In the framework of the ALICE Silicon Pixel Detector (SPD) project a system dedicated to the tests of the ALICElLHCb chip wafers has been assembled and is now in use for the selection of pixel chips to be bump-bonded to sensor ladders. In parallel, radiation hardness tests of the SPD silicon sensors have been carried out using the 27 MeV proton beam delivered by the XTU TANDEM accelerator at the SIRAD facility in LNL. In this paper we describe the wafer probing and irradiation set-ups and we report the obtained results.

Probing and Irradiation Tests of ALICE Pixel Chip Wafers and Sensors

LUNARDON, MARCELLO;MORETTO, SANDRA;SCARLASSARA, FERNANDO;SEGATO, GIANFRANCO;SORAMEL, FRANCESCA;
2004

Abstract

In the framework of the ALICE Silicon Pixel Detector (SPD) project a system dedicated to the tests of the ALICElLHCb chip wafers has been assembled and is now in use for the selection of pixel chips to be bump-bonded to sensor ladders. In parallel, radiation hardness tests of the SPD silicon sensors have been carried out using the 27 MeV proton beam delivered by the XTU TANDEM accelerator at the SIRAD facility in LNL. In this paper we describe the wafer probing and irradiation set-ups and we report the obtained results.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/1350845
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