This work reviews the most recent experimntal results concerning the characterization of hot-elecctron effects and light-emission phenomena in GaAs MESFET's, AlGaAs/GaAs and AlGaAs/InGaAs high electron mobility transistors (HEMT's), and AlGaAs/GaAs heterojunction bipolar transistors (HBT's).
EXPERIMENTAL CHARACTERIZATION OF HOT-ELECTRON-INDUCED EFFECTS AND LIGHT-EMISSION IN HETEROSTRUCTURE DEVICES
ZANONI, ENRICO;NEVIANI, ANDREA;
1994
Abstract
This work reviews the most recent experimntal results concerning the characterization of hot-elecctron effects and light-emission phenomena in GaAs MESFET's, AlGaAs/GaAs and AlGaAs/InGaAs high electron mobility transistors (HEMT's), and AlGaAs/GaAs heterojunction bipolar transistors (HBT's).File in questo prodotto:
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