FREGOLENT, MANUEL
 Distribuzione geografica
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Continente #
EU - Europa 452
NA - Nord America 274
AS - Asia 244
Totale 970
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Nazione #
US - Stati Uniti d'America 270
IE - Irlanda 249
IT - Italia 107
SG - Singapore 57
CN - Cina 53
JP - Giappone 46
IN - India 28
GB - Regno Unito 27
FR - Francia 23
TW - Taiwan 19
KR - Corea 18
DE - Germania 12
ID - Indonesia 9
FI - Finlandia 8
BE - Belgio 7
NL - Olanda 6
HK - Hong Kong 5
CA - Canada 4
CY - Cipro 4
AT - Austria 3
DK - Danimarca 3
RU - Federazione Russa 3
AL - Albania 2
IR - Iran 2
VN - Vietnam 2
PL - Polonia 1
SE - Svezia 1
TR - Turchia 1
Totale 970
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Città #
Dublin 249
Ashburn 66
Padova 39
Singapore 38
Beijing 24
Chandler 21
Kawasaki 17
Fairfield 12
Los Angeles 10
Sarcedo 10
Tokyo 10
Washington 10
London 9
Milan 8
Helsinki 7
Cambridge 6
Dallas 6
Houston 6
Manchester 6
Santa Clara 6
Bengaluru 5
Guangzhou 5
Hsinchu 5
Shanghai 5
Arzignano 4
Berlin 4
Bristol 4
Changsha 4
Limassol 4
Modena 4
New Delhi 4
Newark 4
Parma 4
Des Moines 3
Frankfurt am Main 3
Gaithersburg 3
Gurugram 3
Higashimukōjima 3
Jaipur 3
Kanpur 3
Leuven 3
Lyon 3
Medford 3
New Taipei City 3
Odawara 3
Ogden 3
Patna 3
Princeton 3
Pune 3
Sala Baganza 3
Sherbrooke 3
Albany 2
Ann Arbor 2
Arce 2
Azzano Decimo 2
Cislago 2
Daejeon 2
Dongguan 2
Faridabad 2
Gangnam-gu 2
Genoa 2
Hangzhou 2
Hanoi 2
Hwaseong-si 2
Kaohsiung City 2
Legnago 2
Mapo-gu 2
Minoh 2
Nagoya 2
New York 2
Nijmegen 2
Odense 2
Phoenix 2
Pohang 2
Portland 2
Prineville 2
Roermond 2
San Diego 2
Scorzè 2
Southwark 2
Taipei 2
Tehran 2
Tempe 2
Tirana 2
Treviso 2
Venice 2
Villach 2
Wilmington 2
Woodbridge 2
Xi'an 2
Abano Terme 1
Amsterdam 1
Apex 1
Arezzo 1
Bolzano 1
Branford 1
Brussels 1
Buffalo 1
Böblingen 1
Capannori 1
Totale 758
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Nome #
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 282
Gallium Oxide and Gallium Nitride-based devices for high-power applications: characterization, reliability, and modelling 123
Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy 46
Carrier capture kinetics, deep levels, and isolation properties of β -Ga2O3Schottky-barrier diodes damaged by nitrogen implantation 46
Novel models for the analysis of the dynamic performance of wide bandgap devices 41
Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3Schottky barrier diodes 39
Trapping and Reliability Properties of Al2O3 Gate Dielectrics Obtained with Stacked ALD Deposition 34
Deep Levels and Threshold Voltage Instability in Vertical a-Plane Oriented GaN MISFETs 32
GaN Vertical Devices: challenges for high performance and stability 32
Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques 28
Review on the degradation of GaN-based lateral power transistors 27
Conduction processes, modeling and deep levels in nitrogen-implanted β-Gallium oxide Schottky diodes 24
Modeling of the Conduction Processes and Deep Levels in Annealed Nitrogen-Implanted β-Gallium Oxide Schottky diodes 23
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations 23
Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs 21
CONDUCTION PROPERTIES AND THRESHOLD VOLTAGE INSTABILITY IN beta-Ga2O3 MOSFETs 21
Investigation of deep level defects in n-type GaAsBi 20
Deep levels and conduction processes in nitrogen-implanted Ga2O3 Schottky barrier diodes 18
Dynamic performance of wide bandgap devices 16
Dynamic and Capacitive Characterization of 3D GaN n-p-n Vertical Fin-FETs 15
Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling 14
Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric 13
Threshold Voltage Instability in Vertical β-Ga2O3 finFETs Investigated by Combined Electrical and Optical Techniques 10
Investigation of Wafer-Level Dynamic Properties of p-GaN HEMTs in Hard Switching Conditions 9
Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results 8
Threshold voltage instability in SiO2-gate semi-vertical GaN trench MOSFETs grown on silicon substrate 7
Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs 5
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD 5
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors 4
Investigation of Threshold Voltage Instability in GaN-on-Si Trench MOSFETs with SiO2 Gate Dielectric 3
Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation 3
Modeling of the gate leakage in MOSFETs with Al2O3/β-Ga2O3 gate stack 2
On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental Approach 2
Totale 996
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Categoria #
all - tutte 4.981
article - articoli 2.769
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.750
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202114 0 0 0 0 0 0 0 0 0 0 0 14
2021/202231 0 0 4 0 0 4 4 3 3 0 7 6
2022/2023223 5 0 5 3 15 11 34 26 38 11 39 36
2023/2024527 42 62 55 39 43 61 30 29 52 34 32 48
2024/2025201 26 62 98 15 0 0 0 0 0 0 0 0
Totale 996