The effect of air/AlGaN and GaN/substrate polarization charges on the dc performances of GaN-based HEMTs have been investigated. We find that the calculated dc drain current is 2 times higher than the experimental measurements. Our work show that the polarizations charges appears as the source of dc drain current premature saturation observed in GaNbased HEMTs.
Current collapse associated with surface states in GaN-based HEMT's. Theoretical/experimental investigations
MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2004
Abstract
The effect of air/AlGaN and GaN/substrate polarization charges on the dc performances of GaN-based HEMTs have been investigated. We find that the calculated dc drain current is 2 times higher than the experimental measurements. Our work show that the polarizations charges appears as the source of dc drain current premature saturation observed in GaNbased HEMTs.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
