FREGOLENT, MANUEL

FREGOLENT, MANUEL  

Dipartimento di Ingegneria dell'Informazione - DEI  

Mostra records
Risultati 1 - 11 di 11 (tempo di esecuzione: 0.034 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 2022 Modolo N.Fregolent M.Masin F.Benato A.Bettini A.Buffolo M.De Santi C.Borga M.Vogrig D.Neviani A.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Carrier capture kinetics, deep levels, and isolation properties of β -Ga2O3Schottky-barrier diodes damaged by nitrogen implantation 2020 De Santi C.Fregolent M.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS LETTERS - -
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors 2023 Fregolent, ManuelMarcuzzi, AlbertoSanti, Carlo DeMeneghesso, GaudenzioZanoni, EnricoBrusaterra, EnricoMeneghini, Matteo + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy 2021 Fregolent M.Buffolo M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric 2023 Fregolent, ManuelDe Santi, CarloMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + APPLIED PHYSICS LETTERS - -
Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3Schottky barrier diodes 2021 Fregolent M.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF APPLIED PHYSICS - -
Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs 2022 Fregolent, MBoito, MMarcuzzi, ADe Santi, CMeneghesso, GZanoni, EMeneghini, M + MICROELECTRONICS RELIABILITY - -
Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling 2022 Manuel FregolentCarlo De SantiGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini + APPLIED PHYSICS LETTERS - -
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations 2023 Roccato N.Piva F.De Santi C.Buffolo M.Fregolent M.Pilati M.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS LETTERS - -
Review on the degradation of GaN-based lateral power transistors 2021 De Santi, C.Buffolo, M.Caria, A.Chiocchetta, F.Favero, D.Fregolent, M.Masin, F.Modolo, N.Nardo, A.Piva, F.Rampazzo, F.Trivellin, N.Gao, Z.Meneghini, M.Zanoni, E.Meneghesso, G. + E-PRIME, ADVANCES IN ELECTRICAL ENGINEERING, ELECTRONICS AND ENERGY - -
Threshold voltage instability in SiO2-gate semi-vertical GaN trench MOSFETs grown on silicon substrate 2023 Fregolent, M.De Santi, C.Meneghesso, G.Zanoni, E.Meneghini, M. + MICROELECTRONICS RELIABILITY - -