This study presents a Monte Carlo simulation method designed to describe the growth of oxicuprate films. The basic assumption of the simulation is that the deposition process can be divided in a collisional and a thermal phase and that the collisional phase can be treated with the methods used in ion implantation. This assumption allows the extension of the simulations to energies well above the thermal range. In agreement with experimental trends, preliminary results show anisotropic effects in the film growth.

Monte Carlo simulation of cuprate oxides

MATTEI, GIOVANNI
1996

Abstract

This study presents a Monte Carlo simulation method designed to describe the growth of oxicuprate films. The basic assumption of the simulation is that the deposition process can be divided in a collisional and a thermal phase and that the collisional phase can be treated with the methods used in ion implantation. This assumption allows the extension of the simulations to energies well above the thermal range. In agreement with experimental trends, preliminary results show anisotropic effects in the film growth.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/143834
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