A UWB 3.1 to 10.6 GHz LNA employing an input three-section band-pass Chebyshev filter is reported. Fabricated in a 0.18 μm CMOS process, -10 dB over the band, a NF of 4 dB, and an IIP3 of -6.7 dBm while consuming the IC achieves a power gain of 9.3 dB with an input match of 9 mW.

An Ultra Wideband CMOS Low Noise Amplifier for 3.1-10.6 GHz Wireless Receivers

BEVILACQUA, ANDREA;
2004

Abstract

A UWB 3.1 to 10.6 GHz LNA employing an input three-section band-pass Chebyshev filter is reported. Fabricated in a 0.18 μm CMOS process, -10 dB over the band, a NF of 4 dB, and an IIP3 of -6.7 dBm while consuming the IC achieves a power gain of 9.3 dB with an input match of 9 mW.
2004 IEEE International Solid-State Circuits Conference, Digest of Technical Papers.
9780780382671
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/1336740
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