FREGOLENT, MANUEL

FREGOLENT, MANUEL  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 20 di 22 (tempo di esecuzione: 0.03 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 2022 Modolo N.Fregolent M.Masin F.Benato A.Bettini A.Buffolo M.De Santi C.Borga M.Vogrig D.Neviani A.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Carrier capture kinetics, deep levels, and isolation properties of β -Ga2O3Schottky-barrier diodes damaged by nitrogen implantation 2020 De Santi C.Fregolent M.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS LETTERS - -
Conduction processes, modeling and deep levels in nitrogen-implanted β-Gallium oxide Schottky diodes 2022 Carlo De SantiManuel FregolentMatteo BuffoloGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini + - - Proceedings of the 4th International Workshop on Gallium Oxide and Related Materials, Nagano, Japan
CONDUCTION PROPERTIES AND THRESHOLD VOLTAGE INSTABILITY IN beta-Ga2O3 MOSFETs 2022 Fregolent, MDe Santi, CMeneghesso, GZanoni, EMeneghini, M + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings Volume 12002, Oxide-based Materials and Devices XIII
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors 2023 Fregolent, ManuelMarcuzzi, AlbertoSanti, Carlo DeMeneghesso, GaudenzioZanoni, EnricoBrusaterra, EnricoMeneghini, Matteo + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy 2021 Fregolent M.Buffolo M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Deep levels and conduction processes in nitrogen-implanted Ga2O3 Schottky barrier diodes 2022 De Santi, CFregolent, MBuffolo, MMeneghesso, GZanoni, EMeneghini, M + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings Volume 12002, Oxide-based Materials and Devices XIII
Deep Levels and Threshold Voltage Instability in Vertical a-Plane Oriented GaN MISFETs 2022 Fregolent M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + - - Proceedings of WOCSDICE-EXMATEC 2022, Ponta Delgada, Azores, Portugal
Dynamic and Capacitive Characterization of 3D GaN n-p-n Vertical Fin-FETs 2021 Fregolent, MDe Santi, CMeneghesso, GZanoni, EMeneghini, M + - - 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
Dynamic performance of wide bandgap devices 2022 C. De SantiM. FregolentN. ModoloA. NardoM. BuffoloF. RampazzoG. MeneghessoE. ZanoniM. Meneghini - - Proceedings of the 6th IEEE International Conference on Emerging Electronics (ICEE 2022)
GaN Vertical Devices: challenges for high performance and stability 2023 Matteo MeneghiniManuel FregolentCarlo De SantiMatteo BuffoloAlberto MarcuzziDavide FaveroGaudenzio MeneghessoEnrico Zanoni + - - Proceedings of ICNS-14 conference
Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric 2023 Fregolent, ManuelDe Santi, CarloMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + APPLIED PHYSICS LETTERS - -
Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3Schottky barrier diodes 2021 Fregolent M.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF APPLIED PHYSICS - -
Investigation of deep level defects in n-type GaAsBi 2022 Fregolent, MBuffolo, MDe Santi, CMeneghesso, GZanoni, EMeneghini, M + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings Volume 12021, Novel In-Plane Semiconductor Lasers XXI
Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs 2022 Fregolent, MBoito, MMarcuzzi, ADe Santi, CMeneghesso, GZanoni, EMeneghini, M + MICROELECTRONICS RELIABILITY - -
Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling 2022 Manuel FregolentCarlo De SantiGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini + APPLIED PHYSICS LETTERS - -
Modeling of the Conduction Processes and Deep Levels in Annealed Nitrogen-Implanted β-Gallium Oxide Schottky diodes 2022 De Santi C.Fregolent M.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + - - Proceedings of Compound Semiconductor Week 2022
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations 2023 Roccato N.Piva F.De Santi C.Buffolo M.Fregolent M.Pilati M.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS LETTERS - -
Novel models for the analysis of the dynamic performance of wide bandgap devices 2023 Carlo De SantiManuel FregolentNicola ModoloMatteo BuffoloFabiana RampazzoGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini - - Proceedings of the 37th Reliability of Compound Semiconductors Workshop (ROCS 2023)
Review on the degradation of GaN-based lateral power transistors 2021 De Santi, C.Buffolo, M.Caria, A.Chiocchetta, F.Favero, D.Fregolent, M.Masin, F.Modolo, N.Nardo, A.Piva, F.Rampazzo, F.Trivellin, N.Gao, Z.Meneghini, M.Zanoni, E.Meneghesso, G. + E-PRIME, ADVANCES IN ELECTRICAL ENGINEERING, ELECTRONICS AND ENERGY - -