
Böblingen 1
Chiswick 1
Fossalta di Piave 1
Gelsenkirchen 1
Kermt 1
Nantou City 1
Patna 1
Pignone 1
Ravenna 1
Reggello 1
Venice 1
Totale 340
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Nome #
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 201
Carrier capture kinetics, deep levels, and isolation properties of β -Ga2O3Schottky-barrier diodes damaged by nitrogen implantation 38
Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy 36
Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3Schottky barrier diodes 29
Novel models for the analysis of the dynamic performance of wide bandgap devices 21
Deep Levels and Threshold Voltage Instability in Vertical a-Plane Oriented GaN MISFETs 21
Review on the degradation of GaN-based lateral power transistors 12
Investigation of deep level defects in n-type GaAsBi 10
Deep levels and conduction processes in nitrogen-implanted Ga2O3 Schottky barrier diodes 9
CONDUCTION PROPERTIES AND THRESHOLD VOLTAGE INSTABILITY IN beta-Ga2O3 MOSFETs 9
Dynamic performance of wide bandgap devices 8
Conduction processes, modeling and deep levels in nitrogen-implanted β-Gallium oxide Schottky diodes 7
Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs 6
Dynamic and Capacitive Characterization of 3D GaN n-p-n Vertical Fin-FETs 6
Modeling of the Conduction Processes and Deep Levels in Annealed Nitrogen-Implanted β-Gallium Oxide Schottky diodes 6
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations 5
Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling 4
Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques 2
Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric 1
Totale 431
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Categoria #
all - tutte 1.710
article - articoli 1.057
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.767
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202114 0 0 0 0 0 0 0 0 0 0 0 14
2021/202231 0 0 4 0 0 4 4 3 3 0 7 6
2022/2023231 5 0 5 3 15 11 41 27 38 11 39 36
2023/2024155 43 63 49 0 0 0 0 0 0 0 0 0
Totale 431