Plasma charging damage impact on the performance of deep submicron MOSFETs has investigated for the first time. Annealing of defects created by charging damage is found to be progressively improved with temperature. At 400/spl deg/C, annealing is complete for both the DC and RF parameters but not thin oxide breakdown reliability.
The impact of plasma charging damage of the RF performances of deep-submicron silicon MOSFET
PACCAGNELLA, ALESSANDRO
2001
Abstract
Plasma charging damage impact on the performance of deep submicron MOSFETs has investigated for the first time. Annealing of defects created by charging damage is found to be progressively improved with temperature. At 400/spl deg/C, annealing is complete for both the DC and RF parameters but not thin oxide breakdown reliability.
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