SILC and RILC have been studied on similar devices. SILC and RILC have the same conduction mechanism: Fowler-Nordheim tunneling with reduced barrier height. The conduction mechanism can be attributed to electron tunneling assisted by oxide weak spots (electron traps). SILC and RILC have different generation kinetics: SILC saturates by increasing stress level, RILC does not. Radiation stresses offer a new method to understand leakage current phenomena
The Dependence of the Ionizing Radiation Induced Leakage Current versus the total dose on Ultra-Thin Gate Oxides
A. PACCAGNELLA;CESTER, ANDREA
1998
Abstract
SILC and RILC have been studied on similar devices. SILC and RILC have the same conduction mechanism: Fowler-Nordheim tunneling with reduced barrier height. The conduction mechanism can be attributed to electron tunneling assisted by oxide weak spots (electron traps). SILC and RILC have different generation kinetics: SILC saturates by increasing stress level, RILC does not. Radiation stresses offer a new method to understand leakage current phenomenaFile in questo prodotto:
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