New GGSCR Schottky-contact based to be adopted as ESD protection structure has been developed and analyzed trough TCAD simulations. It occupies less space with respect traditional SCR, but has the same advantages. Besides, it presents two different holding voltages: one low during an ESD event and the other high during normal operation condition.
Alternative GGnMOS Triggered SCR ESD Protection Structure in CMOS Technology for the Manufacture of High- Density Integration Circuits
MARINO, FABIO ALESSIO;MENEGHESSO, GAUDENZIO
2008
Abstract
New GGSCR Schottky-contact based to be adopted as ESD protection structure has been developed and analyzed trough TCAD simulations. It occupies less space with respect traditional SCR, but has the same advantages. Besides, it presents two different holding voltages: one low during an ESD event and the other high during normal operation condition.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
