Combinations of sequential ion. implantation in dielectric matrices and heating treatments in controlled atmosphere can be successfully exploited to obtain multielemental nanocluster-doped matrices. In this paper some case studies about the formation of both metal alloy nanoclusters and III-V semiconductor nanoclusters in dielectrics are presented, with the aim of enlighten the effects of both the implantation dose and heating in different atmosphere on the nanocluster composition. Preliminary results on the formation of As-Ga-In nanostructures are also discussed.
Multielemental nanoclusters formed by ion implantation in dielectrics
MAURIZIO, CHIARA
2004
Abstract
Combinations of sequential ion. implantation in dielectric matrices and heating treatments in controlled atmosphere can be successfully exploited to obtain multielemental nanocluster-doped matrices. In this paper some case studies about the formation of both metal alloy nanoclusters and III-V semiconductor nanoclusters in dielectrics are presented, with the aim of enlighten the effects of both the implantation dose and heating in different atmosphere on the nanocluster composition. Preliminary results on the formation of As-Ga-In nanostructures are also discussed.File in questo prodotto:
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