We studied the degradation of CMOS inverters subjected to DC and pulsed electrical stresses, focusing on the changes occurring before the onset of any breakdown in the gate oxide. We found large modifications in the static and dynamic characteristics of the inverters after the stresses. In particular, the switching voltage was altered and the speed greatly reduced.
Degradation of Static and Dynamic Behavior of CMOS Inverters during Constant and Pulsed Voltage Stress
CESTER, ANDREA;A. PACCAGNELLA;
2006
Abstract
We studied the degradation of CMOS inverters subjected to DC and pulsed electrical stresses, focusing on the changes occurring before the onset of any breakdown in the gate oxide. We found large modifications in the static and dynamic characteristics of the inverters after the stresses. In particular, the switching voltage was altered and the speed greatly reduced.File in questo prodotto:
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