FABRIS, ELENA
 Distribuzione geografica
Continente #
NA - Nord America 724
EU - Europa 100
AS - Asia 47
Totale 871
Nazione #
US - Stati Uniti d'America 724
IT - Italia 64
CN - Cina 44
SE - Svezia 19
FI - Finlandia 7
DE - Germania 5
UA - Ucraina 3
BE - Belgio 1
FR - Francia 1
IN - India 1
IQ - Iraq 1
JP - Giappone 1
Totale 871
Città #
Fairfield 167
Cambridge 72
Houston 66
Ann Arbor 56
Ashburn 55
Chandler 54
Seattle 54
Woodbridge 53
Wilmington 44
Beijing 22
Medford 20
Princeton 20
San Diego 18
Des Moines 13
Boardman 12
Helsinki 7
Padova 6
Nanjing 4
Kharkiv 3
Fuzhou 2
Jiaxing 2
Jinan 2
Munich 2
Ningbo 2
Santo Stino Di Livenza 2
Shenyang 2
Tianjin 2
Baghdad 1
Borås 1
Changsha 1
Draveil 1
Guangzhou 1
Hangzhou 1
Nanchang 1
Parma 1
Redwood City 1
Treviso 1
Vollezele 1
Xian 1
Totale 774
Nome #
Demonstration of avalanche capability in polarization-doped vertical GaN pn diodes: Study of walkout due to residual carbon concentration 113
Degradation physics of GaN-based lateral and vertical devices 102
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis 81
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability 71
Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs 66
Degradation of GaN-on-GaN vertical diodes submitted to high current stress 63
Breakdown Walkout in Polarization-Doped Vertical GaN Diodes 57
Degradation Mechanisms of GaN-Based Vertical Devices: A Review 50
GaN Vertical p-i-n Diodes in Avalanche Regime: Time-Dependent Behavior and Degradation 40
Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction 33
Recent Advancements in Power GaN Reliability 32
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 28
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 28
Gallium Nitride power devices: challenges and perspectives 25
Challenges towards highly reliable GaN power transistors 21
Avalanche capability and recoverable breakdown walkout in polarization-doped vertical GaN pn diodes 20
Trapping and Detrapping Mechanisms in β-GaO Vertical FinFETs Investigated by Electro-Optical Measurements 19
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 17
Hot-electron trapping and luminescence in GaN-based GITs and HD-GITs: an extensive analysis 13
Trapping processes and band discontinuities in Ga2O3FinFETs investigated by dynamic characterization and optically-assisted measurements 13
Totale 892
Categoria #
all - tutte 1382
article - articoli 533
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1915


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201952 0000 00 02 0142214
2019/2020290 2010114 2213 2132 57761014
2020/2021228 91765 22 3669 19222516
2021/2022218 629339 614 1020 1241659
2022/2023104 3181012 430 00 0000
Totale 892