The purpose of this work was to study the influence of different layout parameters on the electrical parameters and Time-To-Latch-Up by means of the injection of substrate current on SCR devices to be used as ESD protection structures for the 65 nm Flash memory technology platform.
Influence of Geometrical Parameters on Time-to-Latch-Up of SCR-Based ESD Protection Structures
TAZZOLI, AUGUSTO;MENEGHESSO, GAUDENZIO
2010
Abstract
The purpose of this work was to study the influence of different layout parameters on the electrical parameters and Time-To-Latch-Up by means of the injection of substrate current on SCR devices to be used as ESD protection structures for the 65 nm Flash memory technology platform.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
